Справочник MOSFET. IPB16CN10NG

 

IPB16CN10NG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPB16CN10NG
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 100 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 53 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 14 ns
   Cossⓘ - Выходная емкость: 364 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm
   Тип корпуса: TO263

 Аналог (замена) для IPB16CN10NG

 

 

IPB16CN10NG Datasheet (PDF)

 ..1. Size:906K  infineon
ipb16cn10ng ipd16cn10ng ipi16cn10ng ipp16cn10ng.pdf

IPB16CN10NG IPB16CN10NG

$ " " $ " " $ " " $$ " " $;B1= '=-:>5>?;=$=;0@/? &@99-=D 1 Features D 1 m S ) 5:3@@7> @AD?3> >7H7> . A@ ?3J /* S !J57>>7@F 93F7 5:3D97 J BDA6G5F "* ( DD n)S 07DK >AI A@ D7E;EF3@57 D n)S V AB7D3F;@9 F7?B7D3FGD7S +4 8D77 >736 B>3F;@9 - A$. 5A?B>;3@F1)S , G3>;8;76 355AD6;@9 FA &! ! 8AD F3D97F 3BB>;53F;A@S %673> 8AD :;9: 8D7CG7@5K EI;F5:;@9 3@6 EK@5:DA@AGE D7

 ..2. Size:258K  inchange semiconductor
ipb16cn10ng.pdf

IPB16CN10NG IPB16CN10NG

Isc N-Channel MOSFET Transistor IPB16CN10NGFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

 4.1. Size:661K  infineon
ipb16cn10n ipd16cn10n ipi16cn10n ipp16cn10n.pdf

IPB16CN10NG IPB16CN10NG

www.DataSheet4U.comIPB16CN10N G IPD16CN10N GIPI16CN10N G IPP16CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 16mDS(on),max (TO252) Excellent gate charge x R product (FOM)DS(on)I 53 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified

 9.1. Size:122K  infineon
ipb160n04s4-h1.pdf

IPB16CN10NG IPB16CN10NG

IPB160N04S4-H1OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 1.6mWDS(on)I 160 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB160N04S4-H1 PG-TO263-7-3 4N04H1

 9.2. Size:162K  infineon
ipb160n04s4-h1 ds 1 0.pdf

IPB16CN10NG IPB16CN10NG

IPB160N04S4-H1OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 1.6mDS(on)I 160 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB160N04S4-H1 PG-TO263-7-3 4N04H1

 9.3. Size:145K  infineon
ipb160n04s2-03.pdf

IPB16CN10NG IPB16CN10NG

IPB160N04S2-03OptiMOS - T Power-TransistorProduct SummaryFeaturesV 40 VDS N-channel - Enhancement modeR 2.9mDS(on),max Automotive AEC Q101 qualifiedI 160 AD MSL1 up to 260C peak reflow 175C operating temperature Green package (lead free)PG-TO263-7-3 Ultra low Rds(on) 100% Avalanche testedType Package Ordering Code MarkingIPB1

 9.4. Size:192K  infineon
ipb160n04s3-h2 ipb160n04s3-h2 ds 1 1.pdf

IPB16CN10NG IPB16CN10NG

IPB160N04S3-H2OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR 2.1mDS(on)I 160 ADFeatures N-channel - Enhancement modePG-TO263-7-3 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB160N04S3-H2 PG-T

 9.5. Size:152K  infineon
ipb160n04s2l-03.pdf

IPB16CN10NG IPB16CN10NG

IPB160N04S2L-03OptiMOS - T Power-TransistorProduct SummaryFeaturesV 40 VDS N-channel Logic Level - Enhancement modeR 2.7mDS(on),max Automotive AEC Q101 qualifiedI 160 AD MSL1 up to 260C peak reflow 175C operating temperature Green package (lead free)PG-TO263-7-3 Ultra low Rds(on) 100% Avalanche testedType Package Ordering Code

 9.6. Size:200K  infineon
ipb160n04s4l-h1.pdf

IPB16CN10NG IPB16CN10NG

Data Sheet IPB160N04S4L-H1OptiMOSTM-T2 Power-TransistorProduct SummaryVDS 40 VRDS(on) 1.5mID 160 AFeatures N-channel Logic Level - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPB160N04S4L-H1 PG-TO263-7-3 4N04LH1Ma

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