IPA037N08N3G - описание и поиск аналогов

IPA037N08N3 G OptiMOS(TM)3 Power-Transistor Product Summary Features VDS 80 V Ideal for high frequency switching and sync. rec. RDS(on),max 3.7 mW Optimized technology for DC/DC converters ID 75 A Excellent gate charge x R product (FOM) DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compli

# ! ! (TM) # A03 B53 7 m D n) m x Q ( @D9=9J54 D538>?F5BD5BC 7 D Q H35

isc N-Channel MOSFET Transistor IPA037N08N3,IIPA037N08N3 FEATURES Low drain-source on-resistance RDS(on) 3.7m (max) Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM

IPA030N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max 3 mW Excellent gate charge x R product (FOM) DS(on) ID 79 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequen

pe # ! ! TM # A03 B53 m D n) m x Q ( @D9=9J54 D538>?F5BD5BC 4 D Q H35

Type IPA032N06N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 60 V Ideal for high frequency switching and sync. rec. RDS(on),max 3.2 mW Optimized technology for DC/DC converters ID 84 A Excellent gate charge x R product (FOM) DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS com

isc N-Channel MOSFET Transistor IPA030N10N3,IIPA030N10N3 FEATURES Low drain-source on-resistance RDS(on) 3m (max) Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA032N06N3 FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING