APT40M42JN MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: APT40M42JN
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 690 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 400 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 86 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 41 ns
Cossⓘ - Выходная емкость: 2600 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.042 Ohm
Тип корпуса: SOT227
Аналог (замена) для APT40M42JN
APT40M42JN Datasheet (PDF)
apt40m42jn.pdf
DGAPT40M42JN 400V 86A 0.042S"UL Recognized" File No. E145592 (S)ISOTOPPOWER MOS IVSINGLE DIE ISOTOP PACKAGEN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APTSymbol Parameter 40M42JN UNITVDSS Drain-Source Voltage400 VoltsID Continuous Drain Current @ TC = 25C86AmpsIDM, lLM Pulse
apt40m70lvr.pdf
APT40M70LVR400V 57A 0.070POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.. Faster Switching 100% Avalanche Tested D Lowe
apt40m70jvr.pdf
APT40M70JVR400V 53A 0.070POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche
apt40m35jvr.pdf
APT40M35JVR400V 93A 0.035POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche
apt40m75jn.pdf
DGAPT40M75JN 400V 56.0A 0.075SAPT40M90JN 400V 51.0A 0.090ISOTOP"UL Recognized" File No. E145592 (S)POWER MOS IVSINGLE DIE ISOTOP PACKAGEN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 40M75JN 40M90JN UNITVDSS Drain-Source Voltage400 400 VoltsID Continuous Dr
apt40m82wvr.pdf
APT40M82WVR400V 44A 0.082POWER MOS VTO-267Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower
apt40m70jvfr.pdf
APT40M70JVFR400V 53A 0.070 POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V"UL Recognized"also achieves faster switching speeds through optimized gate layout.ISOTOP Faster
apt40m35pvr.pdf
APT40M35PVR400V 89A 0.035POWER MOS VP-PackPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V alsoachieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower
apt40m70b2vfrg apt40m70lvfrg.pdf
400V 57A 0.070APT40M70B2VFR APT40M70LVFRAPT40M70B2VFRG* APT40M40LVFRG**G Denotes RoHS Compliant, Pb Free Terminal Finish.B2VFR POWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance
apt40m35jvfr.pdf
APT40M35JVFR400V 93A 0.035 POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V"UL Recognized"also achieves faster switching speeds through optimized gate layout.ISOTOP Faster
Другие MOSFET... APT4016BN , APT4016BVR , APT4018HVR , APT4020BN , APT4020BVR , APT4030CNR , APT40M35JVR , APT40M35PVR , IRF9540 , APT40M70JVR , APT40M70LVR , APT40M75JN , APT40M82WVR , APT5010B2VFR , APT5010B2VR , APT5010JN , APT5010JVFR .
Список транзисторов
Обновления
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