STD9NM50N - Даташиты. Аналоги. Основные параметры

STD9NM50N N-channel 500 V, 0.73 , 5 A MDmesh II Power MOSFET in DPAK Features Order code VDSS@TJMAX RDS(on)max. ID STD9NM50N 550 V

STD9NM50N - STD9NM50N-1 STF9NM50N - STP9NM50N N-channel 500V - 0.47 - 7.5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh Power MOSFET Features VDSS Type RDS(on) ID (@Tjmax) 3 2 3 STD9NM50N 550V

STD9NM60N STF9NM60N, STP9NM60N N-channel 600 V, 0.63 , 6.5 A TO-220, TO-220FP, DPAK MDmesh II Power MOSFET Features VDSS RDS(on) Order codes ID (@Tjmax) max. 3 3 2 2 1 STD9NM60N 1 TO-220FP TO-220 STF9NM60N 650 V

STD9N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD9N10 100 V

STD9N10L N - CHANNEL 100V - 0.22 - 9A IPAK/DPAK POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STD9N10L 100 V

STD9N60M2, STP9N60M2, STU9N60M2 N-channel 600 V, 0.72 typ., 5.5 A MDmesh II Plus low Qg Power MOSFET in DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB VDS @ RDS(on) Order codes ID 3 TJmax max 1 DPAK STD9N60M2 STP9N60M2 650 V 0.78 5.5 A TAB STU9N60M2 TAB Extremely low gate charge 3 3 Lower RDS(on) x area vs previous generation 2 2

STD9N40M2 N-channel 400 V, 0.59 typ., 6 A MDmesh II Plus low Qg Power MOSFET in a DPAK package Datasheet - preliminary data Features Order code VDS @ TJmax RDS(on) max ID STD9N40M2 450 V 0.8 6 A TAB Extremely low gate charge 3 Lower RDS(on) x area vs previous generation 1 Low gate input resistance DPAK 100% avalanche tested Zener-protected Applica

STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2 N-channel 650 V, 0.79 typ., 5 A MDmesh M2 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB RDS(on) Order codes VDS max ID 3 1 DPAK STD9N65M2 3 2 1 STF9N65M2 650 V 0.9 5 A STP9N65M2 TO-220FP TAB STU9N65M2 TAB Extremely low gate charge 3 2 Excellent output capacit