BUZ73LH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BUZ73LH
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 40 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 60 ns
Cossⓘ - Выходная емкость: 120 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.4 Ohm
Тип корпуса: TO220
BUZ73LH Datasheet (PDF)
buz73lh.pdf
BUZ 73L H SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic Level. Halogen-free according to IEC61249-2-21Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Pb-freeBUZ 73 L H 200 V 7 A 0.4 PG-TO220-3 YesMaximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 28 C 7Pulsed drain current IDpulsTC = 25
buz73l.pdf
BUZ 73L SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic LevelPin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Pb-freeBUZ 73 L 200 V 7 A 0.4 PG-TO220-3 YesMaximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 28 C 7Pulsed drain current IDpulsTC = 25 C 28Avalanche current,limited by Tjmax IAR
buz73al.pdf
BUZ 73 ALSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic LevelPin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 73 AL 200 V 5.5 A 0.6 TO-220 AB C67078-S1328-A3Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 37 C 5.5Pulsed drain current IDpulsTC = 25 C 22Avalanche current
buz73h.pdf
BUZ 73 H SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated . Halogen-free according to IEC61249-2-21Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Pb-freeBUZ 73 200 V 7 A 0.4 PG-TO220-3 YesMaximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 28 C 7Pulsed drain current IDpulsTC = 25 C 28Avalanche cur
buz73al.pdf
BUZ 73AL SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic LevelPin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 73 AL 200 V 5.5 A 0.6 TO-220 AB C67078-S1328-A3Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 37 C 5.5Pulsed drain current IDpulsTC = 25 C 22Avalanche curren
buz73alh.pdf
BUZ 73AL H SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic Level. Halogen-free according to IEC61249-2-21Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Pb-freeBUZ 73 AL H 200 V 5.5 A 0.6 PG-TO220-3 YesMaximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 37 C 5.5Pulsed drain current IDpulsTC
buz73.pdf
BUZ 73 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 73 200 V 7 A 0.4 TO-220 AB C67078-S1317-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 28 C 7Pulsed drain current IDpulsTC = 25 C 28Avalanche current,limited by Tjmax IAR 7
buz73a.pdf
BUZ 73ASIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Pb-freeBUZ 73 A 200 V 5.5 A 0.6 PG-TO-220 AB yesMaximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 37 C 5.5Pulsed drain current IDpulsTC = 25 C 22Avalanche current,limited by Tjmax IAR 7Avalanche
buz73ahg.pdf
BUZ 73A HSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated . Halogen-free according to IEC61249-2-21Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Pb-freeBUZ 73 A 200 V 5.5 A 0.6 PG-TO-220-3 yesMaximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 37 C 5.5Pulsed drain current IDpulsTC = 25 C 22Avalanc
buz73.pdf
isc N-Channel Mosfet Transistor BUZ73FEATURESDrain Source Voltage-: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)Fast Switching SpeedLow Drive RequirementMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned especially for applications such as switchingregulators, switching converte
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Список транзисторов
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