Справочник MOSFET. BSC093N04LSG

 

BSC093N04LSG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: BSC093N04LSG

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 35 W

Предельно допустимое напряжение сток-исток (Uds): 40 V

Максимально допустимый постоянный ток стока (Id): 49 A

Общий заряд затвора (Qg): 18 nC

Сопротивление сток-исток открытого транзистора (Rds): 0.0093 Ohm

Тип корпуса: SuperSO8

Аналог (замена) для BSC093N04LSG

 

 

BSC093N04LSG Datasheet (PDF)

1.1. bsc093n04lsg rev1.04.pdf Size:650K _infineon

BSC093N04LSG
BSC093N04LSG

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5.1. bsc0909ns rev3.2.pdf Size:1638K _infineon

BSC093N04LSG
BSC093N04LSG

n-Channel Power MOSFET OptiMOS BSC0909NS Data Sheet 3.2, 2011-09-26 Final Industrial & Multimarket OptiMOS Power-MOSFET BSC0909NS 1 Description OptiMOS30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS 30V the b

5.2. bsc090n03ls rev1.6.pdf Size:686K _infineon

BSC093N04LSG
BSC093N04LSG

& " & E $;B1= !#& ' $=;0@/? &@99-=D Features D Q 2CD CG:D49:?8 ') - . 7@B -'*- m D n) m x 4 Q ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BC D 1) Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?C G? D ON? Q ( 492??6= &@8:4 =6F6= Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n) Q /6BI =@G @? B6C:CD2?46 D n) Q -EA6B:@B D96B>2= B6C:CD2?46 Q F2=2?496 B2D65 Q *3 7B66 A=2D:?8 , @"- 4@>A=

 5.3. bsc094n03s rev1.91 g.pdf Size:634K _infineon

BSC093N04LSG
BSC093N04LSG

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5.4. bsc090n03msg rev1.16.pdf Size:680K _infineon

BSC093N04LSG
BSC093N04LSG

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 5.5. bsc0901ns rev2.1 .pdf Size:1609K _infineon

BSC093N04LSG
BSC093N04LSG

n-Channel Power MOSFET OptiMOS BSC0901NS Data Sheet 2.1, 2011-09-23 Final Industrial & Multimarket OptiMOS Power-MOSFET BSC0901NS 1 Description OptiMOS30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make OptiMOS 30V the be

5.6. bsc0908ns rev3.2.pdf Size:1630K _infineon

BSC093N04LSG
BSC093N04LSG

n-Channel Power MOSFET OptiMOS BSC0908NS Data Sheet 3.2, 2011-09-26 Final Industrial & Multimarket OptiMOS Power-MOSFET BSC0908NS 1 Description OptiMOS30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS 30V the b

5.7. bsc0902ns rev2.1.pdf Size:1608K _infineon

BSC093N04LSG
BSC093N04LSG

n-Channel Power MOSFET OptiMOS BSC0902NS Data Sheet 2.1, 2011-09-23 Final Industrial & Multimarket OptiMOS Power-MOSFET BSC0902NS 1 Description OptiMOS30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make OptiMOS 30V the be

Другие MOSFET... IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 

 

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Список транзисторов

Обновления

MOSFET: QS8M51 | QS8M13 | QS8M11 | QS8K21 | QS8K2 | QS8K13 | QS8K11 | QS8J5 | QS8J4 | QS8J2 | QS8J13 | QS8J12 | QS8J11 | QS8F2 | QS6U24 |
 

 

 

 
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