STP180NS04ZCN-channel 40 V clamped 3.6 m typ., 120 A fully protected SAFeFET Power MOSFET in a TO-220 packageDatasheet - production dataFeatures TAB Order code VDS RDS(on) max IDSTP180NS04ZC 40 V clamped 4.2 m 120 A Low capacitance and gate charge 100% avalanche tested32 175 C maximum junction temperature1TO-220Applications Switching and line

STP180N4F6 N-channel 40 V, 2.1 m typ., 120 A STripFET F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTP180N4F6 40 V 2.7 m 120 A 190 W Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Power

STP180N10F3N-channel 100 V, 4.5 m, 120 A STripFETIII Power MOSFETTO-220FeaturesRDS(on) TABOrder codes VDSS IDmax.STP180N10F3 100 V 5.1 m 120 A Ultra low on-resistance32 100% avalanche tested1TO-220Applications High current switching applicationsDescriptionThis device is an N-channel enhancement mode Figure 1. Internal schematic diagramPo

STB180N55F3STP180N55F3N-channel 55V - 3.2m - 120A - D2PAK/TO-220STripFET Power MOSFETFeaturesType VDSS RDS(on) ID PwSTB180N55F3 55V 3.5m 120A(1) 330WSTP180N55F3 55V 3.8m 120A(1) 330W1. Value limited by wire bonding 33121 Ultra low on-resistance 100% avalanche tested TO-220 D2PAKDescriptionThis n-channel enhancement mode Power MOSFET is the l