IPA60R199CP - описание и поиск аналогов

IPA60R199CP CoolMOS Power Transistor Product Summary Features V @ Tj,max 650 V DS Lowest figure-of-merit RONxQg R @T = 25 C 0.199 DS(on),max j Ultra low gate charge Q 32 nC g,typ Extreme dv/dt rated High peak current capability PG-TO220 Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant CoolMOS CP is desi

isc N-Channel MOSFET Transistor IPA60R199CP, IIPA60R199CP FEATURES Static drain-source on-resistance RDS(on) 0.199 High peak current capability Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Hard switching SMPS topologies ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM

IPA60R199CP C IMOS $;B1= '=- >5>?;= $=;0@/? &@99-=D Features @ Tj max 650 V !0 V )DL HI ;>I / xQg ON Y 0.199 DS(on) max j V 2 AIG6 ADL IN PG TO220 V . J6A>;> 9 for industrial grade applications 688DG9>CC6CI; Halogen free mold compound ;;8

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R190E6 Data Sheet Rev. 2.0, 2010-05-03 Final Industrial & Multimarket 600V CoolMOS E6 Power Transistor IPP60R190E6, IPA60R190E6 IPW60R190E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ)

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R190P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R190P6, IPP60R190P6, IPA60R190P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.3 Final Power Management & Multimarket 600V CoolMOS C6 Power Transistor IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R190P6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R190P6, IPB60R190P6, IPP60R190P6, IPA60R190P6 TO-247 D PAK TO-220 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs,

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS C6 Power Transistor IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R190P6 FEATURES Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R = 0.19 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R190E6 FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPA60R190C6 FEATURES With TO-220F packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS PFC stages, hard switching PWM stages and resonant switching PC Silverbox, Adapte