STD6NF10
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: STD6NF10
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 30
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 6
A
Tjⓘ - Максимальная температура канала: 175
°C
Qgⓘ -
Общий заряд затвора: 10
nC
trⓘ -
Время нарастания: 10
ns
Cossⓘ - Выходная емкость: 45
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.25
Ohm
Тип корпуса:
DPAK
Аналог (замена) для STD6NF10
STD6NF10
Datasheet (PDF)
..1. Size:327K st
std6nf10 stu6nf10.pdf 
STD6NF10STU6NF10N-channel 100 V, 0.22 , 6 A, DPAK, IPAKlow gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) max IDSTD6NF10 100 V
..2. Size:266K st
std6nf10.pdf 
STD6NF10N-CHANNEL 100V - 0.22 - 6A IPAK/DPAKLOW GATE CHARGE STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTD6NF10 100 V
0.1. Size:325K st
std6nf10t4.pdf 
STD6NF10STU6NF10N-channel 100 V, 0.22 , 6 A, DPAK, IPAKlow gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) max IDSTD6NF10 100 V
9.2. Size:500K st
std6n95k5 stp6n95k5 stu6n95k5 stw6n95k5.pdf 
STD6N95K5, STP6N95K5 STU6N95K5, STW6N95K5DatasheetN-channel 950 V, 1 typ., 9 A MDmesh K5 Power MOSFETs in DPAK, TO-220, IPAK and TO-247 packagesFeaturesTABTABOrder codes VDS RDS(on) max. ID PTOT31DPAK STD6N95K53TO-220 STP6N95K521 950 V 1.25 9 A 90 WTABSTU6N95K5STW6N95K5 DPAK 950 V worldwide best RDS(on)32IPAK13 Worldwide best FOM
9.4. Size:881K st
stb6n65m2 std6n65m2.pdf 
STB6N65M2, STD6N65M2N-channel 650 V, 1.2 typ., 4 A MDmesh M2 Power MOSFETs in D2PAK and DPAK packagesDatasheet - preliminary dataFeaturesOrder codes VDS RDS(on) max IDSTB6N65M2650 V 1.35 4 ATAB TABSTD6N65M2313 Extremely low gate charge1DPAK2D PAK Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protectedApp
9.5. Size:399K st
std6nk50zt4 stf6nk50z.pdf 
STP6NK50Z - STF6NK50ZSTD6NK50ZN-CHANNEL 500V - 0.93 - 5.6A TO-220/TO-220FP/DPAKZener-Protected SuperMESH MOSFETTYPE VDSS RDS(on) ID PwSTP6NK50Z 500 V
9.6. Size:1156K st
stb6n60m2 std6n60m2.pdf 
STB6N60M2, STD6N60M2N-channel 600 V, 1.06 typ., 4.5 A MDmesh II Plus low Qg Power MOSFET in D2PAK and DPAK packagesDatasheet - production dataFeaturesVDS @ RDS(on) Order codes IDTJmax maxTAB TABSTB6N60M2650 V 1.2 4.5 A3STD6N60M2131DPAK2 Extremely low gate chargeD PAK Lower RDS(on) x area vs previous generation Low gate input resistanc
9.7. Size:344K st
std6n10.pdf 
STD6N10N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTD6N10 100 V
9.8. Size:427K st
std6n62k3 stf6n62k3 stp6n62k3 stu6n62k3.pdf 
STD6N62K3 - STF6N62K3STP6N62K3 - STU6N62K3N-channel 620 V, 1.1 , 5.5 A, IPAK, DPAK, TO-220,TO-220FPSuperMESH3 Power MOSFETFeatures3RDS(on) 3Type VDSS ID Pw2 1max1DPAKSTD6N62K3 620 V
9.9. Size:1258K st
std6n95k5 stp6n95k5 stw6n95k5 stu6n95k5.pdf 
STD6N95K5, STP6N95K5, STW6N95K5, STU6N95K5N-channel 950 V, 1 typ., 9 A Zener-protected SuperMESH 5 Power MOSFETs in DPAK, TO-220, TO-247 and IPAK packagesDatasheet - production dataFeatures TABTAB3 Order codes VDS RDS(on) max. ID PTOT13DPAK STD6N95K521STP6N95K5TO-220950 V 1.25 9 A 90 W STW6N95K5TABSTU6N95K53 DPAK 950 V worldwide best RDS(on)
9.10. Size:685K st
stb6nm60n std6nm60n stf6nm60n stp6nm60n.pdf 
STx6NM60NN-channel 600 V, 0.85 , 4.6 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) Type ID(@Tjmax) max33STB6NM60N 650 V
9.11. Size:1146K st
sti6n62k3 stp6n62k3 stu6n62k3 stf6n62k3 std6n62k3.pdf 
STD6N62K3, STF6N62K3STI6N62K3, STP6N62K3, STU6N62K3N-channel 620 V, 0.95 , 5.5 A SuperMESH3 Power MOSFETin IPAK, DPAK, TO-220,TO-220FP, IPAKFeaturesRDS(on) 3Order codes VDSS ID Pw2max.1321IPAKSTD6N62K3 90 WIPAKSTF6N62K3 30 W3STI6N62K3 620 V
9.12. Size:272K st
std6nc40.pdf 
STD6NC40N-CHANNEL 400V - 0.75 - 5A - DPAK / IPAKPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTD6NC40 400V
9.13. Size:1153K st
stb6n52k3 std6n52k3 stf6n52k3 stp6n52k3.pdf 
STB6N52K3, STD6N52K3STF6N52K3, STP6N52K3N-channel 525 V, 1 , 5 A, DPAK, DPAK, TO-220FP, TO-220SuperMESH3 Power MOSFETFeaturesRDS(on) 3Order codes VDSS ID Pwmax132STB6N52K3 5 A 70 WDPAK1STD6N52K3 5 A(1) 25 WTO-220FP525 V
9.14. Size:399K st
stp6nk50z stf6nk50z std6nk50z.pdf 
STP6NK50Z - STF6NK50ZSTD6NK50ZN-CHANNEL 500V - 0.93 - 5.6A TO-220/TO-220FP/DPAKZener-Protected SuperMESH MOSFETTYPE VDSS RDS(on) ID PwSTP6NK50Z 500 V
9.15. Size:1285K st
stb6n80k5 std6n80k5 sti6n80k5 stp6n80k5.pdf 
STB6N80K5, STD6N80K5,STI6N80K5, STP6N80K5N-channel 800 V, 1.3 typ., 4.5 A MDmesh K5Power MOSFETs in DPAK, DPAK, IPAK and TO-220 packagesDatasheet - production dataFeaturesTABTABOrder codes VDS RDS(on)max ID PTOT3131STB6N80K5DPAKD2PAKSTD6N80K5TAB TAB800 V 1.6 4.5 A 85 WSTI6N80K5STP6N80K5323211 Industrys lowest RDS(on)TO-
9.16. Size:420K st
std6n62k3.pdf 
STD6N62K3DatasheetN-channel 620 V, 0.95 typ., 5.5 A MDmesh K3 Power MOSFET in DPAK packageFeaturesOrder codes VDS RDS(on) max. ID PTOTTABSTD6N62K3 620 V 1.2 5.5 A 90 W 100% avalanche tested32 Extremely high dv/dt capability1 Very low intrinsic capacitance Improved diode reverse recovery characteristicsDPAK Zener-protectedD(2, TAB)Appli
9.17. Size:262K inchange semiconductor
std6n95k5.pdf 
Isc N-Channel MOSFET Transistor STD6N95K5FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME
Другие MOSFET... STD60NF55LA
, STD65N3LLH5
, STD65N55F3
, STD65N55LF3
, STD65NF06
, STD6N52K3
, STD6N62K3
, STD6N95K5
, AON7403
, STD6NK50Z
, STD70N10F4
, STD70N2LH5
, STD70N6F3
, STD70NS04ZL
, STD75N3LLH6
, STD7N52DK3
, STD7N52K3
.
