# ! ! TM #:A0 4 m D n) m xQ #4513I CG9D389>7 1>4 3?>F5BD5BCDQ H35

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPB049NE7N3FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXI

pe IPB049N06L3 G IPP052N06L3 G 3 Power-TransistorProduct SummaryFeaturesV D R #562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?4 C64 R 4 7 m - @? >2I -' R ) AE:>:K65 E649?@=@8J 7@C 4@?G6CE6CDI DR I46==6?E 82E6 492C86 I R AC@5F4E ) ' D n)R ( 492??6= =@8:4 =6G6=R 2G2=2?496 E6DE65R *3 7C66 A=2E:?8 , @"- 4@>A=:2?E1)R + F2=:7:65 244@C5:?8 E@ $ 7@C E2C86E 2AA=:42E:

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS 5 Power-Transistor, 80 VIPB049N08N5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOS 5 Power-Transistor, 80 VIPB049N08N5DPAK1 DescriptionFeatures Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R pr

Isc N-Channel MOSFET Transistor IPB049N06L3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPB049N08N5FEATURESWith TO-263(D2PAK) packagingUltra-fast body diodeHigh speed switchingVery low on-resistenceEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a