STP30NF10. Аналоги и основные параметры
Наименование производителя: STP30NF10
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 115 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 35 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 40 ns
Cossⓘ - Выходная емкость: 180 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.045 Ohm
Тип корпуса: TO220
Аналог (замена) для STP30NF10
- подборⓘ MOSFET транзистора по параметрам
STP30NF10 даташит
..1. Size:502K st
stb30nf10 stp30nf10 stp30nf10fp.pdf 

STB30NF10 STP30NF10 - STP30NF10FP N-channel 100V - 0.038 - 35A - D2PAK/TO-220/TO-220FP Low gate charge STripFET II Power MOSFET General features Type VDSS RDS(on) ID STB30NF10 100V
..2. Size:502K st
stb30nf10t4 stb30nf10 stp30nf10 stp30nf10fp.pdf 

STB30NF10 STP30NF10 - STP30NF10FP N-channel 100V - 0.038 - 35A - D2PAK/TO-220/TO-220FP Low gate charge STripFET II Power MOSFET General features Type VDSS RDS(on) ID STB30NF10 100V
..3. Size:807K cn vbsemi
stp30nf10.pdf 

STP30NF10 www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.032 at VGS = 10 V 45 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 40 COMPLIANT D TO-220AB G S G D S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, u
..4. Size:267K inchange semiconductor
stp30nf10.pdf 

Isc N-Channel MOSFET Transistor STP30NF10 FEATURES Typical R (on)=0.038 DS Application oriented characterization Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High-efficiency DC-DC coverters Motor control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Dr
0.1. Size:713K cn vbsemi
stp30nf10fp.pdf 

STP30NF10FP www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.034 at VGS = 10 V 100 50a COMPLIANT Low Thermal Resistance Package 100 % Rg Tested APPLICATIONS Isolated DC/DC Converters D TO-220 FULLPAK G S S D G N-Channel MOSFET ABSOLUTE MA
0.2. Size:201K inchange semiconductor
stp30nf10fp.pdf 

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP30NF10FP FEATURES Typical R (on)=0.038 DS Application oriented characterization Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High-efficiency DC-DC coverters Motor control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL
7.1. Size:309K st
stp30nf20 stw30nf20.pdf 

STP30NF20 STW30NF20 N-channel 200V - 0.065 - 30A - TO-220/TO-247 Low gate charge STripFET Power MOSFET General features Type VDSS RDS(on) ID PTOT STP30NF20 200V 0.075 30A 125W STW30NF20 200V 0.075 30A 125W Gate charge minimized 3 3 2 2 1 1 100% avalanche tested TO-220 TO-247 Excellent figure of merit (RDS*Qg) Very good manufactuing repeability Ver
7.2. Size:386K st
stp30nf20 stb30nf20 stw30nf20.pdf 

STP30NF20 - STB30NF20 STW30NF20 N-channel 200V - 0.065 - 30A - TO-220/TO-247/D2PAK Low gate charge STripFET Power MOSFET Features Type VDSS RDS(on) ID PTOT STP30NF20 200V 0.075 30A 125W STW30NF20 200V 0.075 30A 125W 3 3 2 2 STB30NF20 200V 0.075 30A 125W 1 1 TO-247 3 Gate charge minimized TO-220 1 100% avalanche tested D PAK Excellent figure of me
7.3. Size:393K st
stp30nf20 stw30nf20 stb30nf20.pdf 

STP30NF20 - STB30NF20 STW30NF20 N-channel 200V - 0.065 - 30A - TO-220/TO-247/D2PAK Low gate charge STripFET Power MOSFET Features Type VDSS RDS(on) ID PTOT STP30NF20 200V 0.075 30A 125W STW30NF20 200V 0.075 30A 125W 3 3 2 2 STB30NF20 200V 0.075 30A 125W 1 1 TO-247 3 Gate charge minimized TO-220 1 100% avalanche tested D PAK Excellent figure of me
7.4. Size:747K cn vbsemi
stp30nf20.pdf 

STP30NF20 www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 175 C Junction Temperature RoHS 0.060 at VGS = 10 V COMPLIANT 40 New Low Thermal Resistance Package 200 95 0.070 at VGS = 6 V 38.7 Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-220AB Industrial D G
7.5. Size:206K inchange semiconductor
stp30nf20.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor STP30NF20 FEATURES With TO-220 packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS PFC stages LCD & PDP TV Power supply Switching applications ABSOLUTE MAXIMU
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