Справочник MOSFET. STB12NM50N

 

STB12NM50N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: STB12NM50N
   Маркировка: B12NM50N
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 100 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 11 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 30 nC
   trⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 100 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.38 Ohm
   Тип корпуса: D2PAK

 Аналог (замена) для STB12NM50N

 

 

STB12NM50N Datasheet (PDF)

 ..1. Size:586K  st
 stb12nm50n std12nm50n sti12nm50n stf12nm50n stp12nm50n.pdf

STB12NM50N STB12NM50N

STB12NM50N,STD12NM50N,STI12NM50NSTF12NM50N, STP12NM50NN-channel 500 V, 0.29 , 11 A MDmesh II Power MOSFETTO-220 - DPAK - D2PAK - I2PAK - TO-220FPFeaturesVDSS RDS(on) Type ID(@Tjmax) max332211STB12NM50N 550 V 0.38 11 AIPAKTO-220STD12NM50N 550 V 0.38 11 A31STI12NM50N 550 V 0.38 11 ADPAKSTF12NM50N 550 V 0.38 11 A (1)STP12NM50N 5

 0.1. Size:1025K  st
 stb12nm50nd std12nm50nd stf12nm50nd.pdf

STB12NM50N STB12NM50N

STB12NM50NDSTD12NM50ND, STF12NM50NDN-channel 500 V, 0.29 , 11 A, FDmesh II Power MOSFET(with fast diode) in D2PAK, DPAK, TO-220FPFeatures Type VDSS (@Tjmax) RDS(on) max IDSTB12NM50ND 550 V 0.38 11 ASTD12NM50ND 550 V 0.38 11 ASTF12NM50ND 550 V 0.38 11 A33 3211 1 100% avalanche testedD2PAK DPAK TO-220FP Low input capacitance and gate charge

 5.1. Size:478K  st
 stb12nm50fdt4 stp12nm50fd stw14nm50fd.pdf

STB12NM50N STB12NM50N

STB12NM50FD - STB12NM50FD-1STP12NM50FD/FP - STW14NM50FDN-channel 500V - 0.32 - 12A - TO-220/FP - D2/I2PAK - TO-247FDmesh Power MOSFET (with fast diode)General featuresType VDSS RDS(on) ID Pw33STB12NM50FD 500V

 5.2. Size:542K  st
 stp12nm50 stp12nm50fp stb12nm50 stb12nm50-1.pdf

STB12NM50N STB12NM50N

STP12NM50 - STP12NM50FPSTB12NM50 - STB12NM50-1N-channel 550V @ tjmax - 0.30 - 12A TO-220/FP/D2/I2PAK MDmesh Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)33STB12NM50 550V

 5.3. Size:618K  st
 stb12nm50t4 stp12nm50 stp12nm50fp.pdf

STB12NM50N STB12NM50N

STB12NM50T4, STP12NM50, STP12NM50FPDatasheetN-channel 500 V, 300 m typ., 12 A MDmesh Power MOSFETs in a DPAK, TO-220 and TO-220FP packagesFeaturesTABVDS RDS(on) max. IDOrder codes312D PAK3STB12NM50T421TO-220FPTAB STP12NM50 500 V 350 m 12 ASTP12NM50FP32 100% avalanche tested1TO-220 Low input capacitance and gate charge Low gate inp

 5.4. Size:541K  st
 stb12nm50t4 stp12nm50fp.pdf

STB12NM50N STB12NM50N

STP12NM50 - STP12NM50FPSTB12NM50 - STB12NM50-1N-channel 550V @ tjmax - 0.30 - 12A TO-220/FP/D2/I2PAK MDmesh Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)33STB12NM50 550V

 5.5. Size:535K  st
 stb12nm50-1.pdf

STB12NM50N STB12NM50N

STP12NM50 - STP12NM50FPSTB12NM50 - STB12NM50-1N-channel 550V @ tjmax - 0.30 - 12A TO-220/FP/D2/I2PAK MDmesh Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)33STB12NM50 550V

 5.6. Size:483K  st
 stb12nm50fd stp12nm50fd-fp stw14nm50fd.pdf

STB12NM50N STB12NM50N

STB12NM50FD - STB12NM50FD-1STP12NM50FD/FP - STW14NM50FDN-channel 500V - 0.32 - 12A - TO-220/FP - D2/I2PAK - TO-247FDmesh Power MOSFET (with fast diode)General featuresType VDSS RDS(on) ID Pw33STB12NM50FD 500V

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