IPD50N06S2-14 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IPD50N06S2-14
Маркировка: PN0614
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 136 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 50 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 39 nC
trⓘ - Время нарастания: 29 ns
Cossⓘ - Выходная емкость: 464 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0144 Ohm
Тип корпуса: TO252
Аналог (замена) для IPD50N06S2-14
IPD50N06S2-14 Datasheet (PDF)
ipd50n06s2-14 ipd50n06s2-14 ds 1 1.pdf
IPD50N06S2-14 Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 14.4mDS(on),max Automotive AEC Q101 qualifiedI 50 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPD50N06S2-14
ipd50n06s2-14.pdf
IPD50N06S2-14www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 50 Material categorization:600.013 at VGS = 4.5 V 45DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Li
ipd50n06s2l-13.pdf
IPD50N06S2L-13OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 12.7mDS(on),max Automotive AEC Q101 qualifiedI 50 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package Mark
ipd50n06s2l-13.pdf
IPD50N06S2L-13OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 12.7mDS(on),max Automotive AEC Q101 qualifiedI 50 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package Mark
ipd50n06s4l-08 ipd50n06s4l-08 ds 10.pdf
IPD50N06S4L-08OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 7.8mDS(on),maxI 50 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD50N06S4L-08 PG-TO252-3-11 4N06L08Maximum ra
ipd50n06s4-09 ipd50n06s4-09 ds 12.pdf
IPD50N06S4-09OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 9.0mDS(on),maxI 50 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD50N06S4-09 PG-TO252-3-11 4N0609Maximum ratings, a
ipd50n06s4l-12 ipd50n06s4l-12 ds 10.pdf
IPD50N06S4L-12OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 12mDS(on),maxI 50 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD50N06S4L-12 PG-TO252-3-11 4N06L12Maximum rat
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918