APT1003R5BN - описание и поиск аналогов

 

APT1003R5BN - Аналоги. Основные параметры


   Наименование производителя: APT1003R5BN
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 180 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1000 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 3.5 Ohm
   Тип корпуса: TO247
 

 Аналог (замена) для APT1003R5BN

   - подбор ⓘ MOSFET транзистора по параметрам

 

APT1003R5BN технические параметры

 6.1. Size:100K  apt
 apt1003rbfllg apt1003rsfllg.pdf pdf_icon

APT1003R5BN

APT1003RBFLL APT1003RSFLL 1000V 4A 3.00 R POWER MOS 7 FREDFET D3PAK TO-247 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with

 6.2. Size:99K  apt
 apt1003rbllg apt1003rsllg.pdf pdf_icon

APT1003R5BN

APT1003RBLL APT1003RSLL 1000V 4A 3.00 R POWER MOS 7 MOSFET D3PAK TO-247 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with exc

 6.3. Size:94K  apt
 apt1003rkfllg.pdf pdf_icon

APT1003R5BN

APT1003RKFLL 1000V 4A 3.00 R POWER MOS 7 FREDFET TO-220 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses G D S along with exceptionall

 6.4. Size:92K  apt
 apt1003rkll.pdf pdf_icon

APT1003R5BN

APT1003RKLL 1000V 4A 3.00 R POWER MOS 7 MOSFET TO-220 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) G and Qg. Power MOS 7 combines lower conduction and switching losses D S along with exceptionally

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... APT10026JN , APT1002R4AN , APT1002R4BN , APT1002R4CN , APT1002RAN , APT1002RBN , APT1002RCN , APT1003R5AN , 5N65 , APT1003R5CN , APT1003R5GN , APT10043JVR , APT1004R2AN , APT1004R2BN , APT1004R2CN , APT1004R2GN , APT1004RAN .

History: DHS020N88 | DHS021N04

 

 
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