Справочник MOSFET. IPB60R299CP

 

IPB60R299CP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPB60R299CP
   Маркировка: 6R299P
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 96 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 11 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 22 nC
   trⓘ - Время нарастания: 5 ns
   Cossⓘ - Выходная емкость: 60 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.299 Ohm
   Тип корпуса: TO263

 Аналог (замена) для IPB60R299CP

 

 

IPB60R299CP Datasheet (PDF)

 ..1. Size:554K  infineon
ipb60r299cp.pdf

IPB60R299CP IPB60R299CP

IPB60R299CPCIMOSTM #:A0:9 for industrial grade applications 688DG9>CC6CI; Halogen free mold compound ::7!"%

 ..2. Size:258K  inchange semiconductor
ipb60r299cp.pdf

IPB60R299CP IPB60R299CP

Isc N-Channel MOSFET Transistor IPB60R299CPFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

 0.1. Size:426K  infineon
ipb60r299cpa.pdf

IPB60R299CP IPB60R299CP

IPB60R299CPACoolMOSTM Power TransistorProduct SummaryV 600 VDSR 0.299DS(on),maxQ 22 nCg,typFeatures Lowest figure-of-merit Ron x QgPG-TO263-3 Ultra low gate charge Extreme dv/dt rated High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant)CoolMOS CPA is specially designed for: DC/DC converters for Aut

 7.1. Size:2632K  infineon
ipb60r230p6 ipw60r230p6 ipb60r230p6 ipp60r230p6 ipa60r230p6.pdf

IPB60R299CP IPB60R299CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R230P6Data SheetRev. 2.2FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R230P6, IPB60R230P6, IPP60R230P6,IPA60R230P6TO-247 DPAK TO-2201 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs,

 7.2. Size:529K  infineon
ipb60r250cp.pdf

IPB60R299CP IPB60R299CP

IPB60R250CPCIMOSTM #:A0:9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compound ::7!

 7.3. Size:1226K  infineon
ipb60r210cfd7.pdf

IPB60R299CP IPB60R299CP

IPB60R210CFD7MOSFETDPAK600V CoolMOS CFD7 Power TransistorCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications s

 7.4. Size:3109K  infineon
ipw60r230p6 ipb60r230p6 ipp60r230p6 ipa60r230p6.pdf

IPB60R299CP IPB60R299CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R230P6Data SheetRev. 2.2FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R230P6, IPB60R230P6, IPP60R230P6,IPA60R230P6TO-247 DPAK TO-2201 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs,

 7.5. Size:1120K  infineon
ipb60r280p7.pdf

IPB60R299CP IPB60R299CP

IPB60R280P7MOSFETDPAK600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology fortabhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOS

 7.6. Size:1432K  infineon
ipb60r280c6.pdf

IPB60R299CP IPB60R299CP

MOSFET+ =L9D - PA

 7.7. Size:2608K  infineon
ipb60r280p6.pdf

IPB60R299CP IPB60R299CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R280P6Data SheetRev. 2.2FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R280P6, IPB60R280P6, IPP60R280P6,IPA60R280P6TO-247 DPAK TO-2201 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs,

 7.8. Size:2621K  infineon
ipw60r280p6 ipb60r280p6 ipp60r280p6 ipa60r280p6.pdf

IPB60R299CP IPB60R299CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R280P6Data SheetRev. 2.2FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R280P6, IPB60R280P6, IPP60R280P6,IPA60R280P6TO-247 DPAK TO-2201 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs,

 7.9. Size:1587K  infineon
ipa60r280c6 ipb60r280c6 ipi60r280c6 ipp60r280c6 ipw60r280c6.pdf

IPB60R299CP IPB60R299CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R280C6Data SheetRev. 2.2FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPA60R280C6, IPB60R280C6IPI60R280C6, IPP60R280C6IPW60R280C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according

 7.10. Size:258K  inchange semiconductor
ipb60r250cp.pdf

IPB60R299CP IPB60R299CP

Isc N-Channel MOSFET Transistor IPB60R250CPFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

 7.11. Size:258K  inchange semiconductor
ipb60r230p6.pdf

IPB60R299CP IPB60R299CP

Isc N-Channel MOSFET Transistor IPB60R230P6FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

 7.12. Size:258K  inchange semiconductor
ipb60r280p7.pdf

IPB60R299CP IPB60R299CP

Isc N-Channel MOSFET Transistor IPB60R280P7FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

 7.13. Size:258K  inchange semiconductor
ipb60r280c6.pdf

IPB60R299CP IPB60R299CP

Isc N-Channel MOSFET Transistor IPB60R280C6FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

 7.14. Size:205K  inchange semiconductor
ipb60r280p6.pdf

IPB60R299CP IPB60R299CP

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPB60R280P6FEATURESWith TO-263(D2PAK) packagingUltra-fast body diodeHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

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