IPB16CN10NG - описание и поиск аналогов

 ..1. Size:906K  infineon
 ipb16cn10ng ipd16cn10ng ipi16cn10ng ipp16cn10ng.pdf 

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 ..2. Size:258K  inchange semiconductor
 ipb16cn10ng.pdf 

Isc N-Channel MOSFET Transistor IPB16CN10NG FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

 4.1. Size:661K  infineon
 ipb16cn10n ipd16cn10n ipi16cn10n ipp16cn10n.pdf 

www.DataSheet4U.com IPB16CN10N G IPD16CN10N G IPI16CN10N G IPP16CN10N G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 16 m DS(on),max (TO252) Excellent gate charge x R product (FOM) DS(on) I 53 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified

 9.1. Size:122K  infineon
 ipb160n04s4-h1.pdf 

IPB160N04S4-H1 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 1.6 mW DS(on) I 160 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB160N04S4-H1 PG-TO263-7-3 4N04H1

 9.2. Size:162K  infineon
 ipb160n04s4-h1 ds 1 0.pdf 

IPB160N04S4-H1 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 1.6 m DS(on) I 160 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB160N04S4-H1 PG-TO263-7-3 4N04H1

 9.3. Size:145K  infineon
 ipb160n04s2-03.pdf 

IPB160N04S2-03 OptiMOS - T Power-Transistor Product Summary Features V 40 V DS N-channel - Enhancement mode R 2.9 m DS(on),max Automotive AEC Q101 qualified I 160 A D MSL1 up to 260 C peak reflow 175 C operating temperature Green package (lead free) PG-TO263-7-3 Ultra low Rds(on) 100% Avalanche tested Type Package Ordering Code Marking IPB1

 9.4. Size:192K  infineon
 ipb160n04s3-h2 ipb160n04s3-h2 ds 1 1.pdf 

IPB160N04S3-H2 OptiMOS -T Power-Transistor Product Summary V 40 V DS R 2.1 m DS(on) I 160 A D Features N-channel - Enhancement mode PG-TO263-7-3 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB160N04S3-H2 PG-T

 9.5. Size:152K  infineon
 ipb160n04s2l-03.pdf 

IPB160N04S2L-03 OptiMOS - T Power-Transistor Product Summary Features V 40 V DS N-channel Logic Level - Enhancement mode R 2.7 m DS(on),max Automotive AEC Q101 qualified I 160 A D MSL1 up to 260 C peak reflow 175 C operating temperature Green package (lead free) PG-TO263-7-3 Ultra low Rds(on) 100% Avalanche tested Type Package Ordering Code

 9.6. Size:200K  infineon
 ipb160n04s4l-h1.pdf 

Data Sheet IPB160N04S4L-H1 OptiMOSTM-T2 Power-Transistor Product Summary VDS 40 V RDS(on) 1.5 m ID 160 A Features N-channel Logic Level - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB160N04S4L-H1 PG-TO263-7-3 4N04LH1 Ma