IPA90R1K0C3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IPA90R1K0C3
Маркировка: 9R1K0C
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 32 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 900 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 5.7 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 34 nC
trⓘ - Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 42 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1 Ohm
Тип корпуса: TO220FP
Аналог (замена) для IPA90R1K0C3
IPA90R1K0C3 Datasheet (PDF)
ipa90r1k0c3.pdf
IPA90R1K0C3CIMOS $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures @ =25C 900 V!0 U )DL:HI ;>I / M .ON g X 1.0 WDS(on) max U "MIG:B: 9K 9I G6I:9 4 nCg typU %>A>INU . J6A>;>:9 for industrial grade applications 688DG9>CC6CIU 2 AIG6 ADL 53:10 2;=U . J6
ipa90r1k2c3.pdf
IPA90R1K2C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @T =25C 1.2DS(on),max J Extreme dv/dt ratedQ 28 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO220 FP Ultra low gate chargeCoolMOS 9
ipa90r1k2c3.pdf
isc N-Channel MOSFET Transistor IPA90R1K2C3IIPA90R1K2C3FEATURESStatic drain-source on-resistance:RDS(on) 1.2Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONHigh peak current capabilityUltra low gate chargeABSOLUTE MAXIMUM RATINGS(T =25)a
ipa90r500c3.pdf
IPA90R500C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @ T = 25C 0.5DS(on),max J Extreme dv/dt ratedQ 68 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO220 FP Ultra low gate chargeCoolMOS
ipa90r340c3.pdf
IPA90R340C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @ T = 25C 0.34DS(on),max J Extreme dv/dt ratedQ 94 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Worldwide best R in TO220 Fullpak PG-TO220 FP
ipa90r800c3.pdf
IPA90R800C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @ T = 25C 0.8DS(on),max J Extreme dv/dt ratedQ 42 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO220 FP Ultra low gate chargeCoolMOS
ipa90r500c3.pdf
isc N-Channel MOSFET Transistor IPA90R500C3, IIPA90R500C3FEATURES Drain-source on-resistance:RDS(on) 0.5@10VFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh fast switching Power SupplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source
ipa90r340c3.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA90R340C3FEATURESWith TO-220F PackageDrain Source Voltage-: V =900V(Min)DSSStatic Drain-Source On-Resistance: R = 0.34(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SWD80N04V
History: SWD80N04V
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918