BSC035N04LSG - описание и поиск аналогов

BSC035N04LS G OptiMOS 3 Power-Transistor Product Summary Features V 40 V DS Fast switching MOSFET for SMPS R 3.5 m DS(on),max Optimized technology for DC/DC converters I 100 A D Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on)

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM 5 Power-Transistor, 100 V BSC035N10NS5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM 5 Power-Transistor, 100 V BSC035N10NS5 SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior therma

& " & E $;B1= !#& ' $=;0@/? &@99-=D Features D m Q 2CD CG D49 ?8 ') - . 7@B -'*- D n) m x 1 D Q ) AD > J65 D649?@=@8I 7@B 4@?F6BD6BC 1) G D ON Q + E2= 7 65 244@B5 ?8 D@ $ 7@B D2B86D 2AA= 42D @?C Q ( 492??6= &@8 4 =6F6= Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n) Q /6BI =@G @? B6C CD2?46 D n) Q -EA6B @B D96B>2= B6C CD2?46 Q F2=2?496 B2D65 Q *3 7B66 A=2D ?8 , @

BSC030N04NS G OptiMOS 3 Power-Transistor Product Summary V 40 V Features DS R 3.0 m Fast switching MOSFET for SMPS DS(on),max I 100 A Optimized technology for DC/DC converters D Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Normal level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) S

Type BSC039N06NS OptiMOSTM Power-Transistor Features Product Summary Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V 100% avalanche tested RDS(on),max 3.9 mW Superior thermal resistance ID 100 A N-channel QOSS nC 32 Qualified according to JEDEC1) for target applications QG(0V..10V) nC 27 Pb-free lead plating; RoHS compliant H

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-Transistor, 80 V BSC030N08NS5 Data Sheet Rev. 2.2 Final Power Management & Multimarket OptiMOSTM5 Power-Transistor, 80 V BSC030N08NS5 SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal re

BSC030N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V 30 V DS R 3 m Fast switching MOSFET for SMPS DS(on),max I 100 A D Optimized technology for DC/DC converters PG-TDSON-8 Qualified according to JEDEC1) for target applications N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superi

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-Transistor, 80 V BSC037N08NS5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-Transistor, 80 V BSC037N08NS5 SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal re

& $ "& '! $ $;B1= '=- >5>?;= $=;0@/? &@99-=D Features V DS Q C ?8=6 ) 92??6= ? ,EA6B,( .0 m DS(on) max 1) Q * E2= 7 65 244@B5 ?8 $ 7@B D2B86D 2AA= 42D @?C 100 A D Q . CA64 2==I CE D65 7@B ?@D63@@A= 2?D Q , 2?286>6?D =@25 CG D49 ?8 Q "2=@86? 7B66 244@B5 ?8 D@ # Type Package Marking 1

BSC034N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 3.4 mW Optimized technology for DC/DC converters ID 100 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Sup

Type BSC034N06NS OptiMOSTM Power-Transistor Features Product Summary Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V 100% avalanche tested RDS(on),max 3.4 mW Superior thermal resistance ID 100 A N-channel QOSS nC 37 Qualified according to JEDEC1) for target applications QG(0V..10V) 33 nC Pb-free lead plating; RoHS compliant Hal

BSC030N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V 30 V DS Optimized for 5V driver application (Notebook, VGA, POL) R V =10 V 3 m DS(on),max GS Low FOMSW for High Frequency SMPS V =4.5 V 3.8 GS I 100 A 100% avalanche tested D PG-TDSON-8 N-channel Very low on-resistance RDS(on) @ VGS=4.5V Excellent gate charge x RDS(on) product

% ! % D %0 S 07DK >AI A@ D7E;EF3@57 - . A@ 0G =4 S J57>>7@F 93F7 5 3D97 J - . A@ BDA6G5F !* ( 1) S , G3>;8;76 355AD6;@9 FA % 8AD F3D97F 3BB>;53F;A@E S .GB7D;AD

% ! % D # A0

BSC034N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 3.4 mW Optimized technology for DC/DC converters ID 100 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Sup

BSC037N08NS5T MOSFET SuperSO8 OptiMOSTM 5 Power-Transistor, 80 V 5 8 6 7 Features 7 6 8 5 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel 4 Pb-free lead plating; RoHS compliant 1 3 2 2 Halogen-free according to IEC61249-2-21 3 1 4 Product validation Fully qualified according to JEDE

BSC032N04LS OptiMOSTM Power-MOSFET Product Summary Features VDS 40 V Optimized for high performance SMPS, e.g. sync. rec. RDS(on),max 3.2 mW Very low on-resistance R @ V =4.5 V DS(on) GS ID 98 A 100% avalanche tested QOSS 22 nC Superior thermal resistance QG(0V..10V) 25 nC N-channel Qualified according to JEDEC1) for target applications PG-TDSON-8

BSC030N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V 30 V DS R 3 m Fast switching MOSFET for SMPS DS(on),max I 100 A D Optimized technology for DC/DC converters PG-TDSON-8 Qualified according to JEDEC1) for target applications N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superi

pe $ $ TM "9@/; %;+877+;B Features V D Q #4513I CG9D389>7 1>4 CI>3 B53 R 1 m D n) m x Q ( @D9=9J54 D538>?F5BD5BC I 1 D Q H35

BSC034N10LS5 MOSFET SuperSO8 OptiMOSTM 5 Power-Transistor, 100 V 5 8 6 7 Features 7 6 8 5 Optimized for high performance SMPS, e.g. sync. Rec. 100% avalanche tested Superior thermal resistance N-channel, logic level 4 Pb-free lead plating; RoHS compliant 1 3 2 2 Halogen-free according to IEC61249-2-21 3 1 4 Product validation Fully qualified acco

BSC036NE7NS3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 75 V Optimized technology for synchronous rectification RDS(on),max 3.6 mW Ideal for high frequency switching and DC/DC converters ID 100 A Excellent gate charge x R product (FOM) DS(on) Superior thermal resistance N-channel, normal level 100% avalanche tested Pb-free plating; RoHS

& " & E $;B1= !#& ' $=;0@/? &@99-=D 1-?@=1> D Q 2CD CG D49 ?8 ') - . 7@B -'*- 4 m D n) m x Q ) AD > J65 D649?@=@8I 7@B 4@?F6BD6BC 1 D 1) Q + E2= 7 65 244@B5 ?8 D@ $ 7@B D2B86D 2AA= 42D @?C G D ON Q ( 492??6= &@8 4 =6F6= Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n) Q /6BI =@G @? B6C CD2?46 D n) Q -EA6B @B D96B>2= B6C CD2?46 Q F2=2?496 B2D65 Q *3 7B66 A=2D ?