APT10043JVR - описание и поиск аналогов

 ..1. Size:73K  apt
 apt10043jvr.pdf 

APT10043JVR 1000V 22A 0.430 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche

 6.1. Size:73K  apt
 apt10043.pdf 

APT10043JVR 1000V 22A 0.430 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche

 7.1. Size:39K  apt
 apt10040b2vfr.pdf 

APT10040B2VFR APT10040LVFR 1000V 25A 0.400W B2VFR POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVFR Identical

 7.2. Size:90K  apt
 apt10045b2llg apt10045lllg.pdf 

APT10045B2LL APT10045LLL 1000V 23A 0.450 R B2LL POWER MOS 7 MOSFET T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses al

 7.3. Size:50K  apt
 apt1004.pdf 

D TO-254 G APT1004RCN 1000V 3.6A 4.00 S TM POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT1004RCN UNIT VDSS Drain-Source Voltage 1000 Volts ID Continuous Drain Current @ TC = 25 C 3.6 Amps IDM Pulsed Drain Current 1 14.4 VGS Gate-Source Voltage 30 Volts Total Po

 7.4. Size:50K  apt
 apt1004rgn.pdf 

D TO-257 G APT1004RGN 1000V 3.3A 4.00 S TM POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT1004RGN UNIT VDSS Drain-Source Voltage 1000 Volts ID Continuous Drain Current @ TC = 25 C 3.3 Amps IDM Pulsed Drain Current 1 13.2 VGS Gate-Source Voltage 30 Volts Total Po

 7.5. Size:68K  apt
 apt10045b2ll.pdf 

APT10045B2LL APT10045LLL 1000V 23A 0.450W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast

 7.6. Size:209K  apt
 apt10045b2fllg apt10045lfllg.pdf 

APT10045B2FLL APT10045LFLL 1000V 23A 0.4 R B2FLL POWER MOS 7 FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching l

 7.7. Size:76K  apt
 apt1004rbnr.pdf 

 7.8. Size:37K  apt
 apt10040b2vr.pdf 

APT10040B2VR APT10040LVR 1000V 25A 0.400W B2VR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR Identical Specificati

 7.9. Size:76K  apt
 apt10040b2vfrg apt10040lvfrg.pdf 

APT10040B2VFR APT10040LVFR 1000V 25A 0.400W B2VFR FREDFET POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVFR Identica

 7.10. Size:50K  apt
 apt1004rcn.pdf 

D TO-254 G APT1004RCN 1000V 3.6A 4.00 S TM POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT1004RCN UNIT VDSS Drain-Source Voltage 1000 Volts ID Continuous Drain Current @ TC = 25 C 3.6 Amps IDM Pulsed Drain Current 1 14.4 VGS Gate-Source Voltage 30 Volts Total Po

 7.11. Size:69K  apt
 apt10045jll.pdf 

APT10045JLL 1000V 21A 0.450W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's

 7.12. Size:51K  apt
 apt1004r2bn.pdf 

D TO-247 G APT1004RBN 1000V 4.4A 4.00 S APT1004R2BN 1000V 4.0A 4.20 POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT APT Symbol Parameter 1004RBN 1004R2BN UNIT VDSS Drain-Source Voltage 1000 1000 Volts ID Continuous Drain Current @ TC = 25 C 4.4 4.0 Amps IDM Pulsed Drain Current 1

 7.13. Size:71K  apt
 apt10045jfll.pdf 

APT10045JFLL 1000V 21A 0.450W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent wi

 7.14. Size:63K  apt
 apt10045b2fll.pdf 

APT10045B2FLL APT10045LFLL 1000V 23A 0.450W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with excepti

 7.15. Size:75K  apt
 apt10040lvr.pdf 

APT10040B2VR APT10040LVR 1000V 25A 0.400W B2VR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR Identical Specificati

 7.16. Size:51K  apt
 apt1004r2kn.pdf 

D TO-220 G APT1004RKN 1000V 3.6A 4.00 S APT1004R2KN 1000V 3.5A 4.20 POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT1004R2KN APT1004RKN UNIT VDSS Drain-Source Voltage 1000 1000 Volts ID Continuous Drain Current 3.5 3.6 Amps 1 IDM Pulsed Drain Current 14.0 14.4 Amps

 7.17. Size:55K  apt
 apt1004rkn.pdf 

D TO-220 G APT1004RKN 1000V 3.6A 4.00 S APT1004R2KN 1000V 3.5A 4.20 POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT1004R2KN APT1004RKN UNIT VDSS Drain-Source Voltage 1000 1000 Volts ID Continuous Drain Current 3.5 3.6 Amps 1 IDM Pulsed Drain Current 14.0 14.4 Amps V