Справочник MOSFET. STP3NK100Z

 

STP3NK100Z MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: STP3NK100Z
   Маркировка: P3NK100Z
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 90 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1000 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 18 nC
   trⓘ - Время нарастания: 7.5 ns
   Cossⓘ - Выходная емкость: 53 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 6 Ohm
   Тип корпуса: TO220

 Аналог (замена) для STP3NK100Z

 

 

STP3NK100Z Datasheet (PDF)

 ..1. Size:417K  st
stf3nk100z std3nk100z stp3nk100z.pdf

STP3NK100Z
STP3NK100Z

STF3NK100Z - STD3NK100ZSTP3NK100ZN-channel 1000V - 5.4 - 2.5A - TO-220 - TO-220FP - DPAKZener-protected SuperMESH Power MOSFETFeaturesRDS(on) VDSS ID PTOTTypeMaxSTF3NK100Z 1000V

 ..2. Size:424K  st
stf3nk100z stp3nk100z std3nk100z.pdf

STP3NK100Z
STP3NK100Z

STF3NK100Z - STD3NK100ZSTP3NK100ZN-channel 1000V - 5.4 - 2.5A - TO-220 - TO-220FP - DPAKZener-protected SuperMESH Power MOSFETFeaturesRDS(on) VDSS ID PTOTTypeMaxSTF3NK100Z 1000V

 8.1. Size:932K  st
stb3nk60zt4 std3nk60z-1 std3nk60zt4 stp3nk60z stp3nk60zfp.pdf

STP3NK100Z
STP3NK100Z

STB3NK60ZT4, STD3NK60Z-1, STD3NK60ZT4STP3NK60Z, STP3NK60ZFPDatasheetN-channel 600 V, 3.2 typ., 2.4 A SuperMESH Power MOSFETs in DPAK, IPAK, DPAK, TO-220 and TO-220FP packagesFeaturesTABTAB3VDS RDS(on) max. IDOrder codes Package2311D2PAKIPAKTABSTB3NK60ZT4D2PAK2 3TAB1STD3NK60Z-1 IPAKDPAK600 V 3.6 2.4 ASTD3NK60ZT4 DPAK3STP3NK60Z TO

 8.2. Size:621K  st
stp3nk50z.pdf

STP3NK100Z
STP3NK100Z

STP3NK50ZN-channel 500 V, 2.8 typ., 2.3 A Zener-protected SuperMESH Power MOSFET in a TO-220 packageDatasheet - production dataFeatures Order code VDS RDS(on)max. ID PTOTTABSTP3NK50Z 500 V 3.3 2.3 A 45 W Extremely high dv/dt capability ESD improved capability321 100% avalanche testedTO-220 Gate charge minimized Zener-protectedApplicatio

 8.3. Size:630K  st
std3nk90z stp3nk90z stp3nk90zfp.pdf

STP3NK100Z
STP3NK100Z

PCBSTD3NK90Z, STP3NK90Z, STP3NK90ZFPN-channel 900 V, 4.1 typ., 3 A Zener-protected SuperMESH Power MOSFET in DPAK, TO-220 and TO-220FP packagesDatasheet - production dataFeaturesTABTAB2Order codes VDS RDS(on) ID PTOT 31STD3NK90ZT4390 W 2DPAK1STP3NK90Z 900 V 4.8 3 ATO-220STP3NK90ZFP 25 W Extremely high

 8.4. Size:882K  st
std3nk80z std3nk80z-1 stf3nk80z stp3nk80z.pdf

STP3NK100Z
STP3NK100Z

STD3NK80Z, STD3NK80Z-1STF3NK80Z, STP3NK80ZN-channel 800 V, 3.8 , 2.5 A, TO-220, TO-220FP, DPAK, IPAKZener-protected SuperMESH Power MOSFETFeaturesVDSS Type RDS(on) ID(@Tjmax)STP3NK80Z 800 V

 8.5. Size:755K  st
stp3nk60z.pdf

STP3NK100Z
STP3NK100Z

STP3NK60Z - STP3NK60ZFPSTB3NK60Z-STD3NK60Z-STD3NK60Z-1N-CHANNEL 600V - 3.3 - 2.4A TO-220/FP/D2PAK/DPAK/IPAKZener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP3NK60Z 600 V

 8.6. Size:438K  st
std3nk90zt4 stp3nk90zfp.pdf

STP3NK100Z
STP3NK100Z

STP3NK90Z - STP3NK90ZFPSTD3NK90Z - STD3NK90Z-1N-CHANNEL 900V - 4.1 - 3A TO-220/TO-220FP/DPAK/IPAKZener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP3NK90Z 900 V

 8.7. Size:757K  st
stp3nk60z-fp stb3nk60z std3nk60z std3nk60z-1.pdf

STP3NK100Z
STP3NK100Z

STP3NK60Z - STP3NK60ZFPSTB3NK60Z-STD3NK60Z-STD3NK60Z-1N-CHANNEL 600V - 3.3 - 2.4A TO-220/FP/D2PAK/DPAK/IPAKZener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP3NK60Z 600 V

 8.8. Size:613K  st
stp3nk90z stp3nk90zfp std3nk90z std3nk90z-1.pdf

STP3NK100Z
STP3NK100Z

STP3NK90Z - STP3NK90ZFPSTD3NK90Z - STD3NK90Z-1N-CHANNEL 900V - 4.1 - 3A TO-220/TO-220FP/DPAK/IPAKZener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP3NK90Z 900 V

 8.9. Size:757K  st
stp3nk60z stp3nk60zfp stb3nk60z std3nk60z std3nk60z-1.pdf

STP3NK100Z
STP3NK100Z

STP3NK60Z - STP3NK60ZFPSTB3NK60Z-STD3NK60Z-STD3NK60Z-1N-CHANNEL 600V - 3.3 - 2.4A TO-220/FP/D2PAK/DPAK/IPAKZener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP3NK60Z 600 V

 8.10. Size:1357K  st
std3nk80z-1 std3nk80zt4 stf3nk80z stp3nk80z.pdf

STP3NK100Z
STP3NK100Z

STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z N-channel 800 V, 3.8 typ., 2.5 A SuperMESH Power MOSFETs in IPAK, DPAK, TO-220FP, TO-220 packages Datasheet - production data Features Order code V R I DS DS(on) max. DSTD3NK80Z-1 800 V 4.5 2.5 A STD3NK80ZT4 800 V 4.5 2.5 A STF3NK80Z 800 V 4.5 2.5 A STP3NK80Z 800 V 4.5 2.5 A Extremely high dv/dt capabil

 8.11. Size:558K  st
std3nk90zt4 stp3nk90z stp3nk90zfp.pdf

STP3NK100Z
STP3NK100Z

STD3NK90ZT4, STP3NK90Z, STP3NK90ZFPDatasheetN-channel 900 V, 3.6 typ., 3 A SuperMESH Power MOSFETs in DPAK, TO-220 and TO-220FP packagesFeaturesTAB32VDS RDS(on) max. IDOrder code Package1DPAKSTD3NK90ZT4 DPAKTABSTP3NK90Z 900 V 4.8 3 A TO-220STP3NK90ZFP TO-220FP33 22 11TO-220 TO-220FP Extremely high dv/dt capability 100% avalanche tested

 8.12. Size:842K  cn vbsemi
stp3nk60zfp.pdf

STP3NK100Z
STP3NK100Z

STP3NK60ZFPwww.VBsemi.twPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 2.1RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19 Compliant to RoH

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