Справочник MOSFET. IPA60R199CP

 

IPA60R199CP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPA60R199CP
   Маркировка: 6R199P
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 34 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 16 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 32 nC
   trⓘ - Время нарастания: 5 ns
   Cossⓘ - Выходная емкость: 72 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.199 Ohm
   Тип корпуса: TO220FP

 Аналог (замена) для IPA60R199CP

 

 

IPA60R199CP Datasheet (PDF)

 ..1. Size:410K  infineon
ipa60r199cp.pdf

IPA60R199CP IPA60R199CP

IPA60R199CPCoolMOS Power TransistorProduct SummaryFeaturesV @ Tj,max 650 VDS Lowest figure-of-merit RONxQgR @T = 25C 0.199DS(on),max j Ultra low gate chargeQ 32 nCg,typ Extreme dv/dt rated High peak current capabilityPG-TO220 Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantCoolMOS CP is desi

 ..2. Size:240K  inchange semiconductor
ipa60r199cp.pdf

IPA60R199CP IPA60R199CP

isc N-Channel MOSFET Transistor IPA60R199CP, IIPA60R199CPFEATURESStatic drain-source on-resistance:RDS(on) 0.199High peak current capabilityEnhancement mode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHard switching SMPS topologiesABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

 0.1. Size:561K  infineon
ipa60r199cpa.pdf

IPA60R199CP IPA60R199CP

IPA60R199CPCIMOS $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures @ Tj max 650 V!0 V )DL:HI ;>I / xQgON Y 0.199 DS(on) max jV 2 AIG6 ADL INPGTO220V . J6A>;>:9 for industrial grade applications 688DG9>CC6CI; Halogen free mold compound ;;8

 6.1. Size:851K  infineon
ipw60r190e6 ipp60r190e6 ipa60r190e6.pdf

IPA60R199CP IPA60R199CP

C lMO e n i t I 1 I 1 I 1 O 47 O O 1 Descriptint bC lMO i e l ti n te n l i lt e p eMO e i ne in t t e pej n ti n ) pin iple n pi neee b In ine n e n l ie C lMO eie mbine t eexpeien e t e le in MO pplie it i l inn ti n e e ltin e i e p i e ll bene it t it in MO ile n t i i in e e e xtemel l it in n n ti nl e m ke it in

 6.2. Size:1150K  infineon
ipa60r190e6.pdf

IPA60R199CP IPA60R199CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6600V CoolMOS E6 Power TransistorIPx60R190E6Data SheetRev. 2.0, 2010-05-03FinalIndustrial & Multimarket600V CoolMOS E6 Power Transistor IPP60R190E6, IPA60R190E6IPW60R190E61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ)

 6.3. Size:2872K  infineon
ipa60r190p6 ipp60r190p6 ipw60r190p6.pdf

IPA60R199CP IPA60R199CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R190P6Data SheetRev. 2.1FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R190P6, IPP60R190P6, IPA60R190P6TO-247 TO-220 TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi

 6.4. Size:1214K  infineon
ipa60r190c6 ipb60r190c6 ipi60r190c6 ipp60r190c6 ipw60r190c6.pdf

IPA60R199CP IPA60R199CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R190C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CoolMOS C6 Power Transistor IPA60R190C6, IPB60R190C6IPI60R190C6, IPP60R190C6IPW60R190C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to

 6.5. Size:3091K  infineon
ipw60r190p6 ipb60r190p6 ipp60r190p6 ipa60r190p6.pdf

IPA60R199CP IPA60R199CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R190P6Data SheetRev. 2.2FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R190P6, IPB60R190P6, IPP60R190P6,IPA60R190P6TO-247 DPAK TO-2201 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs,

 6.6. Size:1495K  infineon
ipa60r190c6.pdf

IPA60R199CP IPA60R199CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPx60R190C6Data SheetRev. 2.1, 2010-02-09FinalIndustrial & Multimarket600V CoolMOS C6 Power Transistor IPA60R190C6, IPB60R190C6IPI60R190C6, IPP60R190C6IPW60R190C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according

 6.7. Size:225K  inchange semiconductor
ipa60r190p6.pdf

IPA60R199CP IPA60R199CP

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R190P6FEATURESDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.19(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

 6.8. Size:223K  inchange semiconductor
ipa60r190e6.pdf

IPA60R199CP IPA60R199CP

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R190E6FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

 6.9. Size:203K  inchange semiconductor
ipa60r190c6.pdf

IPA60R199CP IPA60R199CP

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPA60R190C6FEATURESWith TO-220F packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stages, hard switching PWM stages and resonant switchingPC Silverbox, Adapte

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