Справочник MOSFET. BUZ30AH3045A

 

BUZ30AH3045A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BUZ30AH3045A
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 21 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 70 ns
   Cossⓘ - Выходная емкость: 280 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.13 Ohm
   Тип корпуса: D2PAK TO263

 Аналог (замена) для BUZ30AH3045A

 

 

BUZ30AH3045A Datasheet (PDF)

 ..1. Size:1654K  infineon
 buz30ah3045a.pdf

BUZ30AH3045A BUZ30AH3045A

BUZ30A H3045A . Halogen-free according to IEC61249-2-21Pb-free H3045A PG-TO263-3 Yes Rev. 2.22010-07-02BUZ30A H3045A2010-07-02Rev. 2.2BUZ30A H3045A2010-07-02Rev 2.2BUZ30A H3045A2010-07-02Rev 2.2BUZ30A H3045A2010-07-02Rev 2.2BUZ30A H3045A2010-07-02Rev 2.2BUZ30A H3045A101010.10.01Rev 2.2 2010-07-02BUZ30A H3045A2010-07-02Rev 2.2

 ..2. Size:228K  inchange semiconductor
 buz30ah3045a.pdf

BUZ30AH3045A BUZ30AH3045A

Isc N-Channel MOSFET Transistor BUZ30AH3045AFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

 7.1. Size:1428K  infineon
 buz30ah.pdf

BUZ30AH3045A BUZ30AH3045A

BUZ 30A H SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated . Halogen-free according to IEC61249-2--21Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Pb-freeBUZ 30A H 200 V 21 A 0.13 PG-TO-220-3 YesMaximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 26 C 21Pulsed drain current IDpulsTC = 25 C 84Aval

 7.2. Size:245K  inchange semiconductor
 buz30ah.pdf

BUZ30AH3045A BUZ30AH3045A

isc N-Channel MOSFET Transistor BUZ30AHIBUZ30AHFEATURESStatic drain-source on-resistance:RDS(on) 130mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh current,high speed switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

 8.1. Size:509K  infineon
 buz30a.pdf

BUZ30AH3045A BUZ30AH3045A

BUZ 30A SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Pb-freeBUZ 30A 200 V 21 A 0.13 PG-TO-220-3 YesMaximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 26 C 21Pulsed drain current IDpulsTC = 25 C 84Avalanche current,limited by Tjmax IAR 21Avalanche

 8.2. Size:229K  inchange semiconductor
 buz30a.pdf

BUZ30AH3045A BUZ30AH3045A

isc N-Channel Mosfet Transistor BUZ30AFEATURESStatic Drain-Source On-Resistance: R = 0.13(Max)DS(on)High current capability150 operating temperatureHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh current , high speed switchingSolenoid and relay driversDC-DC & DC-AC converters

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SUD50N06-09L | TPP65R160C

 

 
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