Справочник MOSFET. STB185N55F3

 

STB185N55F3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: STB185N55F3
   Маркировка: 185N55F3
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 330 W
   Предельно допустимое напряжение сток-исток |Uds|: 55 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 120 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 100 nC
   Время нарастания (tr): 150 ns
   Выходная емкость (Cd): 1450 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0035 Ohm
   Тип корпуса: D2PAK

 Аналог (замена) для STB185N55F3

 

 

STB185N55F3 Datasheet (PDF)

 ..1. Size:338K  st
stb185n55f3 stp185n55f3.pdf

STB185N55F3
STB185N55F3

STB185N55F3STP185N55F3N-channel 55V - 3.2m - 120A - D2PAK/TO-220STripFET Power MOSFETFeaturesType VDSS RDS(on) ID PwSTB185N55F3 55V 3.5m 120A(1) 330WSTP185N55F3 55V 3.8m 120A(1) 330W1. Value limited by wire bonding 33 Ultra low on-resistance121 100% avalanche testedTO-220 D2PAKDescriptionThis n-channel enhancement mode Power MOSFET is the

 9.1. Size:1107K  st
stb18nf25 std18nf25.pdf

STB185N55F3
STB185N55F3

STB18NF25STD18NF25N-channel 250 V, 0.14 , 17 A DPAK, D2PAKlow gate charge STripFET II Power MOSFETFeaturesRDS(on) Type VDSS ID PTOTmaxSTB18NF25 250 V

 9.2. Size:963K  st
stb18nm80 stf18nm80 stw18nm80 stp18nm80.pdf

STB185N55F3
STB185N55F3

STB18NM80, STF18NM80STP18NM80, STW18NM80N-channel 800 V, 0.25 , 17 A, MDmesh Power MOSFETD2PAK, TO-220FP, TO-220, TO-247FeaturesVDSS RDS(on) Type ID(@Tjmax) max33 22 1STB18NM80 800 V

 9.3. Size:1015K  st
stb18n65m5 std18n65m5.pdf

STB185N55F3
STB185N55F3

STB18N65M5, STD18N65M5N-channel 650 V, 0.198 typ., 15 A MDmesh V Power MOSFET in DPAK and DPAK packagesDatasheet production dataFeaturesVDSS @ RDS(on) Order codes IDTABTJmax maxTABSTB18N65M5710 V

 9.4. Size:1200K  st
stb18n60m2 stp18n60m2 stw18n60m2.pdf

STB185N55F3
STB185N55F3

STB18N60M2, STP18N60M2, STW18N60M2N-channel 600 V, 0.255 typ., 13 A MDmesh II Plus low Qg Power MOSFET in D2PAK, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABVDS @ RDS(on) 3 Order codes ID1 TJmax max2D PAKSTB18N60M2STP18N60M2 650 V 0.28 13 ATABSTW18N60M2 Extremely low gate charge3 3 Lower RDS(on) x area vs previous generation

 9.5. Size:1048K  st
stb18nm80 stf18nm80 stp18nm80 stw18nm80.pdf

STB185N55F3
STB185N55F3

STB18NM80, STF18NM80, STP18NM80, STW18NM80N-channel 800 V, 0.25 , 17 A, MDmesh Power MOSFET in DPAK, TO-220FP, TO-220 and TO-247 packagesDatasheet production dataFeaturesRDS(on) Order codes VDSS max ID3321STB18NM80 800 V

 9.6. Size:448K  st
stb180n55f3 stp180n55f3.pdf

STB185N55F3
STB185N55F3

STB180N55F3STP180N55F3N-channel 55V - 3.2m - 120A - D2PAK/TO-220STripFET Power MOSFETFeaturesType VDSS RDS(on) ID PwSTB180N55F3 55V 3.5m 120A(1) 330WSTP180N55F3 55V 3.8m 120A(1) 330W1. Value limited by wire bonding 33121 Ultra low on-resistance 100% avalanche tested TO-220 D2PAKDescriptionThis n-channel enhancement mode Power MOSFET is the l

 9.7. Size:126K  st
stb18n20.pdf

STB185N55F3
STB185N55F3

STB18N20N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTB18N20 200 V

 9.8. Size:1417K  st
stb18nm60nd stf18nm60nd stp18nm60nd stw18nm60nd.pdf

STB185N55F3
STB185N55F3

STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60NDN-channel 600 V - 0.25 typ., 13 A FDmesh II Power MOSFET (with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABVDSS @ RDS(on) IDOrder codes3TJmaxmax132STB18NM60NDD2PAK 1TO-220FPSTF18NM60ND650 V

 9.9. Size:995K  st
stb18nm60n stf18nm60n sti18nm60n stp18nm60n stw18nm60n.pdf

STB185N55F3
STB185N55F3

STB18NM60N, STF18NM60N, STI18NM60NSTP18NM60N, STW18NM60NN-channel 600 V, 0.27 , 13 A MDmesh II Power MOSFETin TO-220, TO-220FP, TO-247, DPAK and IPAKFeaturesVDSS RDS(on) Order codes ID PW(@Tjmax) max.3312STB18NM60N 110 W 1DPAKSTF18NM60N 30 WTO-24732STI18NM60N 650 V

 9.10. Size:1247K  st
stb18n55m5 std18n55m5 stf18n55m5 stp18n55m5.pdf

STB185N55F3
STB185N55F3

STB18N55M5, STD18N55M5STF18N55M5, STP18N55M5N-channel 550 V, 0.18 , 13 A, MDmesh V Power MOSFETin DPAK, DPAK, TO-220FP and TO-220FeaturesVDSS RDS(on) Order codes ID3@TJmax max131STB18N55M5DPAKDPAKSTD18N55M5550 V

 9.11. Size:887K  st
stb18nf30.pdf

STB185N55F3
STB185N55F3

STB18NF30N-channel 330 V, 160 m, 18 A STripFET II Power MOSFET in DPAK packageDatasheet production dataFeaturesRDS(on) Order code VDSS IDmax.STB18NF30 330 V 180 m 18 A TAB 100% avalanche tested 175 C junction temperature31ApplicationsDPAK Switching applications AutomotiveDescriptionThis Power MOSFET has been developed using Figu

 9.12. Size:1158K  st
stb18nm60n stf18nm60n stp18nm60n stw18nm60n.pdf

STB185N55F3
STB185N55F3

STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60NN-channel 600 V, 0.26 typ., 13 A MDmesh II Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247Datasheet production dataFeaturesTABVDSS RDS(on) Order codes ID PTOT(@Tjmax) max.3132STB18NM60N 110 W1DPAKSTF18NM60N 30 WTO-220FP650 V

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History: FDB035N10A

 

 
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