PSMN7R0-60YS. Аналоги и основные параметры
Наименование производителя: PSMN7R0-60YS
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 117 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 89 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0064 Ohm
Тип корпуса: LFPAK
Аналог (замена) для PSMN7R0-60YS
- подборⓘ MOSFET транзистора по параметрам
PSMN7R0-60YS даташит
psmn7r0-60ys.pdf
PSMN7R0-60YS N-channel LFPAK 60 V 6.4 m standard level MOSFET Rev. 02 30 March 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS
psmn7r0-60ys.pdf
PSMN7R0-60YS N-channel LFPAK 60 V 6.4 m standard level MOSFET Rev. 02 30 March 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS
psmn7r0-40ls.pdf
PSMN7R0-40LS N-channel QFN3333 40 V 7.0 m standard level MOSFET Rev. 2 18 August 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 1.2 Features and benefits High effic
psmn7r0-30yl.pdf
PSMN7R0-30YL N-channel 30 V 7 m logic level MOSFET in LFPAK Rev. 04 9 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits
Другие IGBT... PSMN6R5-25YLC, PSMN6R5-80PS, PSMN7R0-100ES, PSMN7R0-100PS, PSMN7R0-100XS, PSMN7R0-30YL, PSMN7R0-30YLC, PSMN7R0-40LS, IRF540N, PSMN7R5-25YLC, PSMN7R6-60PS, PSMN8R0-30YL, PSMN8R0-30YLC, PSMN8R0-40PS, PSMN8R2-80YS, PSMN8R3-40YS, PSMN8R5-60YS
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