Справочник MOSFET. IPB60R099CP

 

IPB60R099CP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPB60R099CP
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 255 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 31 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 5 ns
   Cossⓘ - Выходная емкость: 130 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.099 Ohm
   Тип корпуса: TO263

 Аналог (замена) для IPB60R099CP

 

 

IPB60R099CP Datasheet (PDF)

 ..1. Size:588K  infineon
ipb60r099cp.pdf

IPB60R099CP
IPB60R099CP

IPB60R099CPCIMOSTM #:A0

 ..2. Size:258K  inchange semiconductor
ipb60r099cp.pdf

IPB60R099CP
IPB60R099CP

Isc N-Channel MOSFET Transistor IPB60R099CPFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

 0.1. Size:421K  infineon
ipb60r099cpa.pdf

IPB60R099CP
IPB60R099CP

IPB60R099CPACoolMOS Power TransistorProduct SummaryV 600 VDSR 0.105DS(on),maxQ 60 nCg,typFeatures Worldwide best Rds,on in TO263PG-TO263-3-2 Ultra low gate charge Extreme dv/dt rated High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant)CoolMOS CPA is specially designed for: DC/DC converters for A

 4.1. Size:1204K  infineon
ipb60r099c7.pdf

IPB60R099CP
IPB60R099CP

IPB60R099C7MOSFETDPAK600V CoolMOS C7 Power TransistorCoolMOS C7 is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.600V CoolMOS C7 series combines the experience of the leading SJMOSFET supplier with high class innovation.21The 600V C7 is the first technolo

 4.2. Size:1385K  infineon
ipb60r099c6.pdf

IPB60R099CP
IPB60R099CP

MOSFET+ =L9D - PA

 4.3. Size:2087K  infineon
ipa60r099c6 ipb60r099c6 ipp60r099c6 ipw60r099c6.pdf

IPB60R099CP
IPB60R099CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPx60R099C6 Data SheetRev. 2.1, 2010-02-09Final Industrial & Multimarket600V CoolMOS C6 Power Transistor IPA60R099C6, IPB60R099C6IPP60R099C6 IPW60R099C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the supe

 4.4. Size:258K  inchange semiconductor
ipb60r099c7.pdf

IPB60R099CP
IPB60R099CP

Isc N-Channel MOSFET Transistor IPB60R099C7FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

 4.5. Size:258K  inchange semiconductor
ipb60r099c6.pdf

IPB60R099CP
IPB60R099CP

Isc N-Channel MOSFET Transistor IPB60R099C6FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

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