Справочник MOSFET. IPA037N08N3G

 

IPA037N08N3G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPA037N08N3G
   Маркировка: 037N08N
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 41 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 75 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 88 nC
   trⓘ - Время нарастания: 49 ns
   Cossⓘ - Выходная емкость: 1640 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0037 Ohm
   Тип корпуса: TO220FP

 Аналог (замена) для IPA037N08N3G

 

 

IPA037N08N3G Datasheet (PDF)

 ..1. Size:393K  infineon
 ipa037n08n3g.pdf

IPA037N08N3G IPA037N08N3G

IPA037N08N3 GOptiMOS(TM)3 Power-TransistorProduct Summary FeaturesVDS 80 V Ideal for high frequency switching and sync. rec.RDS(on),max 3.7 mW Optimized technology for DC/DC convertersID 75 A Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compli

 3.1. Size:536K  infineon
 ipa037n08n3.pdf

IPA037N08N3G IPA037N08N3G

# ! ! (TM) #:A03 B53 7 m D n) m xQ ( @D9=9J54 D538>?F5BD5BC 7 DQ H35

 3.2. Size:256K  inchange semiconductor
 ipa037n08n3.pdf

IPA037N08N3G IPA037N08N3G

isc N-Channel MOSFET Transistor IPA037N08N3,IIPA037N08N3FEATURESLow drain-source on-resistance:RDS(on) 3.7m (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDevice for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM

 9.1. Size:335K  infineon
 ipa030n10n3g.pdf

IPA037N08N3G IPA037N08N3G

IPA030N10N3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max 3 mW Excellent gate charge x R product (FOM)DS(on)ID 79 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequen

 9.2. Size:542K  infineon
 ipa032n06n3 rev20.pdf

IPA037N08N3G IPA037N08N3G

pe # ! ! TM #:A03 B53 m D n) m xQ ( @D9=9J54 D538>?F5BD5BC 4 DQ H35

 9.3. Size:332K  infineon
 ipa032n06n3g.pdf

IPA037N08N3G IPA037N08N3G

Type IPA032N06N3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 60 V Ideal for high frequency switching and sync. rec.RDS(on),max 3.2 mW Optimized technology for DC/DC convertersID 84 A Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS com

 9.4. Size:255K  inchange semiconductor
 ipa030n10n3.pdf

IPA037N08N3G IPA037N08N3G

isc N-Channel MOSFET Transistor IPA030N10N3,IIPA030N10N3FEATURESLow drain-source on-resistance:RDS(on) 3m (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDevice for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

 9.5. Size:201K  inchange semiconductor
 ipa032n06n3.pdf

IPA037N08N3G IPA037N08N3G

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA032N06N3FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

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