PSMN7R0-60YS. Аналоги и основные параметры

Наименование производителя: PSMN7R0-60YS

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 117 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 89 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0064 Ohm

Тип корпуса: LFPAK

Аналог (замена) для PSMN7R0-60YS

- подборⓘ MOSFET транзистора по параметрам

 

PSMN7R0-60YS даташит

 ..1. Size:238K  philips
psmn7r0-60ys.pdfpdf_icon

PSMN7R0-60YS

PSMN7R0-60YS N-channel LFPAK 60 V 6.4 m standard level MOSFET Rev. 02 30 March 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS

 ..2. Size:803K  nxp
psmn7r0-60ys.pdfpdf_icon

PSMN7R0-60YS

PSMN7R0-60YS N-channel LFPAK 60 V 6.4 m standard level MOSFET Rev. 02 30 March 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS

 6.1. Size:375K  philips
psmn7r0-40ls.pdfpdf_icon

PSMN7R0-60YS

PSMN7R0-40LS N-channel QFN3333 40 V 7.0 m standard level MOSFET Rev. 2 18 August 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 1.2 Features and benefits High effic

 6.2. Size:385K  philips
psmn7r0-30yl.pdfpdf_icon

PSMN7R0-60YS

PSMN7R0-30YL N-channel 30 V 7 m logic level MOSFET in LFPAK Rev. 04 9 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits

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