APT6015B2VR Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: APT6015B2VR
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 520 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 38 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 13 ns
Cossⓘ - Выходная емкость: 900 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.15 Ohm
Тип корпуса: TO247
Аналог (замена) для APT6015B2VR
APT6015B2VR Datasheet (PDF)
apt6015b2vr.pdf

APT6015B2VR600V 38A 0.150POWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Low
apt6015b2vfrg apt6015lvfrg.pdf

APT6015B2VFRAPT6015LVFR600V 38A 0.150B2VFR POWER MOS V FREDFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.
apt6015b2vfr.pdf

isc N-Channel MOSFET Transistor APT6015B2VFRFEATURESDrain Current I = 38A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.15(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu
apt6015lvfr.pdf

APT6015LVFR600V 38A 0.150WPOWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Teste
Другие MOSFET... APT5040CNR , APT50M50JVFR , APT50M50JVR , APT50M50PVR , APT50M60JN , APT50M85JVFR , APT50M85JVR , APT6013JVR , IRFB31N20D , APT6015JN , APT6015JVR , APT6015LVR , APT6017WVR , APT6020LVR , APT6025BVR , APT6027HVR , APT6030BN .
History: IRFU310 | IRF7828 | FRS9240D | IPS65R1K5CE | FCPF22N60NT | STF2458 | IRFI620A
History: IRFU310 | IRF7828 | FRS9240D | IPS65R1K5CE | FCPF22N60NT | STF2458 | IRFI620A



Список транзисторов
Обновления
MOSFET: JMTLA3134K | JMTLA2N7002KS | JMTL850P04A | JMTL400N04A | JMTL3N10A | JMTL3416KS | JMTL3415KL | JMTL3407A | JMTL3406A | JMTL3404B | JMTL3404A | JMTL3402A | JMTL3401B | JMTL3400L | JMTL3400A | JMTC80N06A
Popular searches
tip3055 transistor | irf530 datasheet | 2sc2625 | 2sc1815 transistor | 2sd718 | 2n3053 transistor | 2sc458 replacement | bc557 transistor