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APT20M40BVR MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: APT20M40BVR
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 59 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 130 nC
   trⓘ - Время нарастания: 14 ns
   Cossⓘ - Выходная емкость: 980 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm
   Тип корпуса: TO247

 Аналог (замена) для APT20M40BVR

 

 

APT20M40BVR Datasheet (PDF)

 ..1. Size:92K  apt
 apt20m40bvr.pdf

APT20M40BVR APT20M40BVR

APT20M40BVR200V 59A 0.040POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

 6.1. Size:54K  apt
 apt20m40hvr.pdf

APT20M40BVR APT20M40BVR

APT20M40HVR200V 45A 0.040POWER MOS VTO-258Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lowe

 7.1. Size:97K  apt
 apt20m45svfr.pdf

APT20M40BVR APT20M40BVR

APT20M45SVFR200V 56A 0.045POWER MOS V FREDFETD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes

 7.2. Size:92K  apt
 apt20m45bvr.pdf

APT20M40BVR APT20M40BVR

APT20M45BVR200V 56A 0.045POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

 7.3. Size:66K  apt
 apt20m42hvr.pdf

APT20M40BVR APT20M40BVR

APT20M42HVR200V 50A 0.042WPOWER MOS VTO-258Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

 7.4. Size:94K  apt
 apt20m45bvfr.pdf

APT20M40BVR APT20M40BVR

APT20M45BVFR200V 56A 0.045POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes

 7.5. Size:95K  apt
 apt20m45svr.pdf

APT20M40BVR APT20M40BVR

APT20M45SVR200V 56A 0.045POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement D3PAKmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L

 7.6. Size:375K  inchange semiconductor
 apt20m45bvr.pdf

APT20M40BVR APT20M40BVR

isc N-Channel MOSFET Transistor APT20M45BVRFEATURESDrain Current I =56A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.045(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 7.7. Size:375K  inchange semiconductor
 apt20m45bvfr.pdf

APT20M40BVR APT20M40BVR

isc N-Channel MOSFET Transistor APT20M45BVFRFEATURESDrain Current I = 56A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.045(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

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