Аналог (замена) для STP6NK50Z

 

 

STP6NK50Z Datasheet (PDF)

1.1. stp6nk50z stf6nk50z std6nk50z.pdf Size:399K _st

STP6NK50Z - STF6NK50Z STD6NK50Z N-CHANNEL 500V - 0.93? - 5.6A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH� MOSFET TYPE VDSS RDS(on) ID Pw STP6NK50Z 500 V <1.2? 5.6 A 90 W STF6NK50Z 500 V <1.2? 5.6 A 25 W STD6NK50Z 500 V <1.2? 5.6 A 90 W TYPICAL RDS(on) = 0.93 ? 3 EXTREMELY HIGH dv/dt CAPABILITY 2 1 100% AVALANCHE TESTED GATE CHARGE MINIMIZED TO-220 TO-220FP VERY LOW INTRINS

4.1. stp6nk70z.pdf Size:422K _upd

STP6NK70Z STF6NK70Z - STW6NK70Z N-channel 700V - 1.5Ω - 5A - TO-220/TO-220FP Zener-protected SuperMESH™ Power MOSFET General features VDSS Type RDS(on) ID (@Tjmax) STP6NK70Z 700 V < 1.8 Ω 5 A STF6NK70Z 700 V <1.8 Ω 5 A(1) TO-220 TO-247 STW6NK70Z 700 V < 1.8 Ω 5 A 1. Limited only by maximum temperature allowed ■ Extremely high dv/dt capability 3 2 1 ■ Improved esd

4.2. stp6nk60zfp.pdf Size:445K _upd

STB6NK60Z - STB6NK60Z-1 STP6NK60ZFP - STP6NK60Z N-channel 600 V - 1 Ω - 6 A - TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH™ Power MOSFET Features Type VDSS RDS(on) ID PW STB6NK60Z 600 V < 1.2 Ω 6 A 110 W 3 3 2 1 1 STB6NK60Z-1 600 V < 1.2 Ω 6 A 110 W D²PAK TO-220 STP6NK60ZFP 600 V < 1.2 Ω 6 A 30 W STP6NK60Z 600 V < 1.2 Ω 6 A 110 W ■ Extremely high dv/dt c

 4.3. stp6nk90zfp.pdf Size:476K _upd

STP6NK90Z - STP6NK90ZFP STB6NK90Z - STW7NK90Z N-channel 900V - 1.56Ω - 5.8A - TO-220/TO-220FP/D2PAK/TO-247 Zener-protected SuperMESH™ Power MOSFET Features Type VDSS RDS(on) ID STP6NK90Z 900 V < 2 Ω 5.8 A 3 STP6NK90ZFP 900 V < 2 Ω 5.8 A 2 1 STB6NK90Z 900 V < 2 Ω 5.8 A TO-220FP TO-220 STW7NK90Z 900 V < 2 Ω 5.8 A ■ Extremely high dv/dt capability ■ 100% avalanche t

4.4. stb6nk60z stb6nk60z-1 stp6nk60zfp stp6nk60z.pdf Size:448K _st

STB6NK60Z - STB6NK60Z-1 STP6NK60ZFP - STP6NK60Z N-channel 600 V - 1 ? - 6 A - TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH� Power MOSFET Features Type VDSS RDS(on) ID PW STB6NK60Z 600 V < 1.2 ? 6 A 110 W 3 3 2 1 1 STB6NK60Z-1 600 V < 1.2 ? 6 A 110 W D?PAK TO-220 STP6NK60ZFP 600 V < 1.2 ? 6 A 30 W STP6NK60Z 600 V < 1.2 ? 6 A 110 W � Extremely high dv/dt capability 3 � 10

 4.5. stp6nk70z stf6nk70z stw6nk70z.pdf Size:421K _st

STP6NK70Z STF6NK70Z - STW6NK70Z N-channel 700V - 1.5? - 5A - TO-220/TO-220FP Zener-protected SuperMESH� Power MOSFET General features VDSS Type RDS(on) ID (@Tjmax) STP6NK70Z 700 V < 1.8 ? 5 A STF6NK70Z 700 V <1.8 ? 5 A(1) TO-220 TO-247 STW6NK70Z 700 V < 1.8 ? 5 A 1. Limited only by maximum temperature allowed � Extremely high dv/dt capability 3 2 1 � Improved esd capability TO-22

4.6. stp6nk90z stp6nk90zfp stb6nk90z stw7nk90z.pdf Size:481K _st

STP6NK90Z - STP6NK90ZFP STB6NK90Z - STW7NK90Z N-channel 900V - 1.56? - 5.8A - TO-220/TO-220FP/D2PAK/TO-247 Zener-protected SuperMESH� Power MOSFET Features Type VDSS RDS(on) ID STP6NK90Z 900 V < 2 ? 5.8 A 3 STP6NK90ZFP 900 V < 2 ? 5.8 A 2 1 STB6NK90Z 900 V < 2 ? 5.8 A TO-220FP TO-220 STW7NK90Z 900 V < 2 ? 5.8 A � Extremely high dv/dt capability � 100% avalanche tested 3 � Gate ch

4.7. stp6nk90z.pdf Size:588K _st

STP6NK90Z - STP6NK90ZFP STB6NK90Z N-CHANNEL 900V - 1.56? - 5.8A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH�Power MOSFET TYPE VDSS RDS(on) ID Pw STP6NK90Z 900 V <2? 5.8 A 140 W STP6NK90ZFP 900 V <2? 5.8 A 30 W STB6NK90Z 900 V <2? 5.8 A 140 W TYPICAL RDS(on) = 1.56 ? 3 2 EXTREMELY HIGH dv/dt CAPABILITY 1 100% AVALANCHE TESTED GATE CHARGE MINIMIZED TO-220 TO-220FP VERY LOW I

4.8. stp6nk60z.pdf Size:578K _st

STP6NK60Z - STP6NK60ZFP STB6NK60Z - STB6NK60Z-1 N-CHANNEL 600V - 1? - 6A TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH�Power MOSFET TYPE VDSS RDS(on) ID Pw STP6NK60Z 600 V < 1.2 ? 6 A 110 W STP6NK60ZFP 600 V < 1.2 ? 6 A 32 W STB6NK60Z 600 V < 1.2 ? 6 A 110 W STB6NK60Z-1 600 V < 1.2 ? 6 A 110 W 3 3 1 TYPICAL RDS(on) = 1 ? 2 1 EXTREMELY HIGH dv/dt CAPABILITY D2PAK TO-220 TO

4.9. stp6nk90z.pdf Size:207K _inchange_semiconductor

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP6NK90Z ·FEATURES ·Typical R (on)=1.56Ω DS ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Ideal for off-line powersupplies adaptors and PFC ·Lighting ·High current，high speed switching ·AB

4.10. stp6nk60z.pdf Size:208K _inchange_semiconductor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor STP6NK60Z DESCRIPTION ·Drain Current I = 6A@ T =25℃ D C ·Drain Source Voltage- : V = 600V(Min) DSS ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications in switching power supplies and

4.11. stp6nk90zfp.pdf Size:202K _inchange_semiconductor

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP6NK90ZFP ·FEATURES ·Typical R (on)=1.56Ω DS ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Ideal for off-line powersupplies adaptors and PFC ·Lighting ·High current，high speed switching ·

     

 

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