STP20NK50Z. Аналоги и основные параметры
Наименование производителя: STP20NK50Z
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 190 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 328 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.27 Ohm
Тип корпуса: TO220
Аналог (замена) для STP20NK50Z
- подборⓘ MOSFET транзистора по параметрам
STP20NK50Z даташит
..2. Size:575K st
stf20nk50z stp20nk50z.pdf 
STF20NK50Z, STP20NK50Z N-channel 500 V, 0.23 , 17 A SuperMESH Power MOSFET Zener-protected in TO-220FP and TO-220 packages Datasheet production data Features RDS(on) Order codes VDSS ID PTOT TAB max STF20NK50Z 500 V
..3. Size:522K st
stp20nk50z.pdf 
STP20NK50Z - STW20NK50Z STB20NK50Z N-CHANNEL 500V - 0.23 - 20A TO-220/D2PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE VDSS RDS(on) ID Pw STB20NK50Z 500 V
..4. Size:135K st
stp20nk50z stw20nk50z.pdf 
STP20NK50Z - STW20NK50Z N-CHANNEL 500V - 0.23 - 20A TO-220/TO-247 Zener-Protected SuperMESH Power MOSFET TARGET DATA TYPE VDSS RDS(on) ID Pw STP20NK50Z 500 V
8.1. Size:335K st
stp20nf06 stf20nf06.pdf 
STP20NF06 STF20NF06 N-channel 60V - 0.06 - 20A - TO-220/TO-220FP STripFET II Power MOSFET Features Type VDSS RDS(on) ID STP20NF06 60V
8.2. Size:313K st
stb20nm50-1 stb20nm50 stb20nm50t4 stp20nm50fp.pdf 
STB20NM50 - STB20NM50-1 STP20NM50 - STP20NM50FP N-channel 500V - 0.20 - 20A - TO220/FP-D2PAK-I2PAK MDmesh Power MOSFET General features VDSS Type RDS(on) ID (@TJmax) 3 3 2 STB20NM50 550V
8.3. Size:309K st
stb20nm60a-1 stp20nm60a stf20nm60a.pdf 
STB20NM60A-1 STP20NM60A - STF20NM60A N-CHANNEL 650V@Tjmax - 0.25 - 20A I PAK/TO-220/TO-220FP MDmesh MOSFET TYPE VDSS @Tjmax RDS(on) ID STB20NM60A-1 650 V
8.4. Size:858K st
stp20nm65n stf20nm65n.pdf 
STP20NM65N STF20NM65N N-channel 650 V, 0.250 , 15 A TO-220, TO-220FP second generation MDmesh Power MOSFET Features VDSS RDS(on) Order codes ID @Tjmax max. STP20NM65N 710 V 0.270 15 A STF20NM65N 3 3 100 % avalanche tested 2 2 1 1 Low input capacitance and gate charge TO-220 TO-220FP Low gate input resistance Application Switching applications F
8.5. Size:315K st
stb20nm50 stb20nm50-1 stp20nm50 stp20nm50fp.pdf 
STB20NM50 - STB20NM50-1 STP20NM50 - STP20NM50FP N-channel 500V - 0.20 - 20A - TO220/FP-D2PAK-I2PAK MDmesh Power MOSFET General features VDSS Type RDS(on) ID (@TJmax) 3 3 2 STB20NM50 550V
8.6. Size:1458K st
stb20n95k5 stf20n95k5 stp20n95k5 stw20n95k5.pdf 
STB20N95K5, STF20N95K5 STP20N95K5, STW20N95K5 N-channel 950 V, 0.275 , 17.5 A SuperMESH 5 Power MOSFET in D PAK, TO-220FP, TO-220 and TO-247 packages Datasheet production data Features TAB Order codes VDSS RDS(on)max ID PW 3 STB20N95K5 250 W 1 3 STF20N95K5 40 W 2 D PAK 1 950 V
8.7. Size:401K st
stb20nm50fd stf20nm50fd stp20nm50fd.pdf 
STB20NM50FD STF20NM50FD - STP20NM50FD N-channel 500 V, 0.22 , 20 A D2PAK, TO-220FP, TO-220 FDmesh Power MOSFET (with fast diode) Features RDS(on) Type VDSS RDS(on)* Qg ID max STB20NM50FD 500 V
8.8. Size:1169K st
stb20n65m5 sti20n65m5 stp20n65m5 stw20n65m5.pdf 
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5 N-channel 650 V, 0.160 typ., 18 A MDmesh V Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages Datasheet production data Features TAB TAB VDS @ RDS(on) Order codes ID 2 TJmax max 3 3 2 1 1 STB20N65M5 D2PAK I2PAK STI20N65M5 710 V 0.19 18 A TAB STP20N65M5 STW20N65M5 Worldwide best RDS(on) * area 3 2
8.9. Size:300K st
stp20nm60a.pdf 
STB20NM60A-1 STP20NM60A - STF20NM60A N-CHANNEL 650V@Tjmax - 0.25 - 20A I PAK/TO-220/TO-220FP MDmesh MOSFET TYPE VDSS @Tjmax RDS(on) ID STB20NM60A-1 650 V
8.10. Size:379K st
stp20n10l.pdf 
STP20N10L STP20N10LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP20N10L 100 V
8.11. Size:343K st
stp20n20.pdf 
STP20N20 STF20N20 - STD20N20 N-CHANNEL 200V - 0.10 - 18A TO-220/TO-220FP/DPAK LOW GATE CHARGE STripFET II MOSFET Table 1 General Features Figure 1 Package TYPE VDSS RDS(on) Id PTOT STD20N20 200 V
8.12. Size:104K st
stp20ne06l.pdf 
STP20NE06L STP20NE06LFP N - CHANNEL 60V - 0.06 - 20A TO-220/TO-220FP STripFET POWER MOSFET TYPE VDSS RDS(on) ID STP20NE06L 60 V
8.13. Size:444K st
stb20nm60 stp20nm60fp stp20nm60 stw20nm60.pdf 
STB20NM60-1 - STP20NM60FP STB20NM60 - STP20NM60 - STW20NM60 N-channel 600V - 0.25 - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET Features Type VDSS RDS(on) ID 3 1 STP20NM60 600V
8.14. Size:343K st
stp20n10.pdf 
STP20N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP20N10 100 V
8.15. Size:535K st
stp20nm60.pdf 
STP20NM60 - STP20NM60FP STB20NM60 STB20NM60-1 N-CHANNEL 600V - 0.25 - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET TYPE VDSS RDS(on) ID STP20NM60 600 V
8.16. Size:393K st
stb20nf06l stf20nf06l stp20nf06l.pdf 
STB20NF06L - STF20NF06L STP20NF06L N-channel 60V - 0.06 - 20A - D2PAK/TO-220/TO-220FP STripFET II Power MOSFET General features Type VDSS RDS(on) ID STB20NF06L 60V
8.17. Size:372K st
stp20ne06-fp.pdf 
STP20NE06 STP20NE06FP N - CHANNEL 60V - 0.06 - 20A TO-220/TO-220FP STripFET POWER MOSFET TYPE VDSS RDS(on) ID STP20NE06 60 V
8.18. Size:107K st
stp20ne06l stp20ne06lfp.pdf 
STP20NE06L STP20NE06LFP N - CHANNEL 60V - 0.06 - 20A TO-220/TO-220FP STripFET POWER MOSFET TYPE VDSS RDS(on) ID STP20NE06L 60 V
8.19. Size:344K st
stf20nm60d stp20nm60fd stw20nm60fd.pdf 
STF20NM60D - STP20NM60FD STW20NM60FD N-channel 600V - 0.26 - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET (with fast diode) General features Type VDSS RDS(on) ID Pw STF20NM60D 600V
8.20. Size:140K st
stp20n10-.pdf 
STP20N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STP20N10 100 V
8.21. Size:391K st
stp20n06.pdf 
STP20N06 STP20N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP20N06 60 V
8.23. Size:909K st
std20nf20 stf20nf20 stp20nf20.pdf 
STD20NF20 STF20NF20, STP20NF20 N-channel 200 V, 0.10 , 18 A DPAK, TO-220, TO-220FP low gate charge STripFET Power MOSFET Features Type VDSS RDS(on) ID PW STD20NF20 200 V
8.24. Size:276K st
stp20nm50fd.pdf 
STP20NM50FD STB20NM50FD-1 N-CHANNEL 500V - 0.22 - 20ATO-220/I2PAK FDmesh Power MOSFET (with FAST DIODE) TYPE VDSS RDS(on) Rds(on)*Qg ID STP20NM50FD 500V
8.25. Size:399K st
stp20n06-fi.pdf 
STP20N06 STP20N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP20N06 60 V
8.26. Size:532K st
stp20nm50.pdf 
STP20NM50 - STP20NM50FP STB20NM50 - STB20NM50-1 N-CHANNEL 500V - 0.20 - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET TYPE VDSS RDS(on) ID STP20NM50/FP 500V
8.27. Size:365K st
stp20ne06.pdf 
STP20NE06 STP20NE06FP N - CHANNEL 60V - 0.06 - 20A TO-220/TO-220FP STripFET POWER MOSFET TYPE VDSS RDS(on) ID STP20NE06 60 V
8.28. Size:53K st
stp20ne06l-.pdf 
STP20NE06L STP20NE06LFP N - CHANNEL 60V - 0.07 - 20 A - TO-220/TO-220FP STripFET POWER MOSFET PRELIMINARY DATA TYPE V R I DSS DS(on) D STP20NE06L 60 V
8.29. Size:44K st
stp20ne06--.pdf 
STP20NE06 STP20NE06FP N - CHANNEL 60V - 0.07 - 20A - TO-220/TO-220FP STripFET POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP20NE06 60 V
8.31. Size:81K st
stp20ne10.pdf 
STP20NE10 N - CHANNEL 100V - 0.07 - 20A - TO-220 STripFET MOSFET TYPE VDSS RDS(on) ID STP20NE10 100 V
8.32. Size:1041K cn vbsemi
stp20ne06l.pdf 
STP20NE06L www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Max) Definition Surface Mount 0.024 at VGS = 10 V 50 60 66 nC Available in Tape and Reel 0.028 at VGS = 4.5 V 40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS D
8.33. Size:260K inchange semiconductor
stp20n10l.pdf 
isc N-Channel MOSFET Transistor STP20N10L FEATURES With TO-220 packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
8.34. Size:189K inchange semiconductor
stp20nm60.pdf 
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP20NM60 FEATURES Typical R (on)=0.25 DS Low input capacitance and gate charge Low gate input resistances 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Suitable for increasing power density of high voltage converters allowing system miniat
8.35. Size:205K inchange semiconductor
stp20n65m5.pdf 
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP20N65M5 FEATURES Typical R (on)=0.16 DS Excellent switching performance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V
8.36. Size:255K inchange semiconductor
stp20nm60fp.pdf 
isc N-Channel MOSFET Transistor STP20NM60FP FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL
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