STP185N55F3 - описание и поиск аналогов

 ..1. Size:338K  st
 stb185n55f3 stp185n55f3.pdf 

STB185N55F3 STP185N55F3 N-channel 55V - 3.2m - 120A - D2PAK/TO-220 STripFET Power MOSFET Features Type VDSS RDS(on) ID Pw STB185N55F3 55V 3.5m 120A(1) 330W STP185N55F3 55V 3.8m 120A(1) 330W 1. Value limited by wire bonding 3 3 Ultra low on-resistance 1 2 1 100% avalanche tested TO-220 D2PAK Description This n-channel enhancement mode Power MOSFET is the

 9.1. Size:669K  1
 stp180n4f6.pdf 

STP180N4F6 N-channel 40 V, 2.1 m typ., 120 A STripFET F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STP180N4F6 40 V 2.7 m 120 A 190 W Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Power

 9.2. Size:282K  1
 stp1806.pdf 

STP1806 N-CHANNEL 60V - 0.015 - 50A TO-220 STripFET POWER MOSFET TYPE VDSS RDS(on) ID STP1806 60 V

 9.3. Size:752K  st
 std18n55m5 stp18n55m5.pdf 

STD18N55M5, STP18N55M5 Datasheet N-channel 550 V, 0.150 typ., 16 A MDmesh M5 Power MOSFETs in a DPAK and TO-220 packages Features VDS @ TAB RDS(on)max. Order code Package TAB Tjmax. 3 2 STD18N55M5 DPAK 1 600 V 0.192 3 2 STP18N55M5 TO-220 DPAK TO-220 1 Extremely low RDS(on) Low gate charge and input capacitance Excellent switching performance D(2, TA

 9.4. Size:963K  st
 stb18nm80 stf18nm80 stw18nm80 stp18nm80.pdf 

STB18NM80, STF18NM80 STP18NM80, STW18NM80 N-channel 800 V, 0.25 , 17 A, MDmesh Power MOSFET D2PAK, TO-220FP, TO-220, TO-247 Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 2 2 1 STB18NM80 800 V

 9.5. Size:287K  st
 stp18n60dm2.pdf 

STP18N60DM2 N-channel 600 V, 0.260 typ., 12 A MDmesh DM2 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I DS DS(on) D STP18N60DM2 600 V 0.295 12 A Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Ze

 9.6. Size:337K  st
 stp18n10 stp18n10fi.pdf 

 9.7. Size:1200K  st
 stb18n60m2 stp18n60m2 stw18n60m2.pdf 

STB18N60M2, STP18N60M2, STW18N60M2 N-channel 600 V, 0.255 typ., 13 A MDmesh II Plus low Qg Power MOSFET in D2PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB VDS @ RDS(on) 3 Order codes ID 1 TJmax max 2 D PAK STB18N60M2 STP18N60M2 650 V 0.28 13 A TAB STW18N60M2 Extremely low gate charge 3 3 Lower RDS(on) x area vs previous generation

 9.8. Size:525K  st
 sti18n65m2 stp18n65m2.pdf 

STI18N65M2, STP18N65M2 N-channel 650 V, 0.275 typ., 12 A MDmesh M2 Power MOSFET in I PAK and TO-220 packages Datasheet - production data Features Order code VDS RDS(on) max ID TAB TAB STI18N65M2 650V 0.33 12 A STP18N65M2 3 3 2 2 1 1 Extremely low gate charge I2PAK TO-220 Excellent output capacitance (Coss) profile 100% avalanche tested Zener-prote

 9.9. Size:712K  st
 stp180n10f3.pdf 

STP180N10F3 N-channel 100 V, 4.5 m , 120 A STripFET III Power MOSFET TO-220 Features RDS(on) TAB Order codes VDSS ID max. STP180N10F3 100 V 5.1 m 120 A Ultra low on-resistance 3 2 100% avalanche tested 1 TO-220 Applications High current switching applications Description This device is an N-channel enhancement mode Figure 1. Internal schematic diagram Po

 9.10. Size:1048K  st
 stb18nm80 stf18nm80 stp18nm80 stw18nm80.pdf 

STB18NM80, STF18NM80, STP18NM80, STW18NM80 N-channel 800 V, 0.25 , 17 A, MDmesh Power MOSFET in D PAK, TO-220FP, TO-220 and TO-247 packages Datasheet production data Features RDS(on) Order codes VDSS max ID 3 3 2 1 STB18NM80 800 V

 9.11. Size:448K  st
 stb180n55f3 stp180n55f3.pdf 

STB180N55F3 STP180N55F3 N-channel 55V - 3.2m - 120A - D2PAK/TO-220 STripFET Power MOSFET Features Type VDSS RDS(on) ID Pw STB180N55F3 55V 3.5m 120A(1) 330W STP180N55F3 55V 3.8m 120A(1) 330W 1. Value limited by wire bonding 3 3 1 2 1 Ultra low on-resistance 100% avalanche tested TO-220 D2PAK Description This n-channel enhancement mode Power MOSFET is the l

 9.12. Size:791K  st
 stp180ns04zc.pdf 

STP180NS04ZC N-channel 40 V clamped 3.6 m typ., 120 A fully protected SAFeFET Power MOSFET in a TO-220 package Datasheet - production data Features TAB Order code VDS RDS(on) max ID STP180NS04ZC 40 V clamped 4.2 m 120 A Low capacitance and gate charge 100% avalanche tested 3 2 175 C maximum junction temperature 1 TO-220 Applications Switching and line

 9.13. Size:1417K  st
 stb18nm60nd stf18nm60nd stp18nm60nd stw18nm60nd.pdf 

STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND N-channel 600 V - 0.25 typ., 13 A FDmesh II Power MOSFET (with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247 packages Datasheet - production data Features TAB VDSS @ RDS(on) ID Order codes 3 TJmax max 1 3 2 STB18NM60ND D2PAK 1 TO-220FP STF18NM60ND 650 V

 9.14. Size:995K  st
 stb18nm60n stf18nm60n sti18nm60n stp18nm60n stw18nm60n.pdf 

STB18NM60N, STF18NM60N, STI18NM60N STP18NM60N, STW18NM60N N-channel 600 V, 0.27 , 13 A MDmesh II Power MOSFET in TO-220, TO-220FP, TO-247, D PAK and I PAK Features VDSS RDS(on) Order codes ID PW (@Tjmax) max. 3 3 1 2 STB18NM60N 110 W 1 D PAK STF18NM60N 30 W TO-247 3 2 STI18NM60N 650 V

 9.15. Size:1247K  st
 stb18n55m5 std18n55m5 stf18n55m5 stp18n55m5.pdf 

STB18N55M5, STD18N55M5 STF18N55M5, STP18N55M5 N-channel 550 V, 0.18 , 13 A, MDmesh V Power MOSFET in D PAK, DPAK, TO-220FP and TO-220 Features VDSS RDS(on) Order codes ID 3 @TJmax max 1 3 1 STB18N55M5 DPAK D PAK STD18N55M5 550 V

 9.16. Size:948K  st
 stf18n65m5 sti18n65m5 stp18n65m5 stw18n65m5.pdf 

STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 N-channel 650 V, 0.198 typ., 15 A MDmesh V Power MOSFET in TO-220FP, I PAK, TO-220 and TO-247 packages Datasheet production data Features TAB VDSS @ RDS(on) Order code ID TJmax max 3 2 1 3 STF18N65M5 2 1 TO-220FP STI18N65M5 I PAK 710 V

 9.17. Size:1158K  st
 stb18nm60n stf18nm60n stp18nm60n stw18nm60n.pdf 

STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N N-channel 600 V, 0.26 typ., 13 A MDmesh II Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 Datasheet production data Features TAB VDSS RDS(on) Order codes ID PTOT (@Tjmax) max. 3 1 3 2 STB18NM60N 110 W 1 D PAK STF18NM60N 30 W TO-220FP 650 V

 9.18. Size:205K  inchange semiconductor
 stp18nm80.pdf 

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP18NM80 FEATURES Typical R (on)=0.25 DS Low input capacitance and gate charge Low gate input resistances 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE