APT40M70JVR - параметры транзистора MOSFET, его аналоги, datasheet

APT40M70JVR Datasheet (PDF)

..1. Size:69K apt
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APT40M70JVR400V 53A 0.070POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche

4.1. Size:70K apt
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APT40M70JVFR400V 53A 0.070 POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V"UL Recognized"also achieves faster switching speeds through optimized gate layout.ISOTOP Faster

6.1. Size:62K apt
apt40m70lvr.pdf pdf_icon

APT40M70LVR400V 57A 0.070POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.. Faster Switching 100% Avalanche Tested D Lowe

6.2. Size:148K apt
apt40m70b2vfrg apt40m70lvfrg.pdf pdf_icon

400V 57A 0.070APT40M70B2VFR APT40M70LVFRAPT40M70B2VFRG* APT40M40LVFRG**G Denotes RoHS Compliant, Pb Free Terminal Finish.B2VFR POWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance

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