BSZ097N04LSG
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: BSZ097N04LSG
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2.1
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 12
A
Tjⓘ - Максимальная температура канала: 150
°C
trⓘ -
Время нарастания: 2.4
ns
Cossⓘ - Выходная емкость: 340
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0097
Ohm
Тип корпуса:
TSDSON8
- подбор MOSFET транзистора по параметрам
BSZ097N04LSG
Datasheet (PDF)
..1. Size:635K infineon
bsz097n04lsg.pdf 

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7.1. Size:1391K infineon
bsz097n10ns5.pdf 

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-Transistor, 100 VBSZ097N10NS5Data SheetRev. 2.1FinalPower Management & MultimarketOptiMOSTM5 Power-Transistor, 100 VBSZ097N10NS5TSDSON-8 FL1 Description(enlarged source interconnection)Features Ideal for high frequency switching Optimized technology for DC/DC converters E
9.1. Size:1458K infineon
bsz099n06ls5.pdf 

BSZ099N06LS5MOSFETTSDSON-8 FLOptiMOSTM Power-Transistor,60V(enlarged source interconnection)Features Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21Table
9.2. Size:1453K infineon
bsz0909ns rev3.2.pdf 

n-Channel Power MOSFETOptiMOSBSZ0909NS Data Sheet3.2, 2011-09-22Final Industrial & MultimarketOptiMOS Power-MOSFETBSZ0909NS1 DescriptionOptiMOS30V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate- and output charges togetherwith lowest on state resistance in small footprint packages make OptiMOS
9.3. Size:681K infineon
bsz0901ns.pdf 

For BSZ0901NSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized for high performance Buck converter (Server,VGA)RDS(on),max VGS=10 V 2.0 mW Very Low FOMQOSS for High Frequency SMPSVGS=4.5 V 2.6 Low FOMSW for High Frequency SMPSID 40 A Excellent gate charge x R product (FOM)DS(on)PG-TSDSON-8 (fused leads) Very low on-resistance R @
9.4. Size:617K infineon
bsz0901nsi.pdf 

BSZ0901NSIOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized SyncFET for high performance buck converter RDS(on),max 2.1 mW Integrated monolithic Schottky-like diodeID 40 A Very low on-resistance R @ V =4.5 VDS(on) GSQOSS 28 nC 100% avalanche testedQG(0V..10V) 41 nC Superior thermal resistancePG-TSDSON-8 (fused leads) N-cha
9.5. Size:676K infineon
bsz0908nd.pdf 

BSZ0908NDPowerStage 3x3Product Summary FeaturesQ1 Q2 Dual N-channel OptiMOS MOSFETVDS 30 30 V Enhancement modeRDS(on),max VGS=10 V 18 9 mW Logic level (4.5V rated)VGS=4.5 V 25 13 Avalanche ratedID 19 30 A 100% Lead-free; RoHS compliantPG-WISON-8 Halogen-free according to IEC61249-2-21Type Package Marking Lead Free BSZ0908ND PG-WISON-8 090
9.6. Size:634K infineon
bsz0904nsi.pdf 

BSZ0904NSIOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized SyncFET for high performance buck converter RDS(on),max 4.0 mW Integrated monolithic Schottky-like diodeID 40 A Very low on-resistance R @ V =4.5 VDS(on) GSQOSS 12 nC 100% avalanche testedQG(0V..10V) 17 nC Superior thermal resistancePG-TSDSON-8 (fused leads) N-cha
9.7. Size:1556K infineon
bsz0909nd.pdf 

BSZ0909NDMOSFETPowerStage 3x3PowerStage 3x3Features Dual N-channel OptiMOS MOSFET Enhancement mode Logic level (4.5V rated) Avalanche rated 100% Lead-free; RoHS compliant Halogen-free according to IEC61249-2-21Table 1 Key Performance ParametersParameter Value UnitV 30 VDSR 18 mDS(on),maxI 20 ADQ 2.3 nCOSSQ (0V..4.5V) 1.8 nCGType /
9.8. Size:666K infineon
bsz0902ns.pdf 

BSZ0902NSFor OptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized for high performance Buck converter (Server,VGA)RDS(on),max VGS=10 V 2.6 mW Very Low FOMQOSS for High Frequency SMPSVGS=4.5 V 3.5 Low FOMSW for High Frequency SMPSID 40 A Excellent gate charge x R product (FOM)DS(on)PG-TSDSON-8 (fused leads) Very low on-resistance R
9.9. Size:1457K infineon
bsz0994ns.pdf 

BSZ0994NSMOSFETTSDSON-8 FLOptiMOSTM Power-MOSFET, 30 V(enlarged source interconnection)Features Optimized for high performance Wireless charger Very low FOM for High Frequency SMPSQOSS Low FOM for High Frequency SMPSSW Excellent gate charge x R product (FOM)DS(on) Very low on-resistance R @ V =4.5 VDS(on) GS 100% avalanche tested Superior the
9.10. Size:588K infineon
bsz0902nsi.pdf 

BSZ0902NSIOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized SyncFET for high performance buck converter RDS(on),max 2.8 mW Integrated monolithic Schottky-like diodeID 40 A Very low on-resistance R @ V =4.5 VDS(on) GSQOSS 17 nC 100% avalanche testedQG(0V..10V) 24 nC Superior thermal resistancePG-TSDSON-8 (fused leads) N-cha
9.11. Size:714K infineon
bsz0907nd.pdf 

BSZ0907NDDual N-Channel OptiMOS MOSFETProduct Summary FeaturesQ1 Q2 Dual N-channel OptiMOS MOSFETVDS 30 30 V Enhancement modeRDS(on),max VGS=10 V 9.5 7.2 mW Logic level (4.5V rated)VGS=4.5 V 13 10 Avalanche ratedID 25 30 A 100% Lead-free; RoHS compliantPG-WISON-8 Halogen-free according to IEC61249-2-21Type Package Marking Lead Free BSZ
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