STP80NS04ZB. Аналоги и основные параметры
Наименование производителя: STP80NS04ZB
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 200 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 33 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
Cossⓘ - Выходная емкость: 1275 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm
Тип корпуса: TO220
Аналог (замена) для STP80NS04ZB
- подборⓘ MOSFET транзистора по параметрам
STP80NS04ZB даташит
..1. Size:115K st
stp80ns04zb.pdf 
STP80NS04ZB N-CHANNEL CLAMPED 7.5m - 80A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP80NS04ZB CLAMPED
4.1. Size:294K st
stp80ns04z.pdf 
STP80NS04Z N-CHANNEL CLAMPED 7.5m - 80A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE VDSS RDS(on) ID STP80NS04Z CLAMPED
8.2. Size:232K st
stp80nf10fp.pdf 
STP80NF10FP N-channel 100V - 0.012 - 38A - TO-220FP Low gate charge STripFET II Power MOSFET General features Type VDSS RDS(on) ID(1) STP80NF10FP 100V
8.3. Size:353K st
stp80nf55.pdf 
STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STB80NF55-08/-1 55 V
8.4. Size:77K st
stp80n03l-06.pdf 
STP80N03L-06 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR TENTATIVE DATA TYPE V R I DSS DS(on) D STP80N03L-06 30 V
8.6. Size:579K st
stb80nf10 stp80nf10.pdf 
STB80NF10 STP80NF10 N-channel 100 V, 0.012 , 80 A, TO-220, D2PAK low gate charge STripFET II Power MOSFET Features RDS(on) Type VDSS ID max STP80NF10 100 V
8.7. Size:440K st
stp80nf70.pdf 
STP80NF70 N-channel 68 V, 0.0082 , 98 A, TO-220 STripFET II Power MOSFET Features RDS(on) Type VDSS ID max STP80NF70 68 V
8.8. Size:377K st
stb80nf75l stp80nf75l.pdf 
STP80NF75L STB80NF75L STB80NF75L-1 N-CHANNEL 75V - 0.008 - 80A TO-220/D2PAK/I2PAK STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STP80NF75L 75 V
8.9. Size:339K st
stp80nf55l-08.pdf 
STP80NF55L-08 STB80NF55L-08 - STB80NF55L-08-1 N-CHANNEL 55V - 0.0065 - 80A - TO-220/D2PAK/I2PAK STripFET II POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP80NF55L-08 55 V 0.008 80 A STB80NF55L-08 55 V 0.008 80 A STB80NF55L-08-1 55 V 0.008 80 A 3 3 1 TYPICAL RDS(on) = 0.0065 2 1 D2PAK LOW THRESHOLD DRIVE TO-220 LOGIC LEVEL DEVICE 3 2 1 I2PAK DESCR
8.10. Size:360K st
stp80nf03l-04.pdf 
STP80NF03L-04 STB80NF03L-04 STB80NF03L-04-1 N-CHANNEL 30V - 0.0035 - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STB80NF03L-04/-1 30 V
8.11. Size:209K st
stp80nf03l-04 stp80nf03l.pdf 
STP80NF03L N-CHANNEL 30V - 0.004 - 80ATO-220 STripFET II MOSFET TYPE VDSS RDS(on) ID STP80NF03L 30 V
8.12. Size:362K st
stb80nf55-08t4 stp80nf55-08 stw80nf55-08.pdf 
STB80NF55-08T4 STP80NF55-08, STW80NF55-08 N-channel 55 V, 0.0065 , 80 A, TO-220, D2PAK, TO-247 STripFET Power MOSFET Features RDS(on) Type VDSS ID max 3 STB80NF55-08T4 55 V
8.13. Size:58K st
stp80ne03l.pdf 
STP80NE03L-06 N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(o n) ID STP80NE03L-06 30 V
8.14. Size:308K st
stp80nf06 stb80nf06 stw80nf06.pdf 
STP80NF06 - STB80NF06 STW80NF06 N-channel 60V - 0.0065 - 80A TO-220/D2PAK/TO-247 STripFET II Power MOSFET Features Type VDSS RDS(on) ID STB80NF06 60V
8.15. Size:368K st
stp80nf75l.pdf 
STP80NF75L STB80NF75L STB80NF75L-1 N-CHANNEL 75V - 0.008 - 80A TO-220/D2PAK/I2PAK STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STP80NF75L 75 V
8.16. Size:653K st
stp80n70f4.pdf 
STP80N70F4 N-channel 68 V, 8.2 m typ., 85 A STripFET DeepGATE Power MOSFET in TO-220 package Datasheet production data Features Order code VDSS RDS(on) max ID STP80N70F4 68 V
8.17. Size:932K st
stb80n20m5 stp80n20m5.pdf 
STB80N20M5 STP80N20M5 N-channel 200 V, 0.019 , 61 A, TO-220, D2PAK MDmesh V Power MOSFET Features VDSS @ RDS(on) Type ID TJmax max STB80N20M5 61 A 200 V
8.18. Size:456K st
stp80n6f6.pdf 
STP80N6F6 Automotive-grade N-channel 60 V, 4.4 m typ., 80 A STripFET VI DeepGATE Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on) max. ID TAB STP80N6F6 60 V 5 m 80 A(1) 1. Current limited by package 3 Designed for automotive applications and 2 1 AEC-Q101 qualified Low gate charge TO-220 Very low on-resistance
8.19. Size:334K st
stp80nf10-fp.pdf 
STP80NF10 STP80NF10FP N-CHANNEL 100V - 0.012 - 80A TO-220/TO-220FP LOW GATE CHARGE STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STP80NF10 100 V
8.20. Size:1361K st
std80n10f7 stf80n10f7 sth80n10f7-2 stp80n10f7.pdf 
STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7 N-channel 100 V, 0.008 typ., 80 A STripFET VII DeepGATE Power MOSFETs in DPAK, TO-220FP, H2PAK-2 and TO-220 Datasheet - production data Features TAB VDS @ RDS(on) 3 Order codes ID PTOT TJmax max 1 DPAK 3 STD80N10F7 0.01 70 A 85 W 2 1 TO-220FP STF80N10F7 0.01 40 A 30 W 100 V TAB TAB STH80N10F7-2 0.0095 80 A
8.21. Size:185K st
stp80ne03l-06.pdf 
STP80NE03L-06 N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZE " POWER MOSFET TYPE VDSS RDS(on) ID STP80NE03L-06 30 V
8.22. Size:267K st
stp80nf12.pdf 
STP80NF12 N-channel 120 V, 0.013 , 80 A, TO-220 STripFET II Power MOSFET Features RDS(on) Type VDSS ID max STP80NF12 120 V
8.23. Size:773K st
stp80n70f6.pdf 
STP80N70F6 N-channel 68 V, 0.0063 typ., 96 A STripFET VI DeepGATE Power MOSFET in TO-220 package Datasheet - production data Features TAB VDSS Order code RDS(on) max. ID PTOT max.
8.24. Size:77K st
stp80n06-10.pdf 
STP80N06-10 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(on) D STP80N06-10 60 V
8.25. Size:437K st
stb80nf55-06-1 stb80nf55-06t4 stp80nf55-06fp.pdf 
STB80NF55-06 - STB80NF55-06-1 STP80NF55-06 - STP80NF55-06FP N-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAK STripFET II Power MOSFET General features Type VDSS RDS(on) ID STB80NF55-06 55V
8.26. Size:235K st
stp80ne06-10.pdf 
STP80NE06-10 N-CHANNEL 60V - 0.0085 - 80A TO-220 "SINGLE FEATURE SIZE " MOSFET Table 1. General Features Figure 1. Package Type VDSS RDS(on) ID STP80NE06-10 60 V
8.27. Size:114K st
stp80n05-09.pdf 
STP80N05-09 N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP80N05-09 50 V
8.28. Size:195K st
stp80nf55l-08 stb80nf55l-08 stb80nf55l-08-1.pdf 
STP80NF55L-08 STB80NF55L-08 - STB80NF55L-08-1 N-CHANNEL 55V - 0.0065 - 80A - TO-220/D2PAK/I2PAK STripFET II POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP80NF55L-08 55 V 0.008 80 A STB80NF55L-08 55 V 0.008 80 A STB80NF55L-08-1 55 V 0.008 80 A 3 3 1 TYPICAL RDS(on) = 0.0065 2 1 D2PAK LOW THRESHOLD DRIVE TO-220 LOGIC LEVEL DEVICE 3 2 1 I2PAK DESC
8.29. Size:36K st
stp80nf55-07.pdf 
STP80NF55-07 N - CHANNEL 55V - 0.0055 - 80A - TO-220 STripFET POWER MOSFET TARGET DATA TYPE VDSS RDS(on) ID STP80NF55-07 55 V
8.30. Size:206K inchange semiconductor
stp80nf55-06.pdf 
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP80NF55-06 FEATURES Typical R (on)=0.005 DS Excellent switching performance Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Solenoid and relay drivers DC-DC converters Automotive environment ABSOLUTE MAXIMUM RATINGS(T
8.31. Size:261K inchange semiconductor
stp80nf12.pdf 
isc N-Channel MOSFET Transistor STP80NF12 FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 120V(Min) DSS Static Drain-Source On-Resistance R = 18m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. A
8.32. Size:206K inchange semiconductor
stp80n10f7.pdf 
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP80N10F7 FEATURES Extremely low gate charge Ultra low on-resistance Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-
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