Справочник MOSFET. IPB80P03P4L-07

 

IPB80P03P4L-07 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: IPB80P03P4L-07
   Маркировка: 4P03L07
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 88 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   Qg ⓘ - Общий заряд затвора: 63 nC
   tr ⓘ - Время нарастания: 4 ns
   Cossⓘ - Выходная емкость: 1220 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0069 Ohm
   Тип корпуса: TO263
 
   - подбор ⓘ MOSFET транзистора по параметрам

 

IPB80P03P4L-07 Datasheet (PDF)

 ..1. Size:168K  infineon
 ipb80p03p4l-07 ipi80p03p4l-07 ipp80p03p4l-07 ipp80p03p4l-07 ipb80p03p4l-07 ipi80p03p4l-07.pdf pdf_icon

IPB80P03P4L-07

IPB80P03P4L-07IPI80P03P4L-07, IPP80P03P4L-07OptiMOS-P2 Power-TransistorProduct SummaryV -30 VDSR (SMD Version) 6.9mDS(on) I -80 ADFeatures P-channel - Logic Level - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche

 1.1. Size:173K  infineon
 ipi80p03p4l-04 ipp80p03p4l-04 ipb80p03p4l-04.pdf pdf_icon

IPB80P03P4L-07

IPB80P03P4L-04IPI80P03P4L-04, IPP80P03P4L-04OptiMOS-P2 Power-TransistorProduct SummaryV -30 VDSR (SMD Version) 4.1mDS(on) I -80 ADFeatures P-channel - Logic Level - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche

 4.1. Size:169K  infineon
 ipb80p03p4-05 ipi80p03p4-05 ipp80p03p4-05 ipp80p03p4-05 ipb80p03p4-05 ipi80p03p4-05.pdf pdf_icon

IPB80P03P4L-07

IPB80P03P4-05IPI80P03P4-05, IPP80P03P4-05OptiMOS-P2 Power-TransistorProduct SummaryV -30 VDSR (SMD Version) 4.7mDS(on) I -80 ADFeatures P-channel - Normal Level - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche t

 7.1. Size:290K  infineon
 ipb80p04p4l-08 ipi80p04p4l-08 ipp80p04p4l-08.pdf pdf_icon

IPB80P03P4L-07

IPB80P04P4L-08IPI80P04P4L-08, IPP80P04P4L-08OptiMOS-P2 Power-TransistorProduct SummaryVDS -40 VRDS(on) (SMD Version) 7.9mWID -80 AFeatures P-channel - Logic Level - Enhancement mode AEC qualifiedPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche tested

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... IPB80N06S4-05 , IPB80N06S4-07 , IPB80N06S4L-05 , IPB80N06S4L-07 , IPB80N08S2-07 , IPB80N08S2L-07 , IPB80P03P4-05 , IPB80P03P4L-04 , 2SK3918 , IPB90N04S4-02 , IPB90N06S4-04 , IPB90N06S4L-04 , IPB009N03LG , IPB011N04LG , IPB011N04NG , IPB015N04LG , IPB015N04NG .

 

 
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