Справочник MOSFET. IPA60R450E6

 

IPA60R450E6 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPA60R450E6
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 30 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9.2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 9 ns
   Cossⓘ - Выходная емкость: 41 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.45 Ohm
   Тип корпуса: TO220FP

 Аналог (замена) для IPA60R450E6

 

 

IPA60R450E6 Datasheet (PDF)

 ..1. Size:1210K  infineon
ipd60r450e6 ipp60r450e6 ipa60r450e6.pdf

IPA60R450E6
IPA60R450E6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6 600V600V CoolMOS E6 Power TransistorIPx60R450E6Data SheetRev. 2.2FinalPower Management & Multimarket600V CIMOS E6 Pwer Transistr IPD60R450E6, IPP60R450E6IPA60R450E61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according to the superjunction (S )

 ..2. Size:2131K  infineon
ipa60r450e6.pdf

IPA60R450E6
IPA60R450E6

MOSFET+ =L9D - PA

 ..3. Size:223K  inchange semiconductor
ipa60r450e6.pdf

IPA60R450E6
IPA60R450E6

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R450E6FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

 7.1. Size:1706K  infineon
ipa60r400ce ipd60r400ce.pdf

IPA60R450E6
IPA60R450E6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE600V CoolMOS CE Power TransistorIPx60R400CEData SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS CE Power TransistorIPD60R400CE, IPA60R400CEDPAK TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio

 7.2. Size:1235K  infineon
ipd60r460ce ipa60r460ce.pdf

IPA60R450E6
IPA60R450E6

IPD60R460CE, IPA60R460CEMOSFETDPAK PG-TO 220 FP600V CoolMOS CE Power TransistortabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 13price-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Ligh

 7.3. Size:1345K  infineon
ipd60r400ce ips60r400ce ipa60r400ce.pdf

IPA60R450E6
IPA60R450E6

IPD60R400CE, IPS60R400CE, IPA60R400CEMOSFETDPAK IPAK SL PG-TO 220 FP600V CoolMOS CE Power TransistortabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 13price-performance optimized platform enabling to target cost sensitiveapplica

 7.4. Size:1709K  infineon
ipa60r460ce ipd60r460ce.pdf

IPA60R450E6
IPA60R450E6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE600V CoolMOS CE Power TransistorIPx60R460CEData SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS CE Power TransistorIPD60R460CE, IPA60R460CEDPAK TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio

 7.5. Size:223K  inchange semiconductor
ipa60r460ce.pdf

IPA60R450E6
IPA60R450E6

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R460CEFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

 7.6. Size:225K  inchange semiconductor
ipa60r400ce.pdf

IPA60R450E6
IPA60R450E6

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R400CEFEATURESWith TO-220F PackageDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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