DTO-254GSAPT4030CNR 400V 15.0A 0.300TMPOWER MOS IV Avalanche RatedN - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS Faster Switching 100% Avalanche Tested Popular TO-254 Package Low Gate Charge Similar to the 2N7227, JX2N7227 and JV2N7227MAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT4030CNR UNITVDSS Drai

DTO-254GSAPT4030CNR 400V 15.0A 0.300TMPOWER MOS IV Avalanche RatedN - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS Faster Switching 100% Avalanche Tested Popular TO-254 Package Low Gate Charge Similar to the 2N7227, JX2N7227 and JV2N7227MAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT4030CNR UNITVDSS Drai

DGAPT40M42JN 400V 86A 0.042S"UL Recognized" File No. E145592 (S)ISOTOPPOWER MOS IVSINGLE DIE ISOTOP PACKAGEN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APTSymbol Parameter 40M42JN UNITVDSS Drain-Source Voltage400 VoltsID Continuous Drain Current @ TC = 25C86AmpsIDM, lLM Pulse

APT4012BVFRAPT4012SVFR400V 37A 0.120BVFRFREDFETPOWER MOS VD3PAKTO-247Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,SVFRincreases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.

APT40M70LVR400V 57A 0.070POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.. Faster Switching 100% Avalanche Tested D Lowe

DTO-247GAPT4016BN 400V 31.0A 0.16SAPT4018BN 400V 29.0A 0.18POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 4016BN 4018BN UNITVDSS Drain-Source Voltage400 400 VoltsID Continuous Drain Current @ TC = 25C31 29AmpsIDM Pulsed Drain Current 1124 116

TYPICAL PERFORMANCE CURVES APT40GP90JAPT40GP90J900V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,"UL Recognized"high voltage switching applications and has been optimized for high frequencyISOTOPswitchmode power supplies. Low Conduction Loss SSOA Rat

TYPICAL PERFORMANCE CURVESAPT40GP60B2DF2APT40GP60B2DF2600VPOWER MOS 7 IGBTTMT-MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGswitchmode power supplies.CE Low Conduction Loss 100 k

TYPICAL PERFORMANCE CURVES APT40GP90B2DQ2(G) 900V APT40GP90B2DQ2 APT40GP90B2DQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTT-MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high f

TYPICAL PERFORMANCE CURVES APT40GP90BAPT40GP90B900V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss SSOA RatedC

TYPICAL PERFORMANCE CURVES APT40GP90BAPT40GP90B900V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss SSOA RatedC

APT4014BVR400V 28A 0.140POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L

APT40GP60BAPT40GP60S600VPOWER MOS 7 IGBTTO-247D3PAKThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyCG G Eswitchmode power supplies.CEC Low Conduction Loss 100 kHz operation @ 400V, 4

DTO-247GAPT4016BN 400V 31.0A 0.16SAPT4018BN 400V 29.0A 0.18POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 4016BN 4018BN UNITVDSS Drain-Source Voltage400 400 VoltsID Continuous Drain Current @ TC = 25C31 29AmpsIDM Pulsed Drain Current 1124 116

TYPICAL PERFORMANCE CURVESAPT40GP90B2DF2APT40GP90B2DF2900V POWER MOS 7 IGBTT-MaxTMThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCE Low Conduction Loss SSOA R

APT40GF120JRD1200V 60AFast IGBT & FREDThe Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superiorruggedness and fast switching speed."UL Recognized"ISOTOP Low Forward Voltage Drop High Freq. Switching to 20KHzC L

APT40M70JVR400V 53A 0.070POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche

APT4018HVR400V 22A 0.180POWER MOS VTO-258Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

APT4016BVR400V 27A 0.160POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

APT40M35JVR400V 93A 0.035POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche

APT40GP60J600VPOWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies."UL Recognized"C Low Conduction Loss 100 kHz operation @ 400V, 25A ISOTOP Low Gate

TYPICAL PERFORMANCE CURVES APT40GP90JDQ2 900V APT40GP90JDQ2POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies."UL Recognized"ISOTOP file # E145592 Low

DGAPT40M75JN 400V 56.0A 0.075SAPT40M90JN 400V 51.0A 0.090ISOTOP"UL Recognized" File No. E145592 (S)POWER MOS IVSINGLE DIE ISOTOP PACKAGEN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 40M75JN 40M90JN UNITVDSS Drain-Source Voltage400 400 VoltsID Continuous Dr

APT4014BVFRAPT4014SVFR400V 28A 0.140BVFRFREDFETPOWER MOS VD3PAKTO-247Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,SVFRincreases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.

APT40GP60BAPT40GP60S600VPOWER MOS 7 IGBTTO-247D3PAKThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyCG G Eswitchmode power supplies.CEC Low Conduction Loss 100 kHz operation @ 400V, 4

APT40GP60BAPT40GP60S600VPOWER MOS 7 IGBTTO-247D3PAKThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyCG G Eswitchmode power supplies.CEC Low Conduction Loss 100 kHz operation @ 400V, 4

TYPICAL PERFORMANCE CURVES APT40GP90JDF2APT40GP90JDF2900V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,"UL Recognized"high voltage switching applications and has been optimized for high frequencyISOTOPswitchmode power supplies. Low Conduction Loss SS

400V 23A 0.20APT4020BVFR APT4020SVFRAPT4020BVFRG* APT4020SVFRG**G Denotes RoHS Compliant, Pb Free Terminal Finish.BVFRFREDFETPOWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement D3PAKmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS VSVF

APT40M82WVR400V 44A 0.082POWER MOS VTO-267Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

DTO-247GAPT4020BN 400V 26.0A 0.20SAPT4025BN 400V 23.0A 0.25POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 4020BN 4025BN UNITVDSS Drain-Source Voltage400 400 VoltsID Continuous Drain Current @ TC = 25C26 23AmpsIDM Pulsed Drain Current 1104 92

APT40M70JVFR400V 53A 0.070 POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V"UL Recognized"also achieves faster switching speeds through optimized gate layout.ISOTOP Faster

TYPICAL PERFORMANCE CURVES APT40GP60JDQ2 600V APT40GP60JDQ2POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies."UL Recongnized"ISOTOP file # 145592 Low

APT4020BVR400V 23A 0.200POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

TYPICAL PERFORMANCE CURVESAPT40GP60JDF2APT40GP60JDF2600VPOWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies."UL Recognized"ISOTOPfi Low Conduction Loss

DTO-247GAPT4020BN 400V 26.0A 0.20SAPT4025BN 400V 23.0A 0.25POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 4020BN 4025BN UNITVDSS Drain-Source Voltage400 400 VoltsID Continuous Drain Current @ TC = 25C26 23AmpsIDM Pulsed Drain Current 1104 92

APT40M35PVR400V 89A 0.035POWER MOS VP-PackPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V alsoachieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

400V 57A 0.070APT40M70B2VFR APT40M70LVFRAPT40M70B2VFRG* APT40M40LVFRG**G Denotes RoHS Compliant, Pb Free Terminal Finish.B2VFR POWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance

APT4012BVR400V 37A 0.120POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L

APT40GT60BR600V 80AThunderbolt IGBTTO-247The Thunderbolt IGBT is a new generation of high voltage power IGBTs.Using Non-Punch Through Technology the Thunderbolt IGBT offers superiorruggedness and ultrafast switching speed.G Low Forward Voltage Drop High Freq. Switching to 150KHzCCE Low Tail Current Ultra Low Leakage Current Avalanche Rated

APT4015AVR400V 25.5A 0.150POWER MOS VTO-3Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

APT4014HVR400V 28A 0.140POWER MOS VTO-258Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

400V 27A 0.16APT4016BVFR APT4016SVFRAPT4016BVFRG* APT4016SVFRG**G Denotes RoHS Compliant, Pb Free Terminal Finish.BVFRFREDFETPOWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement D3PAKmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS VSVF

TYPICAL PERFORMANCE CURVES APT40GP60B2DQ2(G) 600V APT40GP60B2DQ2 APT40GP60B2DQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTTMT-MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high

APT40GF120JRDQ2TYPICAL PERFORMANCE CURVES APT40GF120JRDQ2 1200V APT40GF120JRDQ2FAST IGBT & FREDThe Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an Microsemi free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed."UL Recognized"ISOTO

APT40GR120B_S APT40GR120B APT40GR120S 1200V, 40A, VCE(on)= 2.5V Typical .Ultra Fast NPT - IGBT(B)The Ultra Fast NPT - IGBT is a new generation of high voltage power IGBTs. D3PA KUsing Non-Punch-Through Technology, the Ultra Fast NPT-IGBT offers superior ruggedness and ultrafast switching speed.(S)CG EFeaturesGC Low Saturation Voltage Short Circuit

FINAL DATA SHEET 600V 40A 0.110 APT40N60B2CF APT40N60LCF APT40N60B2CFG* APT40N60LCFG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction FREDFET COOLMOSTMPower SemiconductorsT-MaxTO-264 Ultra Low RDS(ON) Intrinsic Fast-Recovery Body Diode Low Miller Capacitance Extreme Low Reverse Recovery Charge Ultra Low Gate Charge, Qg Ideal

APT40GR120B_S APT40GR120B APT40GR120S 1200V, 40A, VCE(on)= 2.5V Typical .Ultra Fast NPT - IGBT(B)The Ultra Fast NPT - IGBT is a new generation of high voltage power IGBTs. D3PA KUsing Non-Punch-Through Technology, the Ultra Fast NPT-IGBT offers superior ruggedness and ultrafast switching speed.(S)CG EFeaturesGC Low Saturation Voltage Short Circuit

APT40GT60BR600V, 80A, VCE(ON) = 2.1V TypicalThunderbolt IGBTThe Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT offers superior rugged-ness and ultrafast switching speed.Features RBSOA and SCSOA Rated Low Forward Voltage Drop High Frequency Switching to 150KHz Low Tail Current G

APT40M35JVFR400V 93A 0.035 POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V"UL Recognized"also achieves faster switching speeds through optimized gate layout.ISOTOP Faster

isc N-Channel MOSFET Transistor APT4020BVFRFEATURESDrain Current I =23A@ T =25D CDrain Source Voltage-: V =400V(Min)DSSStatic Drain-Source On-Resistance: R =0.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

isc N-Channel MOSFET Transistor APT4014BVFRFEATURESDrain Current I = 28A@ T =25D CDrain Source Voltage-: V =400V(Min)DSSStatic Drain-Source On-Resistance: R =0.14(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur