STP26NM60N - описание и поиск аналогов

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 stb26nm60n stp26nm60n.pdf 

STB26NM60N, STP26NM60N N-channel 600 V, 0.135 typ., 20 A MDmesh II Power MOSFETs in D PAK and TO-220 packages Datasheet - production data Features Order code V R max I DS DS(on) D TAB STB26NM60N TAB 600 V 0.165 20 A STP26NM60N 100% avalanche tested 3 Low input capacitance and gate charge D2PAK TO-220 2 1 Low gate input resistance Application

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 stb26nm60n stf26nm60n stp26nm60n stw26nm60n.pdf 

STB26NM60N, STF26NM60N STP26NM60N, STW26NM60N N-channel 600 V, 0.135 , 20 A MDmesh II Power MOSFET D2PAK, TO-220FP, TO-220, TO-247 Features RDS(on) Type VDSS ID max 3 2 3 1 2 STB26NM60N 600 V

 ..3. Size:205K  inchange semiconductor
 stp26nm60n.pdf 

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP26NM60N FEATURES Low input capacitance and gate charge Low gate input resistances 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage

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 stb26nm60nd stf26nm60nd stp26nm60nd stw26nm60nd.pdf 

STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND N-channel 600 V, 0.145 typ., 21 A, FDmesh II Power MOSFETs in D PAK, TO-220FP, TO-220 and TO-247 packages Datasheet - production data Features TAB Order codes VDS @ Tjmax RDS(on) max ID 3 1 STB26NM60ND 2 3 D PAK 2 1 STF26NM60ND 650 V 0.175 21 A TO-220FP STP26NM60ND TAB STW26NM60ND 100% avalanche tested 3 3 2

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 stp26n60m2 stw26n60m2.pdf 

STP26N60M2, STW26N60M2 N-channel 600 V, 0.14 typ., 20 A MDmesh M2 Power MOSFETs in TO-220 and TO-247 packages Datasheet - production data Features TAB V @ R DS DS(on) Order code I P D TOT T max. Jmax STP26N60M2 650 V 0.165 20 A 169 W STW26N60M2 3 3 2 2 1 Extremely low gate charge 1 Excellent output capacitance (C ) profile OSS 100% avala

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 stp26n65dm2.pdf 

STP26N65DM2 Datasheet N-channel 650 V, 0.156 typ., 20 A, MDmesh DM2 Power MOSFET in a TO-220 package Features VDS RDS(on) max. ID PTOT Order code TAB STP26N65DM2 650 V 0.190 20 A 170 W Fast-recovery body diode 3 2 Extremely low gate charge and input capacitance 1 Low on-resistance TO-220 100% avalanche tested Extremely high dv/dt ruggedness D(2, T