IPB037N06N3G - описание и поиск аналогов

 ..1. Size:484K  infineon
 ipb037n06n3g ipi040n06n3g ipp040n06n3g.pdf 

Type IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G OptiMOS 3 Power-Transistor Product Summary Features V 60 V DS R 3.7 for sync. rectification, drives and dc/dc SMPS m DS(on),max (SMD) I 90 A Excellent gate charge x R product (FOM) D DS(on) previous engineering Very low on-resistance R DS(on) sample codes N-channel, normal level IPP04xN06N IPI04xN06N Ava

 3.1. Size:258K  inchange semiconductor
 ipb037n06n3.pdf 

Isc N-Channel MOSFET Transistor IPB037N06N3 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

 9.1. Size:475K  infineon
 ipb034n06l3g ipi037n06l3g ipp037n06l3g.pdf 

Type IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G Product Summary OptiMOS 3 Power-Transistor V 60 V DS Features R 3.4 m DS(on),max (SMD) Ideal for high frequency switching and sync. rec. I 90 A D Optimized technology for DC/DC converters previous engineering Excellent gate charge x R product (FOM) DS(on) sample codes Very low on-resistance RDS(on) IPP04xN06

 9.2. Size:674K  infineon
 ipb034n06n3.pdf 

pe IPB034N06N3 G 3 Power-Transistor Product Summary Features V D P 6?A BH>3 A53C96931C9?> =?C?A 4A9E5B 1>4 43 43 ,&), R 4 m D n) m x P G35

 9.3. Size:696K  infineon
 ipb030n08n3.pdf 

IPB030N08N3 G 3 Power-Transistor Product Summary Features V D Q #4513I CG9D389>7 1>4 CI>3 B53 R m D n) m x Q ( @D9=9J54 D538>?C I 1 D Q H35

 9.4. Size:264K  infineon
 ipp039n04lg ipb039n04lg.pdf 

Type IPP039N04L G IPB039N04L G OptiMOS 3 Power-Transistor Product Summary Features V 40 V DS Fast switching MOSFET for SMPS R 3.9 m DS(on),max Optimized technology for DC/DC converters I 80 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on

 9.5. Size:1018K  infineon
 ipp037n08n3ge8181 ipp037n08n3g ipi037n08n3g ipb035n08n3g.pdf 

IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G 3 Power-Transistor Product Summary Features V D Q #4513I CG9D389>7 1>4 CI>3 B53 R m D n) m x Q ( @D9=9J54 D538>?F5BD5BC I 1 D Q H3579>55B9>7 3?45 Q .5BI B5C9CD1>35 + D n) #) ' ' ! Q ' 381>>5?B=1

 9.6. Size:1003K  infineon
 ipb033n10n5lf.pdf 

IPB033N10N5LF MOSFET D PAK OptiMOSTM 5 Linear FET, 100 V Features Ideal for hot-swap and e-fuse applications Very low on-resistance R DS(on) Wide safe operating area SOA N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21 Drain

 9.7. Size:508K  infineon
 ipb038n12n3-g ipi041n12n3-g ipp041n12n3-g.pdf 

IPI041N12N3 G IPP041N12N3 G IPB038N12N3 G OptiMOSTM3 Power-Transistor Product Summary Features V 120 V DS N-channel, normal level R 3.8 m DS(on),max (TO-263) Excellent gate charge x R product (FOM) DS(on) I 120 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant, halogen free Qualified according to

 9.8. Size:534K  infineon
 ipb031ne7n3 ipb031ne7n3g.pdf 

IPB031NE7N3 G TM 3 Power-Transistor Product Summary Features V 7 D Q ( @D9=9J54 D538>??EC B53D96931D9?> R 1 m D n) m x Q #4513I CG9D389>7 1>4 3?>F5BD5BC I 1 D Q H35

 9.9. Size:344K  infineon
 ipb039n04l-g ipp039n04l-g.pdf 

Type IPP039N04L G IPB039N04L G OptiMOS 3 Power-Transistor Product Summary Features V 40 V DS Fast switching MOSFET for SMPS R 3.9 m DS(on),max Optimized technology for DC/DC converters I 80 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on

 9.10. Size:664K  infineon
 ipb039n10n3ge8187.pdf 

IPB039N10N3 G 3 Power-Transistor Product Summary Features V 1 D P ' 381>>5?A=1

 9.11. Size:279K  infineon
 ipb03n03lbg.pdf 

IPB03N03LB OptiMOS 2 Power-Transistor Product Summary Features V 30 V DS Ideal for high-frequency dc/dc converters R 2.8 m DS(on),max Qualified according to JEDEC1) for target application I 80 A D N-channel - Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) PG-TO220-3-1 PG-TO263-3 Superior thermal resistan

 9.12. Size:633K  infineon
 ipb036n12n3g.pdf 

IPB036N12N3 G 3 Power-Transistor Product Summary Features V 1 D Q #4513I CG9D389>7 1>4 3?>F5BD5BC R m D n) m x Q H35

 9.13. Size:615K  infineon
 ipb039n04l .pdf 

pe %% # ! % # ! % (>.;?6?@ %>E Features 4 D S 4EF EI

 9.14. Size:1124K  infineon
 ipb031n08n5.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 80 V IPB031N08N5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 80 V IPB031N08N5 D PAK 1 Description Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R

 9.15. Size:725K  infineon
 ipp034n03lg ipb034n03lg.pdf 

Type IPP034N03L G IPB034N03L G 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 3.4 mW DS(on),max Optimized technology for DC/DC converters I 80 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on)

 9.16. Size:686K  infineon
 ipb039n04l.pdf 

Type IPP039N04L G IPB039N04L G 3 Power-Transistor Product Summary Features V 40 V DS Fast switching MOSFET for SMPS R 3.9 mW DS(on),max Optimized technology for DC/DC converters I 80 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on)

 9.17. Size:1096K  infineon
 ipb032n10n5.pdf 

IPB032N10N5 MOSFET D -PAK 7pin OptiMOS 5 Power-Transistor, 100 V Features Ideal for high frequency switching and sync. rec. tab Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) N-channel, normal level 1 100% avalanche tested Pb-free plating; RoHS compliant 7 Qualified according to JEDEC1) for target applications H

 9.18. Size:873K  infineon
 ipi041n12n3g ipp041n12n3g ipb038n12n3g.pdf 

IPI041N12N3 G IPP041N12N3 G IPB038N12N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 120 V N-channel, normal level RDS(on),max (TO-263) 3.8 mW Excellent gate charge x R product (FOM) DS(on) ID 120 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant, halogen free Qualified according to JE

 9.19. Size:494K  infineon
 ipp037n08n3g ipi037n08n3g ipb035n08n3g.pdf 

IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G OptiMOS 3 Power-Transistor Product Summary Features V 80 V DS Ideal for high frequency switching and sync. rec. R 3.5 m DS(on),max Optimized technology for DC/DC converters I 100 A D Excellent gate charge x R product (FOM) DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested

 9.20. Size:666K  infineon
 ipb039n10n3g ipb039n10n3g3.pdf 

IPB039N10N3 G 3 Power-Transistor Product Summary Features V 1 D P ' 381>>5?A=1

 9.21. Size:723K  infineon
 ipb034n03l ipp034n03l.pdf 

Type IPP034N03L G IPB034N03L G 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 3.4 mW DS(on),max Optimized technology for DC/DC converters I 80 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on)

 9.22. Size:258K  inchange semiconductor
 ipb033n10n5lf.pdf 

Isc N-Channel MOSFET Transistor IPB033N10N5LF FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

 9.23. Size:258K  inchange semiconductor
 ipb038n12n3g.pdf 

Isc N-Channel MOSFET Transistor IPB038N12N3G FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

 9.24. Size:228K  inchange semiconductor
 ipb035n08n3g.pdf 

Isc N-Channel MOSFET Transistor IPB035N08N3G FEATURES With TO-263( D PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )

 9.25. Size:243K  inchange semiconductor
 ipb034n03l .pdf 

isc N-Channel MOSFET Transistor IPB034N03L DESCRIPTION Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . Designed for high current, high speed switching, switch mode power supplies. ABSOLUTE MAXIMUM RATINGS(T =25 ) C SY

 9.26. Size:258K  inchange semiconductor
 ipb034n06l3g.pdf 

Isc N-Channel MOSFET Transistor IPB034N06L3G FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

 9.27. Size:258K  inchange semiconductor
 ipb031n08n5.pdf 

Isc N-Channel MOSFET Transistor IPB031N08N5 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

 9.28. Size:219K  inchange semiconductor
 ipb039n04l.pdf 

isc N-Channel MOSFET Transistor IPB039N04L FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 9.29. Size:243K  inchange semiconductor
 ipb034n03l.pdf 

isc N-Channel MOSFET Transistor IPB034N03L DESCRIPTION Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . Designed for high current, high speed switching, switch mode power supplies. ABSOLUTE MAXIMUM RATINGS(T =25 ) C SY

 9.30. Size:252K  inchange semiconductor
 ipb031ne7n3.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPB031NE7N3 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXI