Справочник MOSFET. STF12N50U

 

STF12N50U MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: STF12N50U
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 30 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 17 ns
   Cossⓘ - Выходная емкость: 159 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.8 Ohm
   Тип корпуса: TO220FP

 Аналог (замена) для STF12N50U

 

 

STF12N50U Datasheet (PDF)

 ..1. Size:566K  st
stf12n50u.pdf

STF12N50U
STF12N50U

STF12N50UN-channel 500 V, 0.55 , 10 A TO-220FPUltrafast MESH Power MOSFETFeaturesRDS(on) Type VDSS ID PwmaxSTF12N50U 500 V

 6.1. Size:660K  st
stf12n50m2.pdf

STF12N50U
STF12N50U

STF12N50M2N-channel 500 V, 0.325 typ.,10 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP packageDatasheet - preliminary dataFeaturesOrder code VDS RDS(on) max IDSTF12N50M2 500 V 0.38 10 A Extremely low gate charge Lower RDS(on) x area vs previous generation32 Low gate input resistance1 100% avalanche testedTO-220FP Zener-protectedAppli

 8.1. Size:581K  st
std12nm50n stf12nm50n sti12nm50n stp12nm50n.pdf

STF12N50U
STF12N50U

STB12NM50N,STD12NM50N,STI12NM50NSTF12NM50N, STP12NM50NN-channel 500 V, 0.29 , 11 A MDmesh II Power MOSFETTO-220 - DPAK - D2PAK - I2PAK - TO-220FPFeaturesVDSS RDS(on) Type ID(@Tjmax) max332211STB12NM50N 550 V 0.38 11 AIPAKTO-220STD12NM50N 550 V 0.38 11 A31STI12NM50N 550 V 0.38 11 ADPAKSTF12NM50N 550 V 0.38 11 A (1)STP12NM50N 5

 8.2. Size:407K  st
stf12n120k5 stfw12n120k5.pdf

STF12N50U
STF12N50U

STF12N120K5, STFW12N120K5N-channel 1200 V, 0.62 typ., 12 A MDmesh K5 Power MOSFETs in TO-220FP and TO-3PF packagesDatasheet - production dataFeatures Order code VDS RDS(on) max. ID PTOTSTF12N120K5 40 W 1200 V 0.69 12 A STFW12N120K5 63 W111 Industrys lowest RDS(on) x area3321 2 Industrys best figure of merit (FoM) 1TO-220FP Ultra

 8.3. Size:586K  st
stb12nm50n std12nm50n sti12nm50n stf12nm50n stp12nm50n.pdf

STF12N50U
STF12N50U

STB12NM50N,STD12NM50N,STI12NM50NSTF12NM50N, STP12NM50NN-channel 500 V, 0.29 , 11 A MDmesh II Power MOSFETTO-220 - DPAK - D2PAK - I2PAK - TO-220FPFeaturesVDSS RDS(on) Type ID(@Tjmax) max332211STB12NM50N 550 V 0.38 11 AIPAKTO-220STD12NM50N 550 V 0.38 11 A31STI12NM50N 550 V 0.38 11 ADPAKSTF12NM50N 550 V 0.38 11 A (1)STP12NM50N 5

 8.4. Size:1025K  st
stb12nm50nd std12nm50nd stf12nm50nd.pdf

STF12N50U
STF12N50U

STB12NM50NDSTD12NM50ND, STF12NM50NDN-channel 500 V, 0.29 , 11 A, FDmesh II Power MOSFET(with fast diode) in D2PAK, DPAK, TO-220FPFeatures Type VDSS (@Tjmax) RDS(on) max IDSTB12NM50ND 550 V 0.38 11 ASTD12NM50ND 550 V 0.38 11 ASTF12NM50ND 550 V 0.38 11 A33 3211 1 100% avalanche testedD2PAK DPAK TO-220FP Low input capacitance and gate charge

 8.5. Size:690K  st
stb12nk80zt4 stf12nk80z.pdf

STF12N50U
STF12N50U

STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80ZN-channel 800 V, 0.65 typ., 10.5 A Zener-protected SuperMESHPower MOSFET in D2PAK, TO-220FP, TO-220 and TO-247Datasheet production dataFeaturesTABVDSS Type RDS(on) ID PW(@Tjmax)313STB12NK80Z 800V

 8.6. Size:381K  st
stf12n60m2.pdf

STF12N50U
STF12N50U

STF12N60M2 N-channel 600 V, 0.395 typ., 9 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTF12N60M2 600 V 0.450 9 A 25 W Extremely low gate charge Excellent output capacitance (COSS) profile 3 100% avalanche tested 2 Zener-protected 1Applications TO-220FP Switch

 8.7. Size:1040K  st
std12n65m5 stf12n65m5 sti12n65m5 stp12n65m5 stu12n65m5.pdf

STF12N50U
STF12N50U

STD12N65M5, STF12N65M5, STI12N65M5STP12N65M5, STU12N65M5N-channel 650 V, 0.39 , 8.5 A MDmesh V Power MOSFETDPAK, I2PAK, TO-220FP, TO-220, IPAKFeaturesVDSS @ RDS(on) Type ID PTOT3TJmax max231 21STD12N65M5 8.5 A 70 WIPAK TO-220STF12N65M5 8.5 A(1) 25 W3STI12N65M5 710 V

 8.8. Size:615K  st
stb12nm60n-1 stb12nm60n stf12nm60n stp12nm60n stw12nm60n.pdf

STF12N50U
STF12N50U

STB12NM60N/-1 - STF12NM60NSTP12NM60N - STW12NM60NN-channel 600V - 0.35 - 10A - D2/I2PAK - TO-220/FP - TO-247Second generation MDmesh Power MOSFETFeaturesVDSS Type RDS(on) ID3(@Tjmax)31 21STB12NM60N 650V

 8.9. Size:618K  st
stb12nm60n-1 stf12nm60n stp12nm60n stw12nm60n.pdf

STF12N50U
STF12N50U

STB12NM60N/-1 - STF12NM60NSTP12NM60N - STW12NM60NN-channel 600V - 0.35 - 10A - D2/I2PAK - TO-220/FP - TO-247Second generation MDmesh Power MOSFETFeaturesVDSS Type RDS(on) ID3(@Tjmax)31 21STB12NM60N 650V

 8.10. Size:837K  st
stf12n65m2.pdf

STF12N50U
STF12N50U

STF12N65M2N-channel 650 V, 0.42 typ., 8 A MDmesh M2Power MOSFET in a TO-220FP packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTF12N65M2 650 V 0.5 8 A Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested3 2 Zener-protected1 ApplicationsTO-220FP Switching applicationsFigure

 8.11. Size:683K  st
stf12nk65z.pdf

STF12N50U
STF12N50U

STF12NK65Z N-channel 650 V, 0.6 typ., 10 A SuperMESH Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTF12NK65Z 650 V 0.7 10 A 35 W Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Zener-protected Applications TO-220FP Switching applications Figure

 8.12. Size:407K  st
stf12n120k5.pdf

STF12N50U
STF12N50U

STF12N120K5, STFW12N120K5N-channel 1200 V, 0.62 typ., 12 A MDmesh K5 Power MOSFETs in TO-220FP and TO-3PF packagesDatasheet - production dataFeatures Order code VDS RDS(on) max. ID PTOTSTF12N120K5 40 W 1200 V 0.69 12 A STFW12N120K5 63 W111 Industrys lowest RDS(on) x area3321 2 Industrys best figure of merit (FoM) 1TO-220FP Ultra

 8.13. Size:835K  st
stp12nk60z stf12nk60z stw12nk60z.pdf

STF12N50U
STF12N50U

STP12NK60ZSTF12NK60Z, STW12NK60ZN-channel 650 V @Tjmax, 0.53 , 10 A TO-220, TO-220FP, TO-247Zener-protected SuperMESH Power MOSFETFeaturesVDSS RDS(on) Type ID PW(@Tjmax) max332STP12NK60Z 650 V

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