BSC082N10LSG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BSC082N10LSG
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 13.8 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 24 ns
Cossⓘ - Выходная емкость: 710 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0082 Ohm
Тип корпуса: TDSON8
Аналог (замена) для BSC082N10LSG
BSC082N10LSG Datasheet (PDF)
bsc082n10ls7 bsc082n10lsg.pdf
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bsc080n03msg.pdf
BSC080N03MS GOptiMOS3 M-Series Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized for 5V driver application (Notebook, VGA, POL)RDS(on),max VGS=10 V 8 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 10.2 100% avalanche testedID 53 A N-channel PG-TDSON-8 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)
bsc084p03ns3g.pdf
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bsc0805ls.pdf
BSC0805LSMOSFETSuperSO8OptiMOSTM5 Power-Transistor, 100 V5867Features 7685 Optimized for high performance SMPS, e.g. sync. Rec. 100% avalanche tested Superior thermal resistance N-channel, logic level4 Pb-free lead plating; RoHS compliant132 2 Halogen-free according to IEC61249-2-213 14Product validationQualified according to J
bsc0804ls.pdf
BSC0804LSMOSFETSuperSO8OptiMOSTM5 Power-Transistor, 100 V5867Features 7685 Ideal for high-frequency switching 100% avalanche tested Superior thermal resistance N-channel, logic level4 Pb-free lead plating; RoHS compliant132 2 Halogen-free according to IEC61249-2-213 14 Optimized for chargersProduct validationQualified acco
bsc080n03msg5.pdf
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bsc080p03lsg.pdf
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bsc080n03lsg.pdf
BSC080N03LS GOptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 8 mW Optimized technology for DC/DC convertersID 53 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superio
bsc080n03ms.pdf
BSC080N03MS GOptiMOS3 M-Series Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized for 5V driver application (Notebook, VGA, POL)RDS(on),max VGS=10 V 8 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 10.2 100% avalanche testedID 53 A N-channel PG-TDSON-8 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)
bsc084p03ns3eg.pdf
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bsc080n03ls.pdf
BSC080N03LS GOptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 8 mW Optimized technology for DC/DC convertersID 53 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superio
bsc080n03ls5.pdf
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Другие MOSFET... BSC070N10NS3G , BSC072N03LDG , BSC076N06NS3G , BSC077N12NS3G , BSC079N10NSG , BSC080N03LSG , BSC080N03MSG , BSC080P03LSG , IRF9640 , BSC084P03NS3G , BSC084P03NS3EG , BSC0901NS , BSC0902NS , BSC0908NS , BSC0909NS , BSC090N03LSG , BSC090N03MSG .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918