APT1003R5GN - аналоги и даташиты транзистора

 

APT1003R5GN - Даташиты. Аналоги. Основные параметры


   Наименование производителя: APT1003R5GN
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1000 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 3 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 3.5 Ohm
   Тип корпуса: TO220
 
   - подбор ⓘ MOSFET транзистора по параметрам

 

APT1003R5GN Datasheet (PDF)

 6.1. Size:100K  apt
 apt1003rbfllg apt1003rsfllg.pdf pdf_icon

APT1003R5GN

APT1003RBFLLAPT1003RSFLL1000V 4A 3.00R POWER MOS 7 FREDFETD3PAKTO-247Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with

 6.2. Size:99K  apt
 apt1003rbllg apt1003rsllg.pdf pdf_icon

APT1003R5GN

APT1003RBLLAPT1003RSLL1000V 4A 3.00R POWER MOS 7 MOSFETD3PAKTO-247Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with exc

 6.3. Size:94K  apt
 apt1003rkfllg.pdf pdf_icon

APT1003R5GN

APT1003RKFLL1000V 4A 3.00R POWER MOS 7 FREDFETTO-220Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesGDSalong with exceptionall

 6.4. Size:92K  apt
 apt1003rkll.pdf pdf_icon

APT1003R5GN

APT1003RKLL1000V 4A 3.00R POWER MOS 7 MOSFETTO-220Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)Gand Qg. Power MOS 7 combines lower conduction and switching lossesDSalong with exceptionally

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... APT1002R4BN , APT1002R4CN , APT1002RAN , APT1002RBN , APT1002RCN , APT1003R5AN , APT1003R5BN , APT1003R5CN , AON7506 , APT10043JVR , APT1004R2AN , APT1004R2BN , APT1004R2CN , APT1004R2GN , APT1004RAN , APT1004RBN , APT1004RCN .

History: PHB50N06LT | 2SK3847B

 

 
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