STB70N10F4, STD70N10F4STP70N10F4, STW70N10F4N-channel 100 V, 0.015 , 60 A, STripFET DeepGATEPower MOSFET in TO-220, DPAK, TO-247, D2PAKFeaturesType VDSS RDS(on) max IDSTB70N10F4 100 V

STD70NH02LSTD70NH02L-1N-channel 24V - 0.0062 - 60A - DPAK/IPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD70NH02L-1 24V

STD70N02LSTD70N02L-1N-channel 25V - 0.0068 - 60A - DPAK - IPAKSTripFET III Power MOSFETFeaturesType VDSS RDS(on) IDSTD70N02L 25V

STD70N03LSTD70N03L-1N-channel 30V - 0.0059 - 70A - DPAK / IPAKSTripFET III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD70N03L 30V

STD70NS04ZLN-channel clamped 9.5 m, 70 A DPAKfully protected SAFeFET Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTD70NS04ZL Clamped

STD70NH02LSTD70NH02L-1N-channel 24V - 0.0062 - 60A - DPAK/IPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD70NH02L-1 24V

STD70N6F3N-channel 60 V, 8.0 m, 70 A DPAKSTripFET III Power MOSFETPreliminary dataFeaturesType VDSS RDS(on) ID PwSTD70N6F3 60 V

STD70N02LSTD70N02L-1N-channel 25V - 0.0068 - 60A - DPAK - IPAKSTripFET III Power MOSFETFeaturesType VDSS RDS(on) IDSTD70N02L 25V

STD70N2LH5STU70N2LH5N-channel 25 V, 0.006 , 48 A - DPAK - IPAKSTripFET V Power MOSFETPreliminary DataFeaturesType VDSS RDS(on) max IDSTD70N2LH5 25 V 0.0071 48 A STU70N2LH5 25 V 0.0075 48 A332 RDS(on) * Qg industry benchmark11 Extremely low on-resistance RDS(on)DPAKIPAK Very low switching gate charge High avalanche ruggedness L

STD70N6F3www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 50 Material categorization:600.013 at VGS = 4.5 V 45DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit