PSMN7R0-30YLCN-channel 30 V 7.1 m logic level MOSFET in LFPAK using NextPower technologyTable 1. Quick reference data continuedSymbol Parameter Conditions Min Typ Max UnitDynamic characteristicsQGD gate-drain charge VGS =4.5V; ID =20A; - 2.5 - nCVDS =15V; see Figure 14; see Figure 15QG(tot) total gate charge VGS =4.5V; ID =20A; - 7.9 - nCVDS =15V; see Figure 14; see Fi

PSMN7R0-30YLN-channel 30 V 7 m logic level MOSFET in LFPAKRev. 04 9 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefits

PSMN7R0-30YLN-channel 30 V 7 m logic level MOSFET in LFPAKRev. 04 9 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefits

PSMN7R0-30MLCN-channel 30 V 7 m logic level MOSFET in LFPAK33 using NextPower TechnologyRev. 4 15 June 2012 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefi