STP165N10F4 - параметры транзистора MOSFET, его аналоги, datasheet

STP165N10F4 Даташит. Основные параметры и характеристики. Поиск аналогов

   Наименование прибора: STP165N10F4
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 315 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 62 ns
   Cossⓘ - Выходная емкость: 939 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0055 Ohm
   Тип корпуса: TO220

Аналог (замена) для STP165N10F4

- подбор ⓘ MOSFET транзистора по параметрам

STP165N10F4 Datasheet (PDF)

..1. Size:666K st
stp165n10f4.pdf pdf_icon

STP165N10F4N-channel 100 V, 4.4 m, 120 A TO-220STripFET DeepGATE Power MOSFETFeaturesOrder code VDSS RDS(on) max IDSTP165N10F4 100 V

9.1. Size:1053K st
stp16n65m5 stu16n65m5 stw16n65m5 sti16n65m5 stf16n65m5.pdf pdf_icon

STF16N65M5, STI16N65M5STP16N65M5,STU16N65M5,STW16N65M5N-channel 650 V, 0.240 , 12 A MDmesh V Power MOSFETin TO-220FP, TO-220, IPAK, I2PAK, TO-247FeaturesVDSS @ RDS(on) Type IDTJmax max33 322 21STF16N65M51 1TO-220STI16N65M5 TO-247 TO-220FPSTP16N65M5 710 V

9.2. Size:1099K st
stf16n65m5 sti16n65m5 stp16n65m5 stu16n65m5 stw16n65m5.pdf pdf_icon

STF16N65M5, STI16N65M5STP16N65M5,STU16N65M5,STW16N65M5N-channel 650 V, 0.230 , 12 A MDmesh V Power MOSFETin TO-220FP, IPAK, TO-220, IPAK, TO-247FeaturesTABTABVDSS @ RDS(on) Type IDTJmax max32 3 3211 2STF16N65M51TO-220FPTO-220STI16N65M5 IPAKSTP16N65M5 710 V

9.3. Size:294K st
stb16nk65z-s stp16nk65z.pdf pdf_icon

STP16NK65ZSTB16NK65Z-SN-CHANNEL 650V - 0.38 - 13A TO-220 / I2SPAKZener - Protected SuperMESH MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID PwSTP16NK65Z 650 V

9.4. Size:577K st
stb16nm50n stf16nm50n sti16nm50n stp16nm50n stw16nm50n.pdf pdf_icon

STB16NM50N - STF/I16NM50NSTP16NM50N - STW16NM50NN-channel 500 V - 0.21 - 15 A MDmesh II Power MOSFETD2PAK - I2PAK - TO-220 - TO-247- TO-220FPFeaturesVDSS RDS(on) Type ID3(@Tjmax) max31 21STB16NM50N 550 V 0.26 15 ADPAKIPAKSTI16NM50N 550 V 0.26 15 A3STF16NM50N 550 V 0.26 15 A (1)21STP16NM50N 550 V 0.26 15 ATO-247STW16NM50N 550

9.5. Size:337K st
stp16nf06l.pdf pdf_icon

STP16NF06LSTP16NF06LFPN-CHANNEL 60V - 0.07 - 16A TO-220/TO-220FPSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP16NF06L 60 V

9.6. Size:1255K st
std16n50m2 stf16n50m2 stp16n50m2.pdf pdf_icon

STD16N50M2, STF16N50M2, STP16N50M2N-channel 500 V, 0.24 typ.,13 A, MDmesh M2 Power MOSFETs in DPAK, TO-220FP and TO-220 packagesDatasheet - preliminary dataFeaturesTAB3Order codes VDS @ TJmax RDS(on) max. ID1DPAKSTD16N50M2STF16N50M2 550 V 0.28 13 ASTP16N50M2TAB Extremely low gate charge Excellent output capacitance (Coss) profile3322 10

9.7. Size:466K st
std16nf25 stf16nf25 stp16nf25.pdf pdf_icon

STD16NF25STF16NF25 - STP16NF25N-channel 250V - 0.195 - 13A - DPAK/TO-220/TO-220FPLow gate charge STripFET II Power MOSFETFeaturesRDS(on) Type VDSS ID PwMax3STD16NF25 250V

9.8. Size:42K st
stp16l.pdf pdf_icon

STP16N10LN - CHANNEL 100V - 0.014 - 16A - TO-220POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP16N10L 100 V

9.9. Size:54K st
stp16nb25-.pdf pdf_icon

STP16NB25STP16NB25FP N - CHANNEL 250V - 0.220 - 16A - TO-220/TO-220FPPowerMESH MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP16NB25 250 V

9.10. Size:50K st
stp16n10l.pdf pdf_icon

STP16N10LN - CHANNEL 100V - 0.14 - 16A - TO-220 POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP16N10L 100 V

9.11. Size:317K st
stp16nf06fp.pdf pdf_icon

STP16NF06STP16NF06FPN-channel 60V - 0.08 - 16A - TO-220/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP16NF06 60V

9.12. Size:344K st
stp16nb25.pdf pdf_icon

STP16NB25STP16NB25FPN - CHANNEL 250V - 0.220 - 16A - TO-220/TO-220FPPowerMESH MOSFETTYPE VDSS RDS(on) IDSTP16NB25 250 V

9.13. Size:188K st
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STP16NE06LSTP16NE06L/FPN - CHANNEL ENHANCEMENT MODESINGLE FEATURE SIZE POWER MOSFETTARGET DATATYPE V R IDSS DS(on) DSTP16NE06L 60 V

9.14. Size:182K st
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STP16NE06LSTP16NE06L/FPN - CHANNEL ENHANCEMENT MODESINGLE FEATURE SIZE POWER MOSFETTARGET DATATYPE V R IDSS DS(on) DSTP16NE06L 60 V

9.15. Size:274K st
stp16nf06l-fp.pdf pdf_icon

STP16NF06LSTP16NF06LFPN-CHANNEL 60V - 0.07 - 16A TO-220/TO-220FPSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP16NF06L 60 V

9.16. Size:337K st
stp16ne06.pdf pdf_icon

STP16NE06STP16NE06FPN - CHANNEL 60V - 0.08 - 16A - TO-220/TO-220FPSTripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP16NE06 60 V

9.17. Size:439K st
stp16n60m2 stu16n60m2.pdf pdf_icon

STP16N60M2, STU16N60M2 N-channel 600 V, 0.28 typ., 12 A MDmesh M2 Power MOSFET in TO-220 and IPAK packages Datasheet - production data Features TABOrder code V R max. I DS DS(on) DSTP16N60M2 600 V 0.32 12 A STU16N60M2 3 2TAB1TO-220 Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested 32IPAK

9.18. Size:367K st
stp16nf06.pdf pdf_icon

STP16NF06STP16NF06FPN-CHANNEL 60V - 0.08 - 16A TO-220/TO-220FPSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP16NF06 60 V

9.19. Size:231K st
stp16ns25 stp16ns25fp.pdf pdf_icon

STP16NS25STP16NS25FPN-CHANNEL 250V - 0.23 - 16A TO-220 / TO-220FPMESH OVERLAY MOSFETTYPE VDSS RDS(on) IDSTP16NS25 250 V

9.20. Size:574K st
stb16nm50n stf16nm50n sti16nm50n stp16nm50n stw16nm50n.pdf pdf_icon

9.21. Size:336K st
stp16ne06 stp16ne06fp 2.pdf pdf_icon

STP16NE06STP16NE06FPN - CHANNEL 60V - 0.08 - 16A - TO-220/TO-220FPSTripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP16NE06 60 V

9.22. Size:330K st
stp16ns25.pdf pdf_icon

STP16NS25STP16NS25FPN-CHANNEL 250V - 0.23 - 16A TO-220 / TO-220FPMESH OVERLAY MOSFETTYPE VDSS RDS(on) IDSTP16NS25 250 V

9.23. Size:259K st
stp16nf06lfp.pdf pdf_icon

STP16NF06LSTP16NF06LFPN-CHANNEL 60V - 0.07 - 16A TO-220/TO-220FPSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP16NF06L 60 V

9.24. Size:664K st
stp160n3ll.pdf pdf_icon

STP160N3LLN-channel 30 V, 0.0024 typ., 160 A STripFET VI DeepGATEPower MOSFET in a TO-220 packageDatasheet - preliminary dataFeaturesOrder code VDS RDS(on) max IDTABSTP160N3LL 30 V 0.0032 160 A RDS(on) * Qg industry benchmark3 Extremely low on-resistance RDS(on)21 High avalanche ruggednessTO-220 Low gate drive power lossesApplications

9.25. Size:338K st
stp16nk65z stb16nk65z-s.pdf pdf_icon

STP16NK65ZSTB16NK65Z-SN-CHANNEL 650V - 0.38 - 13A TO-220 / I2SPAKZener - Protected SuperMESH MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID PwSTP16NK65Z 650 V

9.26. Size:818K st
stp16n65m2 stu16n65m2.pdf pdf_icon

STP16N65M2, STU16N65M2N-channel 650 V, 0.32 typ., 11 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packagesDatasheet - production dataFeaturesTABOrder code VDS @ TJmax RDS(on) max IDTABSTP16N65M2 710 V 0.36 11 ASTU16N65M2 710 V 0.36 11 A3 Extremely low gate charge23 Excellent output capacitance (Coss) profile 121 100% avalanche tested

9.27. Size:745K st
stf16nk60z stp16nk60z stw16nk60z.pdf pdf_icon

STF16NK60ZSTP16NK60Z, STW16NK60ZN-channel 600 V, 038 , 14 A, TO-220, TO-220FP, TO-247Zener-protected SuperMESH Power MOSFETFeaturesRDS(on) Type VDSS ID PwmaxSTF16NK60Z 600 V

9.28. Size:323K st
stp16nf06 stp16nf06fp.pdf pdf_icon

STP16NF06STP16NF06FPN-channel 60V - 0.08 - 16A - TO-220/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP16NF06 60V

9.29. Size:813K st
stp160n4lf6.pdf pdf_icon

STP160N4LF6N-channel 40 V, 0.0021 m typ., 120 A, STripFET VIDeepGATE Power MOSFET in a TO-220 packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max ID PTOTTABSTP160N4LF6 40 V 0.0029 120 A 150 W RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Logic level drive321 High avalanche ruggednessTO-220 100% ava

9.30. Size:274K st
stp16nf06l stp16nf06lfp.pdf pdf_icon

STP16NF06LSTP16NF06LFPN-CHANNEL 60V - 0.07 - 16A TO-220/TO-220FPSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP16NF06L 60 V

9.31. Size:994K st
stp16n65m5 stu16n65m5 stw16n65m5 sti16n65m5 stf16n65m5 2.pdf pdf_icon

STF16N65M5, STI16N65M5STP16N65M5,STU16N65M5,STW16N65M5N-channel 650 V, 0.270 , 12 A MDmesh V Power MOSFETin TO-220FP, TO-220, IPAK, I2PAK, TO-247FeaturesVDSS @ RDS(on) Type IDTJmax max33 322 21STF16N65M51 1TO-220STI16N65M5 TO-247 TO-220FPSTP16N65M5 710 V

9.32. Size:346K st
stp16ne06 stp16ne06fp.pdf pdf_icon

STP16NE06STP16NE06FPN - CHANNEL 60V - 0.08 - 16A - TO-220/TO-220FPSTripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP16NE06 60 V

9.33. Size:394K st
stb160n75f3 stp160n75f3 stw160n75f3.pdf pdf_icon

STB160N75F3STP160N75F3 - STW160N75F3N-channel 75V - 3.5m - 120A - TO-220 - TO-247 - D2PAKSTripFET Power MOSFETFeaturesRDS(on)Type VDSS ID(max.)3STB160N75F3 75V 3.7 m120 A(1) 32211STP160N75F3 75V 4 m TO-220120 A(1)TO-247STW160N75F3 75V 4 m120 A(1)1. Current limited by package31 Ultra low on-resistanceDPAK 100% Avalanche tes

9.34. Size:229K inchange semiconductor
stp16nf06 istp16nf06.pdf pdf_icon

N-Channel MOSFET Transistor STP16NF06ISTP16NF06DESCRIPTIONDrain Current I = 16A@ T =25D CStatic Drain-Source On-Resistance: R = 100m(Max)DS(on)Fast Switching SpeedMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONShigh packing density for low on-resistancerugged avalanchecharacteristics and less critical

9.35. Size:206K inchange semiconductor
stp16nf06.pdf pdf_icon

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP16NF06FEATURESTypical R (on)=0.08DSWith low gate drive requirements100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSolenold and relay dirversDC-DC &DC-CAconvertersAutomotive environmentABSOLUTE MAXIMUM RATINGS(T =25)aSY

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