STD18NF25 - описание и поиск аналогов

STB18NF25 STD18NF25 N-channel 250 V, 0.14 , 17 A DPAK, D2PAK low gate charge STripFET II Power MOSFET Features RDS(on) Type VDSS ID PTOT max STB18NF25 250 V

STD18NF03L N-channel 30V - 0.038 - 17A - DPAK STripFET II Power MOSFET Features Type VDSS RDS(on) ID STD18NF03L 30V

STD18N55M5, STP18N55M5 Datasheet N-channel 550 V, 0.150 typ., 16 A MDmesh M5 Power MOSFETs in a DPAK and TO-220 packages Features VDS @ TAB RDS(on)max. Order code Package TAB Tjmax. 3 2 STD18N55M5 DPAK 1 600 V 0.192 3 2 STP18N55M5 TO-220 DPAK TO-220 1 Extremely low RDS(on) Low gate charge and input capacitance Excellent switching performance D(2, TA

STB18N65M5, STD18N65M5 N-channel 650 V, 0.198 typ., 15 A MDmesh V Power MOSFET in D PAK and DPAK packages Datasheet production data Features VDSS @ RDS(on) Order codes ID TAB TJmax max TAB STB18N65M5 710 V

STB18N55M5, STD18N55M5 STF18N55M5, STP18N55M5 N-channel 550 V, 0.18 , 13 A, MDmesh V Power MOSFET in D PAK, DPAK, TO-220FP and TO-220 Features VDSS RDS(on) Order codes ID 3 @TJmax max 1 3 1 STB18N55M5 DPAK D PAK STD18N55M5 550 V

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STD18N65M5 FEATURES Higher V rating DSS Excellent switching performance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS

Isc N-Channel MOSFET Transistor STD18N55M5 FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol