Справочник MOSFET. IPA60R099C6

 

IPA60R099C6 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IPA60R099C6

Маркировка: 6R099C6

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 35 W

Предельно допустимое напряжение сток-исток (Uds): 600 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Пороговое напряжение включения Ugs(th): 3.5 V

Максимально допустимый постоянный ток стока (Id): 37.9 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 119 nC

Время нарастания (tr): 12 ns

Выходная емкость (Cd): 154 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.099 Ohm

Тип корпуса: TO220FP

Аналог (замена) для IPA60R099C6

 

 

IPA60R099C6 Datasheet (PDF)

1.1. ipa60r099c6 2 1.pdf Size:1385K _infineon

IPA60R099C6
IPA60R099C6

MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 ! 4 !GGD+ - 1Y ! .GO=J 2J9FKAKLGJ '.P 0 ! " 9L9 1 @==L 0 =N $AF9D 'FGJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJAF=GF 2

1.2. ipa60r099p6.pdf Size:2269K _infineon

IPA60R099C6
IPA60R099C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ P6 600V CoolMOS™ P6 Power Transistor IPx60R099P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS™ P6 Power Transistor IPW60R099P6, IPP60R099P6, IPA60R099P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed accordi

 4.1. ipb60r600p6 ipp60r600p6 ipd60r600p6 ipa60r600p6.pdf Size:2519K _update-mosfet

IPA60R099C6
IPA60R099C6

IPB60R600P6, IPP60R600P6, IPD60R600P6, IPA60R600P6 MOSFET D²PAK PG-TO 220 DPAK 600V CoolMOSª P6 Power Transistor tab tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 2 pioneered by Infineon Technologies. CoolMOS™ P6 series combines the 1 1 3 3 experience of the leading SJ MOSFET suppli

4.2. ipw60r330p6 ipb60r330p6 ipp60r330p6 ipa60r330p6.pdf Size:3084K _update-mosfet

IPA60R099C6
IPA60R099C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ P6 600V CoolMOS™ P6 Power Transistor IPx60R330P6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V CoolMOS™ P6 Power Transistor IPW60R330P6, IPB60R330P6, IPP60R330P6, IPA60R330P6 TO-247 D²PAK TO-220 1 Description tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,

 4.3. ipa60r120p7.pdf Size:1102K _update-mosfet

IPA60R099C6
IPA60R099C6

IPA60R120P7 MOSFET PG-TO 220 FP 600V CoolMOSª P7 Power Device The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. It combines the benefits of a fast switching SJ MOSFET

4.4. ipw60r190p6 ipb60r190p6 ipp60r190p6 ipa60r190p6.pdf Size:3091K _update-mosfet

IPA60R099C6
IPA60R099C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ P6 600V CoolMOS™ P6 Power Transistor IPx60R190P6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V CoolMOS™ P6 Power Transistor IPW60R190P6, IPB60R190P6, IPP60R190P6, IPA60R190P6 TO-247 D²PAK TO-220 1 Description tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,

 4.5. ipd60r400ce ips60r400ce ipa60r400ce.pdf Size:1345K _update-mosfet

IPA60R099C6
IPA60R099C6

IPD60R400CE, IPS60R400CE, IPA60R400CE MOSFET DPAK IPAK SL PG-TO 220 FP 600V CoolMOSª CE Power Transistor tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS™ CE is a 1 3 price-performance optimized platform enabling to target cost sensitive applica

4.6. ipa60r125c6 ipb60r125c6 ipp60r125c6 ipw60r125c6.pdf Size:1257K _update-mosfet

IPA60R099C6
IPA60R099C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 600V 600V CoolMOS™ C6 Power Transistor IPx60R125C6 Data Sheet Rev. 2.3 Final Power Management & Multimarket 600V CססIMOS C6 Pסwer Transistסr IPA60R125C6, IPB60R125C6 IPP60R125C6 IPW60R125C6 1 Descriptiסn CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according to the superj

4.7. ipw60r160p6 ipb60r160p6 ipp60r160p6 ipa60r160p6.pdf Size:2645K _update-mosfet

IPA60R099C6
IPA60R099C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ P6 600V CoolMOS™ P6 Power Transistor IPx60R160P6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V CoolMOS™ P6 Power Transistor IPW60R160P6, IPB60R160P6, IPP60R160P6, IPA60R160P6 TO-247 D²PAK TO-220 1 Description tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,

4.8. ipb60r380p6 ipp60r380p6 ipd60r380p6 ipa60r380p6.pdf Size:2540K _update-mosfet

IPA60R099C6
IPA60R099C6

IPB60R380P6, IPP60R380P6, IPD60R380P6, IPA60R380P6 MOSFET D²PAK PG-TO 220 DPAK 600V CoolMOSª P6 Power Transistor tab tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 2 pioneered by Infineon Technologies. CoolMOS™ P6 series combines the 1 1 3 3 experience of the leading SJ MOSFET suppli

4.9. ipw60r230p6 ipb60r230p6 ipp60r230p6 ipa60r230p6.pdf Size:2632K _update-mosfet

IPA60R099C6
IPA60R099C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ P6 600V CoolMOS™ P6 Power Transistor IPx60R230P6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V CoolMOS™ P6 Power Transistor IPW60R230P6, IPB60R230P6, IPP60R230P6, IPA60R230P6 TO-247 D²PAK TO-220 1 Description tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,

4.10. ipa60r800ce ipd60r800ce.pdf Size:1618K _infineon

IPA60R099C6
IPA60R099C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 600V CoolMOS™ CE Power Transistor IPx60R800CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS™ CE Power Transistor IPD60R800CE, IPA60R800CE DPAK TO-220 FP 1 Description tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio

4.11. ipa60r600e6 2 0.pdf Size:1339K _infineon

IPA60R099C6
IPA60R099C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R600E6 Data Sheet Rev. 2.0, 2010-04-12 Final Industrial & Multimarket 600V CoolMOS E6 Power Transistor IPD60R600E6, IPP60R600E6 IPD60R600E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principl

4.12. ipa60r120c7.pdf Size:1139K _infineon

IPA60R099C6
IPA60R099C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C7 600V CoolMOS™ C7 Power Transistor IPA60R120C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS™ C7 Power Transistor IPA60R120C7 TO-220 FP 1 Description CoolMOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and

4.13. ipa60r600cp rev2.0.pdf Size:557K _infineon

IPA60R099C6
IPA60R099C6

IPA60R600CP C??IMOSTM $;B1= '=-:>5>?;= $=;0@/? &@99-=D Features 1j max 650 V !0 U )DK:GH ;>H / L . ON g 1j X 0.6 !0 DC B6L U 2 AHF6 ADK <6H: 8=6F<: 21 nC g typ U "LHF:B: 9J 9H F6H:9 U %><= E:6@ 8IFF:CH 86E67>A>HM U . I6A>;>:9 for industrial grade applications 688DF9>C< HD '"!" -$ 1, #- U -7 ;F:: A:69 EA6H>C< / D%0 8DBEA>6CH; Halogen free mold compound ;;8"#& $

4.14. ipa60r650ce ipd60r650ce.pdf Size:1677K _infineon

IPA60R099C6
IPA60R099C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 600V CoolMOS™ CE Power Transistor IPx60R650CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS™ CE Power Transistor IPD60R650CE, IPA60R650CE DPAK TO-220 FP 1 Description tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio

4.15. ipa60r280c6 2 1.pdf Size:1432K _infineon

IPA60R099C6
IPA60R099C6

MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 ! 4 !GGD+ - 1Y ! .GO=J 2J9FKAKLGJ '.P 0 ! " 9L9 1 @==L 0 =N $AF9D 'FGJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJ4.16. ipa60r280p6.pdf Size:2865K _infineon

IPA60R099C6
IPA60R099C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ P6 600V CoolMOS™ P6 Power Transistor IPx60R280P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS™ P6 Power Transistor IPW60R280P6, IPP60R280P6, IPA60R280P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed accordi

4.17. ipa60r385cp rev2.2.pdf Size:612K _infineon

IPA60R099C6
IPA60R099C6

IPA60R385CP CoolMOS Power Transistor Product Summary Features V 1j max 650 V DS V )DL:HI ;>I / M . ON G R @T Y 0. 85 DS(on) max j V 2 AIG6 ADL <6I: 8=6G<: Q 17 nC g typ V "MIG:B: 9K 9I G6I:9 V %><= E:6@ 8JGG:CI 86E67>A>IN 1) V . J6A>;>:9 for industrial grade applications 688DG9>C< ID '"!" PG?TO220 V -7 ;G:: A:69 EA6I>C< / D%0 8DBEA>6CI; Halogen free mold compound

4.18. ipa60r460ce ipd60r460ce.pdf Size:1709K _infineon

IPA60R099C6
IPA60R099C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 600V CoolMOS™ CE Power Transistor IPx60R460CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS™ CE Power Transistor IPD60R460CE, IPA60R460CE DPAK TO-220 FP 1 Description tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio

4.19. ipa60r160p6.pdf Size:2909K _infineon

IPA60R099C6
IPA60R099C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ P6 600V CoolMOS™ P6 Power Transistor IPx60R160P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS™ P6 Power Transistor IPW60R160P6, IPP60R160P6, IPA60R160P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed accordi

4.20. ipa60r1k0ce.pdf Size:1015K _infineon

IPA60R099C6
IPA60R099C6

IPA60R1K0CE MOSFET TO-220 FP 600V CoolMOS™ CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting hig

4.21. ipa60r125cp rev2.1.pdf Size:557K _infineon

IPA60R099C6
IPA60R099C6

IPA60R125CP C??IMOS $;B1= '=-:>5>?;= $=;0@/? &@99-=D Features 1j max 650 V !0 V 4DGA9L>9: 7:HI / >C 1, #JAAE6@ DS on Y 0.125 DS(on) max j V 2 AIG6 ADL <6I: 8=6G<: 5 nC g typ V "MIG:B: 9K 9I G6I:9 V %><= E:6@ 8JGG:CI 86E67>A>IN V . J6A>;>:9 for industrial grade applications 688DG9>C< ID '"!" PG?TO220 V -7 ;G:: A:69 EA6I>C< / D%0 8DBEA>6CI; Halogen free mold compound ;;8"#&

4.22. ipa60r125p6.pdf Size:2729K _infineon

IPA60R099C6
IPA60R099C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ P6 600V CoolMOS™ P6 Power Transistor IPx60R125P6 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS™ P6 Power Transistor IPW60R125P6, IPP60R125P6, IPA60R125P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed accordi

4.23. ipa60r520c6 2.0.pdf Size:917K _infineon

IPA60R099C6
IPA60R099C6

MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 ! 4 !GGD+ - 1Y ! .GO=J 2J9FKAKLGJ '.P 0 ! " 9L9 1 @==L 0 =N $AF9D 'F )>.;?6?@<> & ' && ' IPA60R520C6 1 Descripti?n !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJAF=GF 2=;

4.24. ipa60r165cp rev2.2.pdf Size:606K _infineon

IPA60R099C6
IPA60R099C6

IPA60R165CP CoolMOS Power Transistor Product Summary Features V 1j max 650 V !0 V )DL:HI ;>I / xQg ON R @T Y 0.165 DS(on) max j V 2 AIG6 ADL <6I: 8=6G<: Q 9 nC g typ V "MIG:B: 9K 9I G6I:9 V %><= E:6@ 8JGG:CI 86E67>A>IN V . J6A>;>:9 for industrial grade applications 688DG9>C< ID '"!" V -7 ;G:: A:69 EA6I>C< / D%0 8DBEA>6CI; Halogen free mold compound PG?TO220 CoolMO

4.25. ipa60r250cp rev2.0.pdf Size:555K _infineon

IPA60R099C6
IPA60R099C6

IPA60R250CP C??IMOS $;B1= '=-:>5>?;= $=;0@/? &@99-=D Features 1j max 650 V !0 V )DL:HI ;>I / xQg ON Y 0.250 W DS(on) max j V 2 AIG6 ADL <6I: 8=6G<: 26 nC g typ V "MIG:B: 9K 9I G6I:9 V %><= E:6@ 8JGG:CI 86E67>A>IN -$ 1, #- V . J6A>;>:9 for industrial grade applications 688DG9>C< ID '"!" V -7 ;G:: A:69 EA6I>C< / D%0 8DBEA>6CI; Halogen free mold compound ;;8"#& $

4.26. ipa60r750e6 2.0 .pdf Size:2043K _infineon

IPA60R099C6
IPA60R099C6

MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 # 4 !GGD+ - 1Y # .GO=J 2J9FKAKLGJ '.P 0 # " 9L9 1 @==L 0 =N Final 'F )>.;?6?@<> & ' && ' IPA60R750E6 1 Descripti?n !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJAF=GF 2=;

4.27. ipa60r380c6 2 0.pdf Size:1201K _infineon

IPA60R099C6
IPA60R099C6

MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 ! 4 !GGD+ - 1Y ! .GO=J 2J9FKAKLGJ '.P 0 ! " 9L9 1 @==L 0 =N Final 'FGJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJ4.28. ipa60r299cp rev2.1.pdf Size:546K _infineon

IPA60R099C6
IPA60R099C6

IPA60R299CP C??IMOS $;B1= '=-:>5>?;= $=;0@/? &@99-=D Features 1j max 650 V !0 V )DL:HI ;>I / xQg ON Y 0.299 DS(on) max j V 2 AIG6 ADL <6I: 8=6G<: 22 nC g typ V "MIG:B: 9K 9I G6I:9 V %><= E:6@ 8JGG:CI 86E67>A>IN V . J6A>;>:9 for industrial grade applications 688DG9>C< ID '"!" PG?TO220FP V -7 ;G:: A:69 EA6I>C< / D%0 8DBEA>6CI; Halogen free mold compound ;;8"#&

4.29. ipa60r190p6.pdf Size:2872K _infineon

IPA60R099C6
IPA60R099C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ P6 600V CoolMOS™ P6 Power Transistor IPx60R190P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS™ P6 Power Transistor IPW60R190P6, IPP60R190P6, IPA60R190P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed accordi

4.30. ipa60r450e6 2 0.pdf Size:2131K _infineon

IPA60R099C6
IPA60R099C6

MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 # 4 !GGD+ - 1Y # .GO=J 2J9FKAKLGJ '.P 0 # " 9L9 1 @==L 0 =N Final 'F )>.;?6?@<> & ' && ' IPA60R450E6 1 Descripti?n !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJAF=GF 2=;

4.31. ipa60r380e6 2 0.pdf Size:1282K _infineon

IPA60R099C6
IPA60R099C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R380E6 Data Sheet Rev. 2.0, 2010-04-09 Final Industrial & Multimarket 600V CoolMOS E6 Power Transistor IPP60R380E6, IPA60R380E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pionee

4.32. ipa60r190e6 2 0.pdf Size:1150K _infineon

IPA60R099C6
IPA60R099C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R190E6 Data Sheet Rev. 2.0, 2010-05-03 Final Industrial & Multimarket 600V CoolMOS E6 Power Transistor IPP60R190E6, IPA60R190E6 IPW60R190E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principl

4.33. ipa60r280cfd7.pdf Size:1140K _infineon

IPA60R099C6
IPA60R099C6

IPA60R280CFD7 MOSFET PG-TO 220 FP 600V CoolMOSª CFD7 Power Device CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS™ CFD7 is the successor to the CoolMOS™ CFD2 series and is an optimized platform tailored to target soft switching applications such

4.34. ipa60r1k5ce.pdf Size:857K _infineon

IPA60R099C6
IPA60R099C6

IPA60R1K5CE MOSFET TO-220 FP 600V CoolMOS™ CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting hig

4.35. ipa60r199cp rev21a.pdf Size:561K _infineon

IPA60R099C6
IPA60R099C6

IPA60R199CP C??IMOS $;B1= '=-:>5>?;= $=;0@/? &@99-=D Features @ Tj max 650 V !0 V )DL:HI ;>I / xQg ON Y 0.199 DS(on) max j V 2 AIG6 ADL <6I: 8=6G<: nC g typ V "MIG:B: 9K 9I G6I:9 V %><= E:6@ 8JGG:CI 86E67>A>IN PG?TO220 V . J6A>;>:9 for industrial grade applications 688DG9>C< ID '"!" V -7 ;G:: A:69 EA6I>C< / D%0 8DBEA>6CI; Halogen free mold compound ;;8"#& $ 5>

4.36. ipa60r230p6.pdf Size:2886K _infineon

IPA60R099C6
IPA60R099C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ P6 600V CoolMOS™ P6 Power Transistor IPx60R230P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS™ P6 Power Transistor IPW60R230P6, IPP60R230P6, IPA60R230P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed accordi

4.37. ipa60r520cp rev2.0.pdf Size:557K _infineon

IPA60R099C6
IPA60R099C6

IPA60R520CP C??IMOSTM $;B1= '=-:>5>?;= $=;0@/? &@99-=D Features 1j max 650 V !0 U )DK:GH ;>H / L . ON g 1? X 0.520 W !0 DC B6L U 2 AHF6 ADK <6H: 8=6F<: 24 nC g typ U "LHF:B: 9J 9H F6H:9 U %><= E:6@ 8IFF:CH 86E67>A>HM U . I6A>;>:9 for industrial grade applications 688DF9>C< HD '"!" U -7 ;F:: A:69 EA6H>C< / D%0 8DBEA>6CH; Halogen free mold compound -$ 1, #- ;;8"#

4.38. ipa60r190c6 2 1.pdf Size:1495K _infineon

IPA60R099C6
IPA60R099C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS C6 Power Transistor IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the s

4.39. ipa60r600p7.pdf Size:1014K _infineon

IPA60R099C6
IPA60R099C6

IPA60R600P7 MOSFET PG-TO 220 FP 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. It combines the benefits of a fast switching SJ MO

4.40. ipa60r160c6 2 1.pdf Size:1723K _infineon

IPA60R099C6
IPA60R099C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS C6 Power Transistor IPA60R160C6, IPB60R160C6 IPP60R160C6 IPW60R160C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (

4.41. ipa60r400ce ipd60r400ce.pdf Size:1706K _infineon

IPA60R099C6
IPA60R099C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 600V CoolMOS™ CE Power Transistor IPx60R400CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS™ CE Power Transistor IPD60R400CE, IPA60R400CE DPAK TO-220 FP 1 Description tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio

4.42. ipa60r520e6 2 0.pdf Size:1261K _infineon

IPA60R099C6
IPA60R099C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R520E6 Data Sheet Rev. 2.0, 2010-04-09 Final Industrial & Multimarket 600V CoolMOS E6 Power Transistor IPP60R520E6, IPA60R520E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pionee

4.43. ipa60r950c6 2.1.pdf Size:1680K _infineon

IPA60R099C6
IPA60R099C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R950C6 Data Sheet Rev. 2.1, 2010-03-11 Final Industrial & Multimarket 600V CoolMOS C6 Power Transistor IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction

4.44. ipa60r600c6 2 0.pdf Size:1051K _infineon

IPA60R099C6
IPA60R099C6

MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 ! 4 !GGD+ - 1Y ! .GO=J 2J9FKAKLGJ '.P 0 ! " 9L9 1 @==L 0 =N Final 'FGJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJAF=GF 2=

4.45. ipa60r170cfd7.pdf Size:1126K _infineon

IPA60R099C6
IPA60R099C6

IPA60R170CFD7 MOSFET PG-TO 220 FP 600V CoolMOSª CFD7 Power Device CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS™ CFD7 is the successor to the CoolMOS™ CFD2 series and is an optimized platform tailored to target soft switching applications such

4.46. ipa60r600p6 ipd60r600p6.pdf Size:2688K _infineon

IPA60R099C6
IPA60R099C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ P6 600V CoolMOS™ P6 Power Transistor IPx60R600P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS™ P6 Power Transistor IPP60R600P6, IPA60R600P6, IPD60R600P6 TO-220 TO-220 FP DPAK 1 Description tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed accor

4.47. ipa60r280e6 2.0.pdf Size:1975K _infineon

IPA60R099C6
IPA60R099C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R280E6 Data Sheet Rev. 2.0, 2010-04-09 Final Industrial & Multimarket 600V CoolMOS E6 Power Transistor IPP60R280E6, IPA60R280E6 IPW60R280E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principl

4.48. ipa60r380p6 ipd60r380p6.pdf Size:2739K _infineon

IPA60R099C6
IPA60R099C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ P6 600V CoolMOS™ P6 Power Transistor IPx60R380P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS™ P6 Power Transistor IPP60R380P6, IPA60R380P6, IPD60R380P6 TO-220 TO-220 FP DPAK 1 Description tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed accor

4.49. ipa60r330p6.pdf Size:2866K _infineon

IPA60R099C6
IPA60R099C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ P6 600V CoolMOS™ P6 Power Transistor IPx60R330P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS™ P6 Power Transistor IPW60R330P6, IPP60R330P6, IPA60R330P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed accordi

4.50. ipa60r280p7.pdf Size:1105K _infineon

IPA60R099C6
IPA60R099C6

IPA60R280P7 MOSFET PG-TO 220 FP 600V CoolMOSª P7 Power Device The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. It combines the benefits of a fast switching SJ MOSFET

4.51. ipa60r120c7.pdf Size:201K _inchange_semiconductor

IPA60R099C6
IPA60R099C6

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R120C7 ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATING

4.52. ipa60r120p7.pdf Size:239K _inchange_semiconductor

IPA60R099C6
IPA60R099C6

isc N-Channel MOSFET Transistor IPA60R120P7 ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.12Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High switching Power Supply ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

4.53. ipa60r299cp.pdf Size:201K _inchange_semiconductor

IPA60R099C6
IPA60R099C6

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R299CP ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATING

4.54. ipa60r1k0ce.pdf Size:201K _inchange_semiconductor

IPA60R099C6
IPA60R099C6

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R1K0CE ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAME

4.55. ipa60r125p6.pdf Size:245K _inchange_semiconductor

IPA60R099C6
IPA60R099C6

isc N-Channel MOSFET Transistor IPA60R125P6,IIPA60R125P6 ·FEATURES ·Drain-source on-resistance: RDS(on) ≤0.125Ω (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·It is intended for general purpose switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃)

4.56. ipa60r190c6.pdf Size:203K _inchange_semiconductor

IPA60R099C6
IPA60R099C6

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPA60R190C6 ·FEATURES ·With TO-220F packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·PFC stages, hard switching PWM stages and resonant switching ·PC Silverbox, Adapte

4.57. ipa60r520cp.pdf Size:201K _inchange_semiconductor

IPA60R099C6
IPA60R099C6

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R520CP ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATING

4.58. ipa60r125c6.pdf Size:205K _inchange_semiconductor

IPA60R099C6
IPA60R099C6

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R125C6 ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·Load switch ·Power management ·ABSOLUTE MAXIMUM RATINGS(T =25

4.59. ipa60r600cp.pdf Size:200K _inchange_semiconductor

IPA60R099C6
IPA60R099C6

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R600CP ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATING

4.60. ipa60r280cfd7.pdf Size:201K _inchange_semiconductor

IPA60R099C6
IPA60R099C6

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R280CFD7 ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATI

4.61. ipa60r280e6.pdf Size:245K _inchange_semiconductor

IPA60R099C6
IPA60R099C6

isc N-Channel MOSFET Transistor IPA60R280E6,IIPA60R280E6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.28Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ·ABSOL

4.62. ipa60r1k5ce.pdf Size:201K _inchange_semiconductor

IPA60R099C6
IPA60R099C6

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R1K5CE ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAME

4.63. ipa60r250cp.pdf Size:201K _inchange_semiconductor

IPA60R099C6
IPA60R099C6

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R250CP ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATING

4.64. ipa60r600p7.pdf Size:201K _inchange_semiconductor

IPA60R099C6
IPA60R099C6

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R600P7 ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATING

4.65. ipa60r280c6.pdf Size:202K _inchange_semiconductor

IPA60R099C6
IPA60R099C6

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R280C6 ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAM

4.66. ipa60r125cp.pdf Size:201K _inchange_semiconductor

IPA60R099C6
IPA60R099C6

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R125CP ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATING

4.67. ipa60r160c6.pdf Size:201K _inchange_semiconductor

IPA60R099C6
IPA60R099C6

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPA60R160C6 ·FEATURES ·With TO-220F packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VA

4.68. ipa60r380c6.pdf Size:203K _inchange_semiconductor

IPA60R099C6
IPA60R099C6

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPA60R380C6 ·FEATURES ·With TO-220F packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·PFC stages, hard switching PWM stages and resonant switching ·PC Silverbox, Adapte

4.69. ipa60r170cfd7.pdf Size:201K _inchange_semiconductor

IPA60R099C6
IPA60R099C6

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R170CFD7 ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATI

4.70. ipa60r165cp.pdf Size:201K _inchange_semiconductor

IPA60R099C6
IPA60R099C6

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R165CP ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATING

4.71. ipa60r385cp.pdf Size:201K _inchange_semiconductor

IPA60R099C6
IPA60R099C6

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R385CP ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATING

4.72. ipa60r199cp.pdf Size:240K _inchange_semiconductor

IPA60R099C6
IPA60R099C6

isc N-Channel MOSFET Transistor IPA60R199CP, IIPA60R199CP ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.199Ω ·High peak current capability ·Enhancement mode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Hard switching SMPS topologies ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAM

4.73. ipa60r280p7.pdf Size:201K _inchange_semiconductor

IPA60R099C6
IPA60R099C6

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R280P7 ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATING

Другие MOSFET... IPA50R140CP , IPA50R199CP , IPA50R250CP , IPA50R299CP , IPA50R350CP , IPA50R380CE , IPA50R399CP , IPA50R520CP , 2SK4106 , IPA60R125C6 , IPA60R125CP , IPA60R160C6 , IPA60R165CP , IPA60R190C6 , IPA60R190E6 , IPA60R199CP , IPA60R250CP .

 

 
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