BSR316P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BSR316P
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 0.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 0.36 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 6 ns
Cossⓘ - Выходная емкость: 25 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.8 Ohm
Тип корпуса: SC59
BSR316P Datasheet (PDF)
bsr316p.pdf
BSR316PSIPMOS Small-Signal-TransistorProduct Summary FeaturesVDS -100 V P-ChannelRDS(on),max 1.8 W Enhancement mode / Logic levelID -0.36 A Avalanche rated Pb-free lead plating; RoHS compliant Footprint compatible to SOT23PG-SC59 Qualified according to AEC Q101 Halogen free according to IEC61249-2-21Type Package Tape and Reel Informatio
bsr316p .pdf
BSR316PSIPMOS Small-Signal-TransistorProduct SummaryFeaturesVDS -100 V P-ChannelRDS(on),max 1.8W Enhancement mode / Logic levelID -0.36 A Avalanche rated Pb-free lead plating; RoHS compliant Footprint compatible to SOT23PG-SC59Type Package Tape and Reel Information Marking Lead free PackingBSR316P PG-SC59 L6327 = 3000 pcs. / reel LC Yes Non dryMa
bsr30 bsr31 bsr33.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109BSR30; BSR31; BSR33PNP medium power transistors1999 Apr 26Product specificationSupersedes data of 1997 Apr 01Philips Semiconductors Product specificationPNP medium power transistors BSR30; BSR31; BSR33FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V).1 emitter2 collectorAP
bsr30 bsr31 bsr33 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109BSR30; BSR31; BSR33PNP medium power transistorsProduct data sheet 2004 Dec 13Supersedes data of 1999 Apr 26NXP Semiconductors Product data sheetPNP medium power transistors BSR30; BSR31; BSR33FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V).1 emitter2 collectorAPPLICATIO
bsr30 bsr31 bsr33.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
bsr31 bsr33.pdf
SOT89 PNP SILICON PLANARBSR31MEDIUM POWER TRANSISTORSBSR33ISSUE 3 FEBRUARY 1996COMPLEMENTARY TYPE BSR31 BSR41CBSR33 BSR43PARTMARKING DETAILS BSR31 BR2BSR33 BR4ECBSOT89ABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL BSR31 BSR33 UNITCollector-Base Voltage VCBO -70 -90 VCollector-Emitter Voltage VCEO -60 -80 VEmitter-Base Voltage VEBO -5 V
bsr315p.pdf
BSR315PSIPMOS Small-Signal-TransistorProduct SummaryFeaturesV -60 VDS P-ChannelR 0.8DS(on),max Enhancement modeI -0.62 AD Logic level Footprint and pinning compatible with SOT-23 / SuperSOT-23 packagesSC-59 Avalanche rated Pb-free lead finishing; RoHS compliantType Package Tape and reel information Marking Lead free PackingBSR315P PG-
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: HM4806B
History: HM4806B
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918