IPD80N04S3-06 - описание и поиск аналогов

 ..1. Size:184K  infineon
 ipd80n04s3-06 ipd80n04s3-06 ds 1 0.pdf 

IPD80N04S3-06 OptiMOS -T Power-Transistor Product Summary V 40 V DS R 5.2 m DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package Marking IPD80N04S3-06 PG-TO252-3-11 QN0406 Max

 ..2. Size:292K  inchange semiconductor
 ipd80n04s3-06.pdf 

isc N-Channel MOSFET Transistor IPD80N04S3-06 FEATURES Drain Current I = 90A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R 5.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra Low On-resistance Fast Switching ABSOLUTE MAX

 9.1. Size:948K  infineon
 ipd80r750p7.pdf 

IPD80R750P7 MOSFET DPAK 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V tab super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features 2 1 Best-in-class FOM R * E ; reduced Q , C , and

 9.2. Size:2292K  infineon
 ipd80r1k4ce ipu80r1k4ce.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 800V CoolMOS CE Power Transistor IPx80R1K4CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 800V CoolMOS CE Power Transistor IPD80R1K4CE, IPU80R1K4CE DPAK IPAK 1 Description tab tab CoolMOS CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combine

 9.3. Size:975K  infineon
 ipd80r4k5p7.pdf 

IPD80R4K5P7 MOSFET DPAK 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V tab super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features 2 1 Best-in-class FOM R * E ; reduced Q , C , and

 9.4. Size:165K  infineon
 ipd80p03p4l-07 ds 10.pdf 

IPD80P03P4L-07 OptiMOS -P2 Power-Transistor Product Summary V -30 V DS R 6.8 m DS(on) I -80 A D Features P-channel - Logic Level - Enhancement mode PG-TO252-3-11 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested Intended for reverse battery protection Type Package Mar

 9.5. Size:2275K  infineon
 ipd80r2k8ce ipu80r2k8ce.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 800V CoolMOS CE Power Transistor IPx80R2K8CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 800V CoolMOS CE Power Transistor IPD80R2K8CE, IPU80R2K8CE DPAK IPAK 1 Description tab tab CoolMOS CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combine

 9.6. Size:971K  infineon
 ipd80r1k4p7.pdf 

IPD80R1K4P7 MOSFET DPAK 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V tab super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features 2 1 Best-in-class FOM R * E ; reduced Q , C , and

 9.7. Size:960K  infineon
 ipd80r2k4p7.pdf 

IPD80R2K4P7 MOSFET DPAK 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V tab super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features 2 1 Best-in-class FOM R * E ; reduced Q , C , and

 9.8. Size:964K  infineon
 ipd80r2k0p7.pdf 

IPD80R2K0P7 MOSFET DPAK 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V tab super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features 2 1 Best-in-class FOM R * E ; reduced Q , C , and

 9.9. Size:961K  infineon
 ipd80r900p7.pdf 

IPD80R900P7 MOSFET DPAK 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V tab super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features 2 1 Best-in-class FOM R * E ; reduced Q , C , and

 9.10. Size:992K  infineon
 ipd800n06n g.pdf 

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 9.11. Size:970K  infineon
 ipd80r3k3p7.pdf 

IPD80R3K3P7 MOSFET DPAK 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V tab super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features 2 1 Best-in-class FOM R * E ; reduced Q , C , and

 9.12. Size:972K  infineon
 ipd80r360p7.pdf 

IPD80R360P7 MOSFET DPAK 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V tab super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features 2 1 Best-in-class FOM R * E ; reduced Q , C , and

 9.13. Size:1147K  infineon
 ipd80r450p7.pdf 

IPD80R450P7 MOSFET DPAK 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V tab super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features 2 1 Best-in-class FOM R * E ; reduced Q , C , and

 9.14. Size:510K  infineon
 ipd80r2k7c3a.pdf 

Data Sheet IPD80R2k7C3A CoolMOSTM Power Transistor Product Summary Features VDS 800 V New revolutionary high voltage technology RDS(on)max @ Tj = 25 C 2.7 W Extreme dv/dt rated Qg,typ 12 nC High peak current capability Qualified according to AEC Q101 Green package (RoHS compliant), Pb-free lead plating, halogen free for mold compound PG-TO252-3 Ultra

 9.15. Size:953K  infineon
 ipd80r280p7.pdf 

IPD80R280P7 MOSFET DPAK 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V tab super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features 2 1 Best-in-class FOM R * E ; reduced Q , C , and

 9.16. Size:957K  infineon
 ipd80r600p7.pdf 

IPD80R600P7 MOSFET DPAK 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V tab super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features 2 1 Best-in-class FOM R * E ; reduced Q , C , and

 9.17. Size:2278K  infineon
 ipd80r1k0ce ipu80r1k0ce.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 800V CoolMOS CE Power Transistor IPx80R1K0CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 800V CoolMOS CE Power Transistor IPD80R1K0CE, IPU80R1K0CE DPAK IPAK 1 Description tab tab CoolMOS CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combine

 9.18. Size:243K  inchange semiconductor
 ipd80r2k8ce.pdf 

isc N-Channel MOSFET Transistor IPD80R2K8CE,IIPD80R2K8CE FEATURES Static drain-source on-resistance RDS(on) 2.8 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage

 9.19. Size:309K  inchange semiconductor
 ipd80p03p4l-07.pdf 

isc P-Channel MOSFET Transistor IPD80P03P4L-07 FEATURES Drain Current I = -80A@ T =25 D C Drain Source Voltage V = -30V(Min) DSS Static Drain-Source On-Resistance R = 6.8m (Max) @V = -10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and

 9.20. Size:243K  inchange semiconductor
 ipd80r1k0ce.pdf 

isc N-Channel MOSFET Transistor IPD80R1K0CE,IIPD80R1K0CE FEATURES Static drain-source on-resistance RDS(on) 0.95 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltag