Справочник MOSFET. STP20N95K5

 

STP20N95K5 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: STP20N95K5

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 210 W

Предельно допустимое напряжение сток-исток (Uds): 950 V

Предельно допустимое напряжение затвор-исток (Ugs): 30 V

Пороговое напряжение включения Ugs(th): 5 V

Максимально допустимый постоянный ток стока (Id): 15.5 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 40 nC

Сопротивление сток-исток открытого транзистора (Rds): 0.33 Ohm

Тип корпуса: TO220

Аналог (замена) для STP20N95K5

 

STP20N95K5 Datasheet (PDF)

4.1. stp20ne06l stp20ne06lfp.pdf Size:107K _upd-mosfet

STP20N95K5
STP20N95K5

STP20NE06L STP20NE06LFP  N - CHANNEL 60V - 0.06 Ω - 20A TO-220/TO-220FP STripFET POWER MOSFET TYPE VDSS RDS(on) ID STP20NE06L 60 V < 0.07 Ω 20 A STP20NE06LFP 60 V < 0.07 Ω 13 A TYPICAL R = 0.06 Ω DS(on) EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED o LOW GATE CHARGE 100 C APPLICATION ORIENTED 3 3 CHARACTERIZATION 2 2 1 1 DESCRIPTION This Power Mosfet

4.2. stp20n65m5.pdf Size:1169K _upd-mosfet

STP20N95K5
STP20N95K5

STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5 N-channel 650 V, 0.160 Ω typ., 18 A MDmesh™ V Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages Datasheet — production data Features TAB TAB VDS @ RDS(on) Order codes ID 2 TJmax max 3 3 2 1 1 STB20N65M5 D2PAK I2PAK STI20N65M5 710 V 0.19 Ω 18 A TAB STP20N65M5 STW20N65M5 ■ Worldwide best RDS(on) * area 3 2

 4.3. stp20nm50fp.pdf Size:313K _upd-mosfet

STP20N95K5
STP20N95K5

STB20NM50 - STB20NM50-1 STP20NM50 - STP20NM50FP N-channel 500V - 0.20Ω - 20A - TO220/FP-D2PAK-I2PAK MDmesh™ Power MOSFET General features VDSS Type RDS(on) ID (@TJmax) 3 3 2 STB20NM50 550V < 0.25Ω 20A 2 1 1 TO-220 STB20NM50-1 550V < 0.25Ω 20A TO-220FP STP20NM50 550V < 0.25Ω 20A STP20NM50FP 550V < 0.25Ω 20A ■ High dv/dt and avalanche capabilities 3 3 1 2 1

4.4. stp20nm60a.pdf Size:300K _upd-mosfet

STP20N95K5
STP20N95K5

STB20NM60A-1 STP20NM60A - STF20NM60A N-CHANNEL 650V@Tjmax - 0.25Ω - 20A I²PAK/TO-220/TO-220FP MDmesh™ MOSFET TYPE VDSS @Tjmax RDS(on) ID STB20NM60A-1 650 V <0.29Ω 20 A STP20NM60A 650 V <0.29Ω 20 A STF20NM60A 650 V <0.29Ω 20 A 3 2 TYPICAL RDS(on) = 0.25Ω 3 1 2 1 HIGH dv/dt TO-220 I²PAK LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE 3 2 1 D

 4.5. stp20n20.pdf Size:343K _upd-mosfet

STP20N95K5
STP20N95K5

STP20N20 STF20N20 - STD20N20 N-CHANNEL 200V - 0.10Ω - 18A TO-220/TO-220FP/DPAK LOW GATE CHARGE STripFET™ II MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS(on) Id PTOT STD20N20 200 V < 0.125 Ω 18 A 90 W STF20N20 200 V < 0.125 Ω 18 A 25 W STP20N20 200 V < 0.125 Ω 18 A 90 W TYPICAL RDS(on) = 0.10 Ω 3 3 2 EXCEPTIONAL dv/dt CAPABILITY 2 1 1 LOW GATE C

4.6. stp20ne06.pdf Size:365K _st

STP20N95K5
STP20N95K5

STP20NE06 STP20NE06FP N - CHANNEL 60V - 0.06 ? - 20A TO-220/TO-220FP STripFET? POWER MOSFET TYPE VDSS RDS(on) ID STP20NE06 60 V < 0.080 ? 20 A STP20NE06FP 60 V < 0.080 ? 13 A TYPICAL R = 0.06 ? DS(on) EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC APPLICATION ORIENTED 3 3 CHARACTERIZATION 2 2 1 1 DESCRIPTION This Power Mosfet is the latest d

4.7. stp20nm50.pdf Size:532K _st

STP20N95K5
STP20N95K5

STP20NM50 - STP20NM50FP STB20NM50 - STB20NM50-1 N-CHANNEL 500V - 0.20? - 20A TO-220/FP/D2PAK/I2PAK MDmeshPower MOSFET TYPE VDSS RDS(on) ID STP20NM50/FP 500V <0.25? 20 A STB20NM50 500V <0.25? 20 A 3 STB20NM50-1 500V <0.25? 20 A 1 3 TYPICAL RDS(on) = 0.20? 2 D2PAK 1 HIGH dv/dt AND AVALANCHE CAPABILITIES TO-220 TO-220FP 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARG

4.8. stp20ne06-fp.pdf Size:372K _st

STP20N95K5
STP20N95K5

STP20NE06 STP20NE06FP N - CHANNEL 60V - 0.06 ? - 20A TO-220/TO-220FP STripFET? POWER MOSFET TYPE VDSS RDS(on) ID STP20NE06 60 V < 0.080 ? 20 A STP20NE06FP 60 V < 0.080 ? 13 A TYPICAL R = 0.06 ? DS(on) EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC APPLICATION ORIENTED 3 3 CHARACTERIZATION 2 2 1 1 DESCRIPTION This Power Mosfet is the latest d

4.9. stp20nm60.pdf Size:535K _st

STP20N95K5
STP20N95K5

STP20NM60 - STP20NM60FP STB20NM60 STB20NM60-1 N-CHANNEL 600V - 0.25? - 20A TO-220/FP/D2PAK/I2PAK MDmeshPower MOSFET TYPE VDSS RDS(on) ID STP20NM60 600 V < 0.29 ? 20 A STP20NM60FP 600 V < 0.29 ? 20 A STB20NM60 600 V < 0.29 ? 20 A 3 3 2 2 STB20NM60-1 600 V < 0.29 ? 20 A 1 1 TO-220 TO-220FP TYPICAL RDS(on) = 0.25? HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LO

4.10. stb20nk50z stf20nk50z stw20nk50z stp20nk50z.pdf Size:607K _st

STP20N95K5
STP20N95K5

STB20NK50Z, STF20NK50Z STP20NK50Z, STW20NK50Z N-channel 500 V, 0.23 ?, 17 A SuperMESH Power MOSFET Zener-protected TO-220, TO-247, TO-220FP, D2PAK Features RDS(on) Type VDSS ID PW max 3 3 2 2 STB20NK50Z 500 V < 0.27 ? 17 A 190 W 1 1 STF20NK50Z 500 V < 0.27 ? 17 A 40 W TO-220 TO-220FP STP20NK50Z 500 V < 0.27 ? 17 A 190 W STW20NK50Z 500 V < 0.27 ? 17 A 190 W 3 Extremely high

4.11. stf20nm60d stp20nm60fd stw20nm60fd.pdf Size:344K _st

STP20N95K5
STP20N95K5

STF20NM60D - STP20NM60FD STW20NM60FD N-channel 600V - 0.26? - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET (with fast diode) General features Type VDSS RDS(on) ID Pw STF20NM60D 600V <0.29? 20A 192W 3 STP20NM60FD 600V <0.29? 20A 45W 2 1 STW20NM60FD 600V <0.29? 20A 214W TO-220FP TO-247 High dv/dt and avalanche capabilities 100% Avalanche tested 3 Low input capacitance

4.12. stp20nm50fd.pdf Size:276K _st

STP20N95K5
STP20N95K5

STP20NM50FD STB20NM50FD-1 N-CHANNEL 500V - 0.22? - 20ATO-220/I2PAK FDmesh Power MOSFET (with FAST DIODE) TYPE VDSS RDS(on) Rds(on)*Qg ID STP20NM50FD 500V <0.25? 8.36 ?*nC 20 A STB20NM50FD-1 500V <0.25? 8.36 ?*nC 20 A TYPICAL RDS(on) = 0.22? HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED 3 3 2 1 2 1 LOW INPUT CAPACITANCE AND GATE CHARGE I2PAK TO-220 LOW GATE INPU

4.13. stp20ne06l-.pdf Size:53K _st

STP20N95K5
STP20N95K5

STP20NE06L STP20NE06LFP ? N - CHANNEL 60V - 0.07 ? - 20 A - TO-220/TO-220FP STripFET? POWER MOSFET PRELIMINARY DATA TYPE V R I DSS DS(on) D STP20NE06L 60 V < 0.085 ? 20 A STP20NE06LFP 60 V < 0.085 ? 13 A TYPICAL R = 0.07 ? DS(on) EXCEPTIONAL dV/dt CAPABILTY 100% AVALANCHE TESTED o LOW GATE CHARGE 100 C HIGH dV/dt CAPABILITY 3 3 2 2 APPLICATION ORIENTED 1 1 CHARACTERIZAT

4.14. stb20nm50 stb20nm50-1 stp20nm50 stp20nm50fp.pdf Size:315K _st

STP20N95K5
STP20N95K5

STB20NM50 - STB20NM50-1 STP20NM50 - STP20NM50FP N-channel 500V - 0.20? - 20A - TO220/FP-D2PAK-I2PAK MDmesh Power MOSFET General features VDSS Type RDS(on) ID (@TJmax) 3 3 2 STB20NM50 550V < 0.25? 20A 2 1 1 TO-220 STB20NM50-1 550V < 0.25? 20A TO-220FP STP20NM50 550V < 0.25? 20A STP20NM50FP 550V < 0.25? 20A High dv/dt and avalanche capabilities 3 3 1 2 1 100% avalanche

4.15. stp20n10l.pdf Size:379K _st

STP20N95K5
STP20N95K5

STP20N10L STP20N10LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP20N10L 100 V < 0.12 ? 20 A STP20N10LFI 100 V < 0.12 ? 12 A TYPICAL R = 0.09 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW GATE CHARGE 2 2 1 1 HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE LOGIC LEV

4.16. stp20ne10.pdf Size:81K _st

STP20N95K5
STP20N95K5

STP20NE10 ? N - CHANNEL 100V - 0.07? - 20A - TO-220 STripFET? MOSFET TYPE VDSS RDS(on) ID STP20NE10 100 V < 0.1 ? 20 A TYPICAL R = 0.07 ? DS(on) EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION 3 DESCRIPTION 2 This Power MOSFET is the latest development of 1 SGS-THOMSON unique Single Feature Size? strip-based process.The resulting tr

4.17. stp20ne06l.pdf Size:104K _st

STP20N95K5
STP20N95K5

STP20NE06L STP20NE06LFP ? N - CHANNEL 60V - 0.06 ? - 20A TO-220/TO-220FP STripFET? POWER MOSFET TYPE VDSS RDS(on) ID STP20NE06L 60 V < 0.07 ? 20 A STP20NE06LFP 60 V < 0.07 ? 13 A TYPICAL R = 0.06 ? DS(on) EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED o LOW GATE CHARGE 100 C APPLICATION ORIENTED 3 3 CHARACTERIZATION 2 2 1 1 DESCRIPTION This Power Mosfet is the latest

4.18. stb20nf06l stf20nf06l stp20nf06l.pdf Size:393K _st

STP20N95K5
STP20N95K5

STB20NF06L - STF20NF06L STP20NF06L N-channel 60V - 0.06? - 20A - D2PAK/TO-220/TO-220FP STripFET II Power MOSFET General features Type VDSS RDS(on) ID STB20NF06L 60V <0.07? 20A 3 STF20NF06L 60V <0.07? 20A (1) 3 2 2 1 1 STP20NF06L 60V <0.07? 20A TO-220 TO-220FP 1. Refer to SOA for the max allowable current value on FP-type due to Rth value Avalanche rugged technology 3 1 10

4.19. std20nf20 stf20nf20 stp20nf20.pdf Size:909K _st

STP20N95K5
STP20N95K5

STD20NF20 STF20NF20, STP20NF20 N-channel 200 V, 0.10 ?, 18 A DPAK, TO-220, TO-220FP low gate charge STripFET Power MOSFET Features Type VDSS RDS(on) ID PW STD20NF20 200 V < 0.125 ? 18 A 110 W 3 3 STF20NF20 200 V < 0.125 ? 18 A 30 W 2 2 1 1 STP20NF20 200 V < 0.125 ? 18 A 110 W TO-220 TO-220FP Exceptional dv/dt capability Low gate charge 3 1 100% avalanche tested DPAK App

4.20. stp20n10.pdf Size:343K _st

STP20N95K5
STP20N95K5

STP20N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP20N10 100 V < 0.12 ? 20 A TYPICAL R = 0.09 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE 3 HIGH CURRENT CAPABILITY 2 1 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION TO-220 APPLICATIONS HIGH CURRENT, HIGH

4.21. stb20nm60 stp20nm60fp stp20nm60 stw20nm60.pdf Size:444K _st

STP20N95K5
STP20N95K5

STB20NM60-1 - STP20NM60FP STB20NM60 - STP20NM60 - STW20NM60 N-channel 600V - 0.25? - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET Features Type VDSS RDS(on) ID 3 1 STP20NM60 600V < 0.29? 20A D?PAK STP20NM60FP 600V < 0.29? 20A TO-247 STB20NM60 600V < 0.29? 20A STB20NM60-1 600V < 0.29? 20A 3 2 1 STW20NM60 600V < 0.29? 20A TO-220FP High dv/dt and avalanche capabilitie

4.22. stp20n10-.pdf Size:140K _st

STP20N95K5
STP20N95K5

STP20N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STP20N10 100 V < 0.12 ? 20 A TYPICAL R = 0.09 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE 3 HIGH CURRENT CAPABILITY 2 1 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION TO-220 APPLICATIONS HIGH CURRENT, HI

4.23. stp20ne06--.pdf Size:44K _st

STP20N95K5
STP20N95K5

STP20NE06 STP20NE06FP ? N - CHANNEL 60V - 0.07 ? - 20A - TO-220/TO-220FP STripFET? POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP20NE06 60 V < 0.085 ? 20 A STP20NE06FP 60 V < 0.085 ? 13 A TYPICAL R = 0.07 ? DS(on) AVALANCHERUGGED TECHNOLOGY 100% AVALANCHE TESTED 175oC OPERATING TEMPERATURE HIGH dV/dt CAPABILITY 3 3 APPLICATION ORIENTED 2 2 1 1 CHARACTERIZATION DE

4.24. stp20n06-fi.pdf Size:399K _st

STP20N95K5
STP20N95K5

STP20N06 STP20N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP20N06 60 V < 0.085 ? 20 A STP20N06FI 60 V < 0.085 ? 13 A TYPICAL R = 0.06 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW GATE CHARGE 2 2 1 1 HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED TO-22

4.25. stp20n06.pdf Size:391K _st

STP20N95K5
STP20N95K5

STP20N06 STP20N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP20N06 60 V < 0.085 ? 20 A STP20N06FI 60 V < 0.085 ? 13 A TYPICAL R = 0.06 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW GATE CHARGE 2 2 1 1 HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED TO-22

4.26. stp20nm65n stf20nm65n.pdf Size:858K _st

STP20N95K5
STP20N95K5

STP20NM65N STF20NM65N N-channel 650 V, 0.250 ?, 15 A TO-220, TO-220FP second generation MDmesh Power MOSFET Features VDSS RDS(on) Order codes ID @Tjmax max. STP20NM65N 710 V 0.270 ? 15 A STF20NM65N 3 3 100 % avalanche tested 2 2 1 1 Low input capacitance and gate charge TO-220 TO-220FP Low gate input resistance Application Switching applications Figure 1. Internal

4.27. stb20nm60a-1 stp20nm60a stf20nm60a.pdf Size:309K _st

STP20N95K5
STP20N95K5

STB20NM60A-1 STP20NM60A - STF20NM60A N-CHANNEL 650V@Tjmax - 0.25? - 20A I?PAK/TO-220/TO-220FP MDmesh MOSFET TYPE VDSS @Tjmax RDS(on) ID STB20NM60A-1 650 V <0.29? 20 A STP20NM60A 650 V <0.29? 20 A STF20NM60A 650 V <0.29? 20 A 3 2 TYPICAL RDS(on) = 0.25? 3 1 2 1 HIGH dv/dt TO-220 I?PAK LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE 3 2 1 DESCRIPTION TO-22

4.28. stp20nk50z.pdf Size:522K _st

STP20N95K5
STP20N95K5

STP20NK50Z - STW20NK50Z STB20NK50Z N-CHANNEL 500V - 0.23? - 20A TO-220/D2PAK/TO-247 Zener-Protected SuperMESHPower MOSFET TYPE VDSS RDS(on) ID Pw STB20NK50Z 500 V < 0.27 ? 20 A 190 W STP20NK50Z 500 V < 0.27 ? 20 A 190 W STW20NK50Z 500 V < 0.27 ? 17 A 190 W TYPICAL RDS(on) = 0.23 ? 3 2 3 EXTREMELY HIGH dv/dt CAPABILITY 1 2 1 100% AVALANCHE TESTEDGATE CHARGE TO-220 TO-247 MINIM

4.29. stb20nm50fd stf20nm50fd stp20nm50fd.pdf Size:401K _st

STP20N95K5
STP20N95K5

STB20NM50FD STF20NM50FD - STP20NM50FD N-channel 500 V, 0.22 ?, 20 A D2PAK, TO-220FP, TO-220 FDmesh Power MOSFET (with fast diode) Features RDS(on) Type VDSS RDS(on)* Qg ID max STB20NM50FD 500 V < 0.25 ? 8.36 ?* nC 20 A STF20NM50FD 500 V < 0.25 ? 8.36 ?* nC 20 A 3 3 2 2 STP20NM50FD 500 V < 0.25 ? 8.36 ?* nC 20 A 1 1 TO-220 TO-220FP High dv/dt and avalanche capabilities 3 1

4.30. stp20nf06 stf20nf06.pdf Size:335K _st

STP20N95K5
STP20N95K5

STP20NF06 STF20NF06 N-channel 60V - 0.06? - 20A - TO-220/TO-220FP STripFET II Power MOSFET Features Type VDSS RDS(on) ID STP20NF06 60V <0.07? 20A STF20NF06 60V <0.07? 20A(1) 3 3 1. Refer to soa for the max allowable current value on 2 2 1 FP-type due to Rth value 1 TO-220FP TO-220 Avalanche rugged technology 100% avalanche tested 175oC operating temperature High dv/dt

Другие MOSFET... IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 

 
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