STB120N4LF6 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: STB120N4LF6
Маркировка: 120N4LF6
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 110 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 80 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 80 nC
Выходная емкость (Cd): 750 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.004 Ohm
Тип корпуса: D2PAK
Аналог (замена) для STB120N4LF6
STB120N4LF6 Datasheet (PDF)
stb120n4lf6 std120n4lf6.pdf
STB120N4LF6STD120N4LF6N-channel 40 V, 4 m, 80 A DPAK, D2PAKSTripFET VI DeepGATE Power MOSFETPreliminary dataFeaturesType VDSS RDS(on) max IDSTB120N4LF6 40 V 4.0 m 80 A STD120N4LF6 40 V 4.0 m 80 A3311 Logic level driveDPAKDPAK 100% avalanche testedApplication Switching applications AutomotiveFigure 1. Internal schematic diagram
stb120n4f6 std120n4f6.pdf
STB120N4F6, STD120N4F6Automotive-grade N-channel 40 V, 3.5 m typ., 80 ASTripFET F6 Power MOSFETs in DPAK and DPAK packagesDatasheet - production dataFeaturesOrder codes VDS RDS(on) max. IDSTB120N4F6 40 V 4 m 80 ATABSTD120N4F6 40 V 4 m 80 ATAB Designed for automotive applications and 33AEC-Q101 qualified11 Very low on-resistanceDPAKDPAK
std120n4f6 stp120n4f6 stb120n4f6.pdf
STB120N4F6STD120N4F6, STP120N4F6N-channel 40 V, 4 m , 80 A, DPAK, DPAK, TO-220STripFET VI DeepGATE Power MOSFETFeaturesRDS(on) Type VDSS IDmax.STB120N4F6 40 V 4 m 80 A 3STD120N4F6 40 V 4 m 80 A311STP120N4F6 40 V 4.3 m 80 ADPAKDPAK Standard threshold drive 100% avalanche tested 321TO-220Application Switching applications
stb120nh03l sti120nh03l stp120nh03l.pdf
STB120NH03L - STI120NH03LSTP120NH03LN-channel 30V - 0.005 - 60A - TO-220 / D2PAK / I2PAKSTripFET Power MOSFET for DC-DC conversionGeneral featuresType VDSS RDS(on) IDSTB120NH03L 30V
stb120nf10t4.pdf
STP120NF10, STB120NF10STF120NF10, STW120NF10N-channel 100 V, 0.009 , 110 A STripFET II Power MOSFETin TO-247, TO-220, DPAK, TO-220FPFeaturesType VDSS RDS(on) max IDSTW120NF10 110 A31STP120NF10 110 A100V
stb120n10f4.pdf
STB120N10F4, STP120N10F4N-channel 100 V, 8 m typ., 120 A, STripFET DeepGATE Power MOSFETs in D2PAK and TO-220 packagesDatasheet - production dataFeatures Order codes VDS RDS(on) max. IDTABSTB120N10F4TAB100 V 10 m 120 A STP120N10F4 N-channel enhancement mode33211 Very low on-resistanceD 2PAK TO-220 Low gate charge 100% avalanche rate
stb120nh03l sti120nh03l stp120nh03l.pdf
STB120NH03L - STI120NH03LSTP120NH03LN-channel 30V - 0.005 - 60A - TO-220 / D2PAK / I2PAKSTripFET Power MOSFET for DC-DC conversionGeneral featuresType VDSS RDS(on) IDSTB120NH03L 30V
stb120nf10t4 stp120nf10 stw120nf10.pdf
STB120NF10T4, STP120NF10, STW120NF10 N-channel 100 V, 9.0 m typ., 110 A STripFET II Power MOSFETs in DPAK, TO-220 and TO-247 packages Datasheet - production data TABFeatures Order code V R max. I DS DS(on) DSTB120NF10T4 STP120NF10 100 V 10.5 m 110 A D2PAKTAB STW120NF10 Exceptional dv/dt capability 100% avalanche tested 3 Low gate charge 3
stp120nf10 stb120nf10 stf120nf10 stw120nf10.pdf
STP120NF10, STB120NF10STF120NF10, STW120NF10N-channel 100 V, 0.009 , 110 A STripFET II Power MOSFETin TO-247, TO-220, DPAK, TO-220FPFeaturesType VDSS RDS(on) max IDSTW120NF10 110 A31STP120NF10 110 A100V
stp120nf10 stb120nf10.pdf
STP120NF10, STB120NF10STF120NF10, STW120NF10N-channel 100 V, 0.009 , 110 A STripFET II Power MOSFETin TO-247, TO-220, DPAK, TO-220FPFeaturesType VDSS RDS(on) max IDSTW120NF10 110 A31STP120NF10 110 A100V
stw120nf10 stp120nf10 stb120nf10.pdf
STP120NF10 - STB120NF10STW120NF10N-channel 100V - 0.009 - 110A - TO-247 - TO-220 - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTW120NF10 100V
stb120nf10.pdf
STB120NF10www.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Maximum Junction Temperature0.010 at VGS = 10 V100100 Compliant to RoHS Directive 2002/95/EC0.023 at VGS = 4.5 V85D TO-263G G D S Top ViewS N-Channel MOSFETABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise
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