BSC028N06LS3G - описание и поиск аналогов

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Type BSC028N06NS OptiMOSTM Power-Transistor Product Summary Features VDS 60 V Optimized for high performance SMPS, e.g. sync. rec. RDS(on),max 2.8 mW 100% avalanche tested ID 100 A Superior thermal resistance Qoss 43 nC N-channel QG(0..10V) 37 nC Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Haloge

BSC020N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 2 m DS(on),max Optimized technology for DC/DC converters I 100 A D Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superio

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-Transistor, 80 V BSC026N08NS5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-Transistor, 80 V BSC026N08NS5 SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for Synchronous Rectification in server and desktop 100% avalanche tested Superior t

BSC025N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary V 30 V Features DS R V =10 V 2.5 m DS(on),max GS Optimized for 5V driver application (Notebook, VGA, POL) V =4.5 V 3 GS Low FOMSW for High Frequency SMPS I 100 A D 100% avalanche tested N-channel PG-TDSON-8 Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (

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BSC027N10NS5 MOSFET TSON-8-3 OptiMOSTM Power-Transistor, 100 V 8 7 5 6 6 Features 7 5 8 Optimized for high performance SMPS, e.g. sync. rec. Pin 1 100% avalanche tested 2 4 3 3 Superior thermal resistance 4 2 1 N-channel Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 175 C rated Product Validation Qualified fo

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-MOSFET, 25 V BSC026NE2LS5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-MOSFET, 25 V BSC026NE2LS5 SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for high performance buck converters Very low on-resistance R @ V =4.5 V DS(on) GS 100% ava

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BSC027N06LS5 MOSFET SuperSO8 OptiMOSTM Power-Transistor, 60 V 5 8 6 7 Features 7 6 8 5 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel 4 Qualified according to JEDEC1) for target applications 1 3 2 2 Pb-free lead plating; RoHS compliant 3 1 4 Halogen-free according to IEC61249-2-

n-Channel Power MOSFET OptiMOS BSC024NE2LS Data Sheet 2.1, 2011-09-20 Final Industrial & Multimarket OptiMOS Power-MOSFET BSC024NE2LS 1 Description OptiMOS 25V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMO

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BSC020N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V 30 V DS Optimized for 5V driver application (Notebook, VGA, POL) R V =10 V 2 m DS(on),max GS V =4.5 V 2.5 Low FOMSW for High Frequency SMPS GS I 100 A D 100% Avalanche tested PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product

BSC025N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 2.5 m DS(on),max Optimized technology for DC/DC converters I 100 A D Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Super

BSC025N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 2.5 m DS(on),max Optimized technology for DC/DC converters I 100 A D Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Super

BSC020N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 2 m DS(on),max Optimized technology for DC/DC converters I 100 A D Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superio

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BSC020N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V 30 V DS Optimized for 5V driver application (Notebook, VGA, POL) R V =10 V 2 m DS(on),max GS V =4.5 V 2.5 Low FOMSW for High Frequency SMPS GS I 100 A D 100% Avalanche tested PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product

BSC022N04LS OptiMOSTM Power-MOSFET Product Summary Features VDS 40 V Optimized for high performance SMPS, e.g. sync. rec. RDS(on),max 2.2 mW Very low on-resistance R @ V =4.5 V DS(on) GS ID 100 A 100% avalanche tested QOSS 33 nC Superior thermal resistance QG(0V..10V) 37 nC N-channel Qualified according to JEDEC1) for target applications PG-TDSON-

& " & E $;B1= !#& ' $=;0@/? &@99-=D Features D Q 2CD CG D49 ?8 ') - . 7@B -'*- m D n) m x Q ) AD > J65 D649?@=@8I 7@B 4@?F6BD6BC 1 D 1) Q + E2= 7 65 244@B5 ?8 D@ $ 7@B D2B86D 2AA= 42D @?C G D ON Q ( 492??6= &@8 4 =6F6= Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n) Q /6BI =@G @? B6C CD2?46 D n) Q -EA6B @B D96B>2= B6C CD2?46 Q F2=2?496 B2D65 Q *3 7B66 A=2D ?8 , @

BSC026N04LS OptiMOSTM Power-MOSFET Product Summary Features VDS 40 V Optimized for high performance SMPS, e.g. sync. rec. RDS(on),max 2.6 mW Very low on-resistance R @ V =4.5 V DS(on) GS ID 100 A 100% avalanche tested QOSS 28 nC Superior thermal resistance QG(0V..10V) 32 nC N-channel Qualified according to JEDEC1) for target applications PG-TDSON-

BSC025N08LS5 MOSFET SuperSO8 OptiMOSTM5 Power-Transistor, 80 V 5 8 6 7 Features 7 6 8 5 Optimized for high performance SMPS, e.g. sync. Rec. 100% avalanche tested Superior thermal resistance N-channel, logic level 4 Qualified according to JEDEC1) for target applications 1 3 2 2 Pb-free lead plating; RoHS compliant 3 1 4 Halogen-free according

BSC022N04LS6 MOSFET TDSON-8 FL (enlarged source interconnection) OptiMOSTM 6 Power-Transistor, 40 V 8 7 6 Features 5 Optimized for synchronous application Very low on-resistance R DS(on) 1 5 2 6 100% avalanche tested 7 3 4 8 Superior thermal resistance N-channel 4 Pb-free lead plating; RoHS compliant 3 Halogen-free according to IEC61249-2-21 2

BSC021N08NS5 MOSFET TSON-8-3 OptiMOSTM5 Power-Transistor, 80 V 8 7 5 6 6 Features 7 5 8 Optimized for Synchronous Rectification in server and desktop Pin 1 100% avalanche tested 2 4 3 3 Superior thermal resistance 4 2 1 N-channel 175 C rated Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Product Validation Qua

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