Справочник MOSFET. APT1003R5BN

 

APT1003R5BN Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: APT1003R5BN
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 180 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1000 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 3.5 Ohm
   Тип корпуса: TO247
     - подбор MOSFET транзистора по параметрам

 

APT1003R5BN Datasheet (PDF)

 6.1. Size:100K  apt
apt1003rbfllg apt1003rsfllg.pdfpdf_icon

APT1003R5BN

APT1003RBFLLAPT1003RSFLL1000V 4A 3.00R POWER MOS 7 FREDFETD3PAKTO-247Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with

 6.2. Size:99K  apt
apt1003rbllg apt1003rsllg.pdfpdf_icon

APT1003R5BN

APT1003RBLLAPT1003RSLL1000V 4A 3.00R POWER MOS 7 MOSFETD3PAKTO-247Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with exc

 6.3. Size:94K  apt
apt1003rkfllg.pdfpdf_icon

APT1003R5BN

APT1003RKFLL1000V 4A 3.00R POWER MOS 7 FREDFETTO-220Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesGDSalong with exceptionall

 6.4. Size:92K  apt
apt1003rkll.pdfpdf_icon

APT1003R5BN

APT1003RKLL1000V 4A 3.00R POWER MOS 7 MOSFETTO-220Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)Gand Qg. Power MOS 7 combines lower conduction and switching lossesDSalong with exceptionally

Другие MOSFET... APT10026JN , APT1002R4AN , APT1002R4BN , APT1002R4CN , APT1002RAN , APT1002RBN , APT1002RCN , APT1003R5AN , 4N60 , APT1003R5CN , APT1003R5GN , APT10043JVR , APT1004R2AN , APT1004R2BN , APT1004R2CN , APT1004R2GN , APT1004RAN .

History: SIB452DK | MMFT2955ET1 | STP5NB40 | DH300N08F | SVF12N60K | IPA083N10N5 | 2SK3532

 

 
Back to Top

 


 
.