IPB80P03P4L-07 datasheet, аналоги, основные параметры
Наименование производителя: IPB80P03P4L-07 📄📄
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 88 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 16 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 4 ns
Cossⓘ - Выходная емкость: 1220 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0069 Ohm
Тип корпуса: TO263
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Аналог (замена) для IPB80P03P4L-07
- подборⓘ MOSFET транзистора по параметрам
IPB80P03P4L-07 даташит
ipb80p03p4l-07 ipi80p03p4l-07 ipp80p03p4l-07 ipp80p03p4l-07 ipb80p03p4l-07 ipi80p03p4l-07.pdf
IPB80P03P4L-07 IPI80P03P4L-07, IPP80P03P4L-07 OptiMOS -P2 Power-Transistor Product Summary V -30 V DS R (SMD Version) 6.9 m DS(on) I -80 A D Features P-channel - Logic Level - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche
ipi80p03p4l-04 ipp80p03p4l-04 ipb80p03p4l-04.pdf
IPB80P03P4L-04 IPI80P03P4L-04, IPP80P03P4L-04 OptiMOS -P2 Power-Transistor Product Summary V -30 V DS R (SMD Version) 4.1 m DS(on) I -80 A D Features P-channel - Logic Level - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche
ipb80p03p4-05 ipi80p03p4-05 ipp80p03p4-05 ipp80p03p4-05 ipb80p03p4-05 ipi80p03p4-05.pdf
IPB80P03P4-05 IPI80P03P4-05, IPP80P03P4-05 OptiMOS -P2 Power-Transistor Product Summary V -30 V DS R (SMD Version) 4.7 m DS(on) I -80 A D Features P-channel - Normal Level - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche t
ipb80p04p4l-08 ipi80p04p4l-08 ipp80p04p4l-08.pdf
IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 OptiMOS -P2 Power-Transistor Product Summary VDS -40 V RDS(on) (SMD Version) 7.9 mW ID -80 A Features P-channel - Logic Level - Enhancement mode AEC qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested
Другие IGBT... IPB80N06S4-05, IPB80N06S4-07, IPB80N06S4L-05, IPB80N06S4L-07, IPB80N08S2-07, IPB80N08S2L-07, IPB80P03P4-05, IPB80P03P4L-04, AO4407, IPB90N04S4-02, IPB90N06S4-04, IPB90N06S4L-04, IPB009N03LG, IPB011N04LG, IPB011N04NG, IPB015N04LG, IPB015N04NG
Параметры MOSFET. Взаимосвязь и компромиссы
History: IPB120N08S4-03 | JMSL10380U | BUZ103S-4
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