APT1003R5GN. Аналоги и основные параметры

Наименование производителя: APT1003R5GN

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 125 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 1000 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 3 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 3.5 Ohm

Тип корпуса: TO220

Аналог (замена) для APT1003R5GN

- подборⓘ MOSFET транзистора по параметрам

 

APT1003R5GN даташит

 6.1. Size:100K  apt
 apt1003rbfllg apt1003rsfllg.pdf pdf_icon

APT1003R5GN

APT1003RBFLL APT1003RSFLL 1000V 4A 3.00 R POWER MOS 7 FREDFET D3PAK TO-247 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with

 6.2. Size:99K  apt
 apt1003rbllg apt1003rsllg.pdf pdf_icon

APT1003R5GN

APT1003RBLL APT1003RSLL 1000V 4A 3.00 R POWER MOS 7 MOSFET D3PAK TO-247 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with exc

 6.3. Size:94K  apt
 apt1003rkfllg.pdf pdf_icon

APT1003R5GN

APT1003RKFLL 1000V 4A 3.00 R POWER MOS 7 FREDFET TO-220 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses G D S along with exceptionall

 6.4. Size:92K  apt
 apt1003rkll.pdf pdf_icon

APT1003R5GN

APT1003RKLL 1000V 4A 3.00 R POWER MOS 7 MOSFET TO-220 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) G and Qg. Power MOS 7 combines lower conduction and switching losses D S along with exceptionally

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... APT1002R4BN, APT1002R4CN, APT1002RAN, APT1002RBN, APT1002RCN, APT1003R5AN, APT1003R5BN, APT1003R5CN, IRFB3607, APT10043JVR, APT1004R2AN, APT1004R2BN, APT1004R2CN, APT1004R2GN, APT1004RAN, APT1004RBN, APT1004RCN