BSC011N03LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized for high performance Buck converter RDS(on),max 1.1 mW Very low on-resistance R @ V =4.5 VDS(on) GSID 100 A 100% avalanche testedQOSS 40 nC Superior thermal resistanceQG(0V..10V) 72 nC N-channel Qualified according to JEDEC1) for target applicationsPG-TDSON-8

BSC011N03LSTMOSFETTDSON-8 FL (enlarged source interconnection)OptiMOSTM Power-MOSFET, 30 V876Features5 Optimized for high performance Buck converter 175 C rated1 52 6 Very low on-resistance R @ V =4.5 VDS(on) GS 734 8 100% avalanche tested Superior thermal resistance4 N-channel3 Qualified according to JEDEC1) for target applicat

BSC011N03LSIOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized for high performance SMPSRDS(on),max 1.1 mW Integrated monolithic Schottky-like diodeID 100 A Very low on-resistance R @ V =4.5 VDS(on) GSQOSS 45 nC 100% avalanche testedQG(0V..10V) 68 nC Superior thermal resistance N-channel Qualified according to JEDEC1) for

BSC014N06NSSCMOSFETPG-WSON-8-2OptiMOSTM Power-Transistor, 60 VFeatures Double side cooled package-with lowest Junction-top thermal resistancetab 175C rated Optimized for high performance SMPS, e.g. sync. rec.56 100% avalanche tested78 Superior thermal resistance43 N-channel21 Pb-free lead plating; RoHS compliant Halogen-free ac

TypeBSC014N06NSOptiMOSTM Power-TransistorFeaturesProduct Summary Optimized for high performance SMPS, e.g. sync. rec.VDS 60 V 100% avalanche testedRDS(on),max 1.45 mW Superior thermal resistanceID 100 A N-channelQOSS nC 100 Qualified according to JEDEC1) for target applicationsQG(0V..10V) nC 89 Pb-free lead plating; RoHS compliantPG-

% ! % D #:A0

BSC016N04LS GOptiMOS3 Power-TransistorProduct SummaryV 40 VFeatures DSR 1.6m Fast switching MOSFET for SMPS DS(on),maxI 100 A Optimized technology for DC/DC converters D Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

BSC010N04LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 40 V Optimized for sychronous rectificationRDS(on),max 1.0 mW Very low on-resistance RDS(on)ID 100 A 100% avalanche testedQoss 84 nC Superior thermal resistanceQg(0V..10V) 95 nC N-channel, logic levelPG-TDSON-8 FL Qualified according to JEDEC1) for target applications (enlarg

BSC014N04LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 40 V Optimized for synchronous rectificationRDS(on),max 1.4 mW Very low on-state resistance RDS(on)ID 100 A 100% avalanche testedQoss 54 nC Superior thermal resistanceQg(0V..10V) 61 nC N-channel, logic levelPG-TDSON-8 FL Qualified according to JEDEC1) for target applications(

BSC010N04LSTMOSFETTDSON-8 FL (enlarged source interconnection)OptiMOSTM Power-MOSFET, 40 V876Features5 Optimized for sychronous rectification 175 C rated1 52 6 Very low on-resistance RDS(on) 734 8 100% avalanche tested Superior thermal resistance4 N-channel, logic level3 Qualified according to JEDEC1) for target applications 2

BSC019N04LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 40 V Optimized for high performance SMPS, e.g. sync. rec.RDS(on),max 1.9 mW Very low on-resistance R @ V =4.5 VDS(on) GSID 100 A 100% avalanche testedQOSS 37 nC Superior thermal resistanceQG(0V..10V) 41 nC N-channel Qualified according to JEDEC1) for target applicationsPG-TDSON-

BSC014N04LSIOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 40 V Optimized for synchronous rectificationRDS(on),max 1.45 mW Integrated monolithic Schottky-like diodeA ID 100 Very low on-resistance RDS(on)QOSS 53 nC 100% avalanche tested55 nC QG(0V..10V) N-channel, logic levelPG-TDSON-8 FL Qualified according to JEDEC1) for target a

BSC010N04LS6MOSFETTDSON-8 FL (enlarged source interconnection)OptiMOSTM 6 Power-Transistor, 40 V876Features5 Optimized for synchronous application Very low on-resistance RDS(on)1 52 6 100% avalanche tested734 8 Superior thermal resistance N-channel4 Pb-free lead plating; RoHS compliant3 Halogen-free according to IEC61249-2-21 2

BSC010N04LSIOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 40 V Optimized for synchronous rectificationRDS(on),max 1.05 mW Integrated monolithic Schottky-like diodeA ID 100 Very low on-resistance RDS(on)QOSS 83 nC 100% avalanche tested87 nC QG(0V..10V) N-channel, channel Qualified according to JEDEC1) for target applicationsPG-TDSO

BSC018N04LS GOptiMOS3 Power-Transistor Product SummaryV 40 VFeatures DSR 1.8m Fast switching MOSFET for SMPS DS(on),maxI 100 A Optimized technology for DC/DC converters D Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x RDS(on) product (FOM) Very low on-resistance RDS(on) Superi

BSC016N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 1.6mDS(on),max Optimized technology for DC/DC convertersI 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

BSC012N06NSMOSFETTSON-8-3OptiMOSTM5 Power-Transistor, 60 V8756 6Features 758 Optimized for synchronous rectificationPin 1 100% avalanche tested2433 Superior thermal resistance4 21 N-channel 175C rated Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Higher solder joint reliability due to enla

& " & E $;B1= !#& '$=;0@/? &@99-=DFeaturesD Q 2CD CG:D49:?8 ') - . 7@B -'*- 1 m D n) m xQ ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BC 1 D1)Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?C G D ON Q ( 492??6=Q &@8:4 =6F6=Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n)Q /6BI =@G @? B6C:CD2?46 D n)Q -EA6B:@B D96B>2= B6C:CD2?46Q F2=2?496 B2D65Q *3 7B66 A=2

% ! % D #:A0

BSC016N06NSTMOSFETTDSON-8 FL (enlarged source interconnection)OptiMOSTM Power-MOSFET, 60 V876Features5 Optimized for synchronous rectification 175 C rated1 52 6 100% avalanche tested734 8 Superior thermal resistance N-channel4 Qualified according to JEDEC1) for target applications3 Pb-free lead plating; RoHS compliant 21

% ! % # %?88, G D ON S 07DK >AI A@ D7E;EF3@57 0D n) G S J57>>7@F 93F7 5:3D97 J BDA6G5F !* ( D n)1)S , G3>;8;76 355AD6;@9 FA % 8AD F3D97F 3BB>;53F;A@ES .GB7D;AD

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM Power-MOSFET, 25 VBSC010NE2LSIData SheetRev. 2.3FinalPower Management & MultimarketOptiMOSTM Power-MOSFET, 25 VBSC010NE2LSISuperSO81 Description5867Features7685 Optimized for high performance Buck converter Monolithic integrated Schottky like diode Very low on-resi

BSC014NE2LSIOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 25 V Optimized for high performance Buck converter RDS(on),max 1.4 mW Monolithic integrated Schottky like diodeA ID 100 Very low on-resistance R @ V =4.5 VDS(on) GSQOSS 25 nC 100% avalanche tested39 nC QG(0V..10V) N-channel Qualified according to JEDEC1) for target applicatio

& " & E $;B1= !#& '$=;0@/? &@99-=yFeaturesD Q 2CD CG:D49:?8 ') - . 7@B -'*- 1 4 m D n) m xQ ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BC 1 D1)Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?C G D ON Q ( 492??6=Q &@8:4 =6F6=Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n)Q /6BI =@G @? B6C:CD2?46 D n)Q -EA6B:@B D96B>2= B6C:CD2?46Q F2=2?496 B2D65Q *3 7B66 A=2

BSC010NE2LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 25 V Optimized for high performance Buck converter RDS(on),max 1.0 mW Very low on-resistance R @ V =4.5 VDS(on) GSID 100 A 100% avalanche testedQOSS 33 nC Superior thermal resistanceQG(0V..10V) 64 nC N-channel Qualified according to JEDEC1) for target applicationsPG-TDSON-8

BSC016N06NSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 60 V Optimized for synchronous rectificationRDS(on),max 1.6 mW 100% avalanche testedID 100 A Superior thermal resistanceQOSS 81 nC N-channelQG(0V..10V) 71 nC Qualified according to JEDEC1) for target applicationsPG-TDSON-8 FL Pb-free lead plating; RoHS compliantenlarged source

n-Channel Power MOSFETOptiMOSBSC018NE2LS Data Sheet2.1, 2011-09-20Final Industrial & MultimarketOptiMOS Power-MOSFETBSC018NE2LS1 DescriptionOptiMOS25V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate- and output charges togetherwith lowest on state resistance in small footprint packages make OptiMO

BSC017N04NS GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 1.7mDS(on),max Optimized technology for DC/DC convertersI 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel Normal level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on

BSC019N04NS GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 1.9mDS(on),max Optimized technology for DC/DC convertersI 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Normal level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

BSC016N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 1.6mDS(on),max Optimized technology for DC/DC convertersI 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

BSC014N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 1.4mDS(on),max Optimized technology for DC/DC convertersI 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel Logic level; Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

BSC014N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 1.4mDS(on),max Optimized technology for DC/DC convertersI 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel Logic level; Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

% ! % D %0 G D ON S 07DK >AI A@ D7E;EF3@57 0D n) G S J57>>7@F 93F7 5:3D97 J BDA6G5F !* ( D n)1)S , G3>;8;76 355AD6;@9 FA % 8AD F3D97F 3BB>;53F;A@ES .GB

BSC018NE2LSIOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 25 V Optimized for high performance Buck converter RDS(on),max 1.8 mW Monolithic integrated Schottky like diodeA ID 100 Very low on-resistance R @ V =4.5 VDS(on) GSQOSS 23 nC 100% avalanche tested36 nC QG(0V..10V) N-channel Qualified according to JEDEC1) for target applicatio

BSC016N03MS GProduct SummaryOptiMOS3 M-Series Power-MOSFETV 30 VDSFeaturesR V =10 V 1.6mDS(on),max GS Optimized for 5V driver application (Notebook, VGA, POL)V =4.5 V 2GS Low FOMSW for High Frequency SMPSI 100 AD 100% avalanche tested N-channelPG-TDSON-8 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product

BSC014N03MS GOptiMOS3 M-Series Power-MOSFETProduct SummaryFeaturesV 30 VDS Optimized for 5V driver application (Notebook, VGA, POL)R V =10 V 1.4mDS(on),max GS Low FOMSW for High Frequency SMPSV =4.5 V 1.75GS 100% avalanche testedI 100 AD N-channelPG-TDSON-8 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R prod

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 25 VBSC015NE2LS5IData SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 25 VBSC015NE2LS5ISuperSO81 Description5867Features7685 Optimized for high performance buck converters Monolithic integrated Schottky-like diode Very low on

BSC019N04NSwww.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0025 at VGS = 10 V 120 TrenchFET Power MOSFET40 38 nC0.0028 at VGS = 6.5 V 105 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Synchronous Rectification Secondary Side DC/DCD